MASWSS0020 [TE]
GaAs SP4T 2.5V High Power Switch DC - 3 GHz; 砷化镓SP4T 2.5V大功率开关DC - 3 GHz的型号: | MASWSS0020 |
厂家: | TE CONNECTIVITY |
描述: | GaAs SP4T 2.5V High Power Switch DC - 3 GHz |
文件: | 总5页 (文件大小:262K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GaAs SP4T 2.5V High Power Switch
Jan 16 2002
DC - 3 GHz
Preliminary
Features
Functional Schematic
•
•
•
•
•
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Low Voltage Operation 2.5V
Low Harmonics > 65 dBc at +34 dBm & 1 GHz
Low Insertion Loss 0.6 dB at 1 GHz
High Isolation 23 dB at 2 GHz
Miniature FQFP 16-lead 4x4mm Package
0.5 micron GaAs pHEMT Process
PIN 16
PIN 1
RF4
V1
RF1
39 pF
GND
Description
39 pF
GND
RF2
GND
RF3
M/A-COM’s MASWSS0020 is a GaAs PHEMT MMIC
single pole four throw (SP4T) high power switch in a low
cost miniature FQFP 16-lead 4x4mm package. The
MASWSS0020 is ideally suited for applications where high
power, low control voltage, low insertion loss, high isola-
tion, small size and low cost are required. Typical applica-
tions are for GSM and DCS handset systems that connect
separate transmit and receive functions to a common an-
tenna, as well as other handset and related applications.
This part can be used in all systems operating up to 3 GHz
requiring high power at low control voltage.
39 pF
39 pF
Pin Configuration
The MASWSS0020 is fabricated using a 0.5 micron gate
length GaAs PHEMT process. The process features full
passivation for performance and reliability.
PIN
PIN Name
Description
No.
1
2
V1
RF1
Control 1
RF Port 1
RF Ground
RF Port 2
RF Ground
Control 2
Absolute Maximum Ratings 1
3
GND
RF2
4
Parameter
Absolute
Maximum
5
GND
V2
6
Max Input Power (0.5 - 3 GHz,
2.5V Control)
+38 dBm
7
V3
Control 3
Operating Voltage
+8.5 volts
-40 oC to +85 oC
-65 oC to +150 oC
8
GND
RF3
RF Ground
RF Port 3
RF Ground
RF Ground
RF Port 4
RF Ground
Control 4
Operating Temperature
9
Storage Temperature
10
11
12
13
14
15
16
17
GND
GND
RF4
1. Exceeding any one or combination of these limits may
cause permanent damage.
GND
V4
GND
ANT
RF Ground
Antenna Port
RF Ground
GND (paddle)
GaAs SP4T 2.5V High Power Switch
MASWSS0020
V 1.00
Electrical Specifications: TA = 25°C, Z0 = 50Ω 2
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
DC – 1 GHz
1 – 2 GHz
2 - 3 GHz
dB
dB
dB
0.6
0.8
1.0
0.8
1.0
Isolation
DC – 1 GHz
1 – 2 GHz
2 - 3 GHz
dB
dB
dB
25
21
29
23
18.5
Return Loss
IP3
DC – 3 GHz
dB
20
Two Tone +10dBm, 5 MHz Spacing, > 50 MHz
Vc = 0V/2.5V
dBm
57
P1dB
Vc = 0V/2.5V
1 GHz, PIN = +34 dBm, Vc = 0V/2.5V
1 GHz, PIN = +34 dBm, Vc = 0V/2.5V
50% control to 90% RF, and 50% control to 10% RF
50 - 350 MHz
dBm
dBc
dBc
38
2nd Harmonic
3rd Harmonic
Trise, Tfall
Ton, Toff
65
65
1
1
uS
uS
Transients
Gate Leakage
mV
uA
10
|Vc| = 2.5V
100
2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 39 pF for
0.5 GHz - 3 GHz.
Truth Table 3
V1
V2
V3
V4
ANT– RF1
ANT - RF2
ANT - RF3
ANT - RF4
+2.5 to +5V
0 + 0.2V
0 + 0.2V
0 + 0.2V
0 + 0.2V
+2.5 to +5V
0 + 0.2V
0 + 0.2V
0 + 0.2V
0 + 0.2V
0 + 0.2V
On
Off
Off
Off
Off
On
Off
Off
Off
Off
On
Off
Off
Off
Off
On
+2.5 to +5V
0 + 0.2V
0 + 0.2V
0 + 0.2V
+2.5 to +5V
3. External DC blocking capacitors are required on all RF ports
2
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
GaAs SP4T 2.5V High Power Switch
Typical Performance Curves
MASWSS0020
V 1.00
Insertion Loss vs. Frequency,
25 oC, 39 pF
Isolation vs. Frequency,
25 oC, 39 pF
-15
-20
-25
-30
-35
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0.5
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Frequency (GHz)
Harmonic Rejection vs. Control Voltage,
25 oC, 39 pF
-60
Pin = +34 dBm @ 1 GHz
-65
-70
3rd Harmonic
-75
2nd Harmonic
-80
-85
2.2
2.4
2.6
2.8
3
Control Voltage (V)
3
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
GaAs SP4T 2.5V High Power Switch
FQFP 16-lead 4x4 mm
MASWSS0020
V 1.00
4
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
GaAs SP4T 2.5V High Power Switch
Handling Procedures
MASWSS0020
V 1.00
The following precautions should be observed to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are ESD sensitive
and can be damaged by static electricity. Proper ESD
techniques should be used when handling these devices.
Ordering Information
Part Number
Package
MASWSS0020
FQFP-N 16-lead Plastic Package
MASWSS0020TR
1000 piece reel
MASWSS0020SMB
Sample Test Board
5
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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