MASWSS0020 [TE]

GaAs SP4T 2.5V High Power Switch DC - 3 GHz; 砷化镓SP4T 2.5V大功率开关DC - 3 GHz的
MASWSS0020
型号: MASWSS0020
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

GaAs SP4T 2.5V High Power Switch DC - 3 GHz
砷化镓SP4T 2.5V大功率开关DC - 3 GHz的

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GaAs SP4T 2.5V High Power Switch  
Jan 16 2002  
DC - 3 GHz  
Preliminary  
Features  
Functional Schematic  
Low Voltage Operation 2.5V  
Low Harmonics > 65 dBc at +34 dBm & 1 GHz  
Low Insertion Loss 0.6 dB at 1 GHz  
High Isolation 23 dB at 2 GHz  
Miniature FQFP 16-lead 4x4mm Package  
0.5 micron GaAs pHEMT Process  
PIN 16  
PIN 1  
RF4  
V1  
RF1  
39 pF  
GND  
Description  
39 pF  
GND  
RF2  
GND  
RF3  
M/A-COM’s MASWSS0020 is a GaAs PHEMT MMIC  
single pole four throw (SP4T) high power switch in a low  
cost miniature FQFP 16-lead 4x4mm package. The  
MASWSS0020 is ideally suited for applications where high  
power, low control voltage, low insertion loss, high isola-  
tion, small size and low cost are required. Typical applica-  
tions are for GSM and DCS handset systems that connect  
separate transmit and receive functions to a common an-  
tenna, as well as other handset and related applications.  
This part can be used in all systems operating up to 3 GHz  
requiring high power at low control voltage.  
39 pF  
39 pF  
Pin Configuration  
The MASWSS0020 is fabricated using a 0.5 micron gate  
length GaAs PHEMT process. The process features full  
passivation for performance and reliability.  
PIN  
PIN Name  
Description  
No.  
1
2
V1  
RF1  
Control 1  
RF Port 1  
RF Ground  
RF Port 2  
RF Ground  
Control 2  
Absolute Maximum Ratings 1  
3
GND  
RF2  
4
Parameter  
Absolute  
Maximum  
5
GND  
V2  
6
Max Input Power (0.5 - 3 GHz,  
2.5V Control)  
+38 dBm  
7
V3  
Control 3  
Operating Voltage  
+8.5 volts  
-40 oC to +85 oC  
-65 oC to +150 oC  
8
GND  
RF3  
RF Ground  
RF Port 3  
RF Ground  
RF Ground  
RF Port 4  
RF Ground  
Control 4  
Operating Temperature  
9
Storage Temperature  
10  
11  
12  
13  
14  
15  
16  
17  
GND  
GND  
RF4  
1. Exceeding any one or combination of these limits may  
cause permanent damage.  
GND  
V4  
GND  
ANT  
RF Ground  
Antenna Port  
RF Ground  
GND (paddle)  
GaAs SP4T 2.5V High Power Switch  
MASWSS0020  
V 1.00  
Electrical Specifications: TA = 25°C, Z0 = 502  
Parameter  
Test Conditions  
Units  
Min.  
Typ.  
Max.  
Insertion Loss  
DC – 1 GHz  
1 – 2 GHz  
2 - 3 GHz  
dB  
dB  
dB  
0.6  
0.8  
1.0  
0.8  
1.0  
Isolation  
DC – 1 GHz  
1 – 2 GHz  
2 - 3 GHz  
dB  
dB  
dB  
25  
21  
29  
23  
18.5  
Return Loss  
IP3  
DC – 3 GHz  
dB  
20  
Two Tone +10dBm, 5 MHz Spacing, > 50 MHz  
Vc = 0V/2.5V  
dBm  
57  
P1dB  
Vc = 0V/2.5V  
1 GHz, PIN = +34 dBm, Vc = 0V/2.5V  
1 GHz, PIN = +34 dBm, Vc = 0V/2.5V  
50% control to 90% RF, and 50% control to 10% RF  
50 - 350 MHz  
dBm  
dBc  
dBc  
38  
2nd Harmonic  
3rd Harmonic  
Trise, Tfall  
Ton, Toff  
65  
65  
1
1
uS  
uS  
Transients  
Gate Leakage  
mV  
uA  
10  
|Vc| = 2.5V  
100  
2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 39 pF for  
0.5 GHz - 3 GHz.  
Truth Table 3  
V1  
V2  
V3  
V4  
ANT– RF1  
ANT - RF2  
ANT - RF3  
ANT - RF4  
+2.5 to +5V  
0 + 0.2V  
0 + 0.2V  
0 + 0.2V  
0 + 0.2V  
+2.5 to +5V  
0 + 0.2V  
0 + 0.2V  
0 + 0.2V  
0 + 0.2V  
0 + 0.2V  
On  
Off  
Off  
Off  
Off  
On  
Off  
Off  
Off  
Off  
On  
Off  
Off  
Off  
Off  
On  
+2.5 to +5V  
0 + 0.2V  
0 + 0.2V  
0 + 0.2V  
+2.5 to +5V  
3. External DC blocking capacitors are required on all RF ports  
2
Specifications subject to change without notice.  
„ North America: Tel. (800) 366-2266, Fax (800) 618-8883  
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
„ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
Visit www.macom.com for additional data sheets and product information.  
GaAs SP4T 2.5V High Power Switch  
Typical Performance Curves  
MASWSS0020  
V 1.00  
Insertion Loss vs. Frequency,  
25 oC, 39 pF  
Isolation vs. Frequency,  
25 oC, 39 pF  
-15  
-20  
-25  
-30  
-35  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
-1  
0.5  
1
1.5  
2
2.5  
3
0.5  
1
1.5  
2
2.5  
3
Frequency (GHz)  
Frequency (GHz)  
Harmonic Rejection vs. Control Voltage,  
25 oC, 39 pF  
-60  
Pin = +34 dBm @ 1 GHz  
-65  
-70  
3rd Harmonic  
-75  
2nd Harmonic  
-80  
-85  
2.2  
2.4  
2.6  
2.8  
3
Control Voltage (V)  
3
Specifications subject to change without notice.  
„ North America: Tel. (800) 366-2266, Fax (800) 618-8883  
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
„ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
Visit www.macom.com for additional data sheets and product information.  
GaAs SP4T 2.5V High Power Switch  
FQFP 16-lead 4x4 mm  
MASWSS0020  
V 1.00  
4
Specifications subject to change without notice.  
„ North America: Tel. (800) 366-2266, Fax (800) 618-8883  
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
„ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
Visit www.macom.com for additional data sheets and product information.  
GaAs SP4T 2.5V High Power Switch  
Handling Procedures  
MASWSS0020  
V 1.00  
The following precautions should be observed to avoid  
damage:  
Static Sensitivity  
Gallium Arsenide Integrated Circuits are ESD sensitive  
and can be damaged by static electricity. Proper ESD  
techniques should be used when handling these devices.  
Ordering Information  
Part Number  
Package  
MASWSS0020  
FQFP-N 16-lead Plastic Package  
MASWSS0020TR  
1000 piece reel  
MASWSS0020SMB  
Sample Test Board  
5
Specifications subject to change without notice.  
„ North America: Tel. (800) 366-2266, Fax (800) 618-8883  
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
„ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
Visit www.macom.com for additional data sheets and product information.  

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