MASW8000 [TE]
GaAs SPDT Switch DC - 8 GHz; 砷化镓SPDT开关DC - 8 GHz的
| 型号： | MASW8000 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaAs SPDT Switch DC - 8 GHz |
| 文件： | 总2页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs SPDT Switch
DC - 8 GHz
MASW8000
V 2.00
Features
● Low Insertion Loss, 0.8 dB Typical @ 8 GHz
● Fast Switching Speed, 3 ns Typical
● Flexible Bonding Configurations
**
***
Guaranteed Specifications @+25°C
Frequency Range
DC-8.0 GHz
Insertion Loss
DC-2.0 GHz
DC-4.0 GHz
DC-8.0 GHz
0.8 dB Max
0.9 dB Max
1.0 dB Max
Typical Performance
VSWR
DC-2.0 GHz
DC-4.0 GHz
DC-8.0 GHz
1.3:1 Max
1.4:1 Max
1.5:1 Max
Isolation
DC-2.0 GHz
DC-4.0 GHz
DC-8.0 GHz
37 dB Min
30 dB Min
20 dB Min
Operating Characteristics
Impedance
50 WNominal
Switching Characteristics
T
T
T
(10/90% or 90/10% RF)
(50% CTL to 90/10% RF)
2 ns Typ
4 ns Typ
20 mV Typ
rise, fall
T
on, off
Transients (in-Band)
Input Power for 1 dB Compression
Control Voltages (Vdc)
0/-5
0/-8
0.05 GHz
0.5-8 GHz
+20 dBm
+27 dBm
+22 dBm Typ
+30 dBm Typ
Intermodulation Intercept point
(for two-tone input power up to +5 dBm)
Intercept Points
IP
IP
3
2
0.05 GHz
0.5-8 GHz
+53 dBm
+78 dBm
+40 dBm Typ
+52 dBm Typ
Control Voltages (Complimentary Logic)
V
V
Low
Hi
0 to -0.2V @ 20 µA Max
-5V @ 50 µA Typ to -8V @ 350 µA Max
in
in
Schematic
Die Size
0.046” x 0.036” X 0.010”
(1.15mm X 0.90mm X 0.25mm)
** All specifications apply with 50 Wimpedance connected to all RF ports,
0 and -5 Vdc control voltages.
*** Loss change 0.0025 dB/°C. (From -55°C to +85°C)
V 2.00
TruthTable****
Handling Precautions
Permanent damage to the MASW8000 may occur if the fol-
lowing precautions are not adhered to:
Control Inputs
Condition Of Switch
A1/B2
A2/B1
RF1
RF2
A. Cleanliness — The MASW8000 should be handled in a
clean environment. DO NOT attempt to clean unit after
the MASW8000 is installed.
IN
IN
V Hi
V Low
On
Off
Off
On
IN
IN
V Low
V Hi
B. Static Sensitivity — All chip handling equipment and per-
sonnel should be DC grounded.
****For normal SPDT operation A1 is connected to B2 and
A2 is connected to B1.
C. Transient — Avoid instrument and power supply transients
while bias is applied to the MASW8000. Use shielded
signal and bias cables to minimize inductive pick-up.
Maximum Ratings
D. Bias —Apply voltage to either of the complementary con-
trol port A1/B2 or A2/B1 only when the other is grounded.
Neither port should be allowed to ”float”.
A. Control Voltage (A1/B2 or A2/B1):–8.5 Vdc
B. Max Input RF Power:
+34 dBm
E.General Handling — It is recommended that the
MASW8000 chip be handled along the long side of the
die with a sharp pair of bent tweezers. DO NOT touch the
surface of the chip with fingers or tweezers.
C. Storage Temperature:
D. Max Operating Temperature:
–65°C to +175°C
+175°C
Mounting
The MASW8000 is back-metallized with Pd/Ni/Au
(100/1,000/10,000Å) metallization. It can be die-mounted
with AuSn eutectic preforms or with thermally conductive
epoxy. The package surface should be clean and flat before
attachment.
BondPad Dimensions
Inches (mm)
RF:
0.004 x 0.004
(0.100 x 0.100)
Eutectic Die Attach:
RF1, RF2:
0.004 x 0.004
(0.100 x 0.100)
A. A 80/20 gold/tin preform is recommended with a work
surface temperature of approximately 255°C and a tool
temperature of 265°C. When hot 90/10 nitrogen/hydrogen
gas is applied, tool tip temperature should be approxi-
mately 290°C.
A1, A2, B1, B2:
PC1, PC2
0.004 x 0.004
(0.100 x 0.100)
B. DO NOT expose the MASW8000 to a temperature
greater than 320°C for more than 20 seconds. No more
than 30 seconds of scrubbing should be required for
attachment.
0.004 x 0.004
(0.100 x 0.100)
Epoxy Die Attach:
GND1, GND2:
0.005 x 0.009
A. Apply a minimum amount of epoxy and place the
MASW8000 into position. A thin epoxy fillet should be
visible around the perimeter of the chip.
(0.110 x 0.225)
B. Cure epoxy per manufacturer’s recommended schedule.
Die Size
Inches (mm)
C. Electrically conductive epoxy may be used but is not
required.
0.046 x 0.036 x 0.010
(1.15 x 0.90 x 0.25)
Wire Bonding
A. Ball or wedge bond with 1.0 mil diameter pure gold wire.
Thermosonic wirebonding with a nominal stage tempera-
ture of 150°C and a ball bonding force of 40 to 50 grams
or wedge bonding force of 18 to 22 grams is recommend-
ed.Ultrasonic energy and time should be adjusted to the
minimum levels to achieve reliable wirebonds.
B. Wirebonds should be started on the chip and terminat-
ed on the package. GND bonds should be as short as
possible; at least three and no more than four bond
wires or two 3-mil ribbons from ground pads to package
are recommended.
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