MASWSS0033SMB [TE]
GaAs SP3T 2.5V High Power Switch DC - 2.5 GHz; 砷化镓SP3T 2.5V大功率开关DC - 2.5 GHz的
| 型号： | MASWSS0033SMB |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaAs SP3T 2.5V High Power Switch DC - 2.5 GHz |
| 文件： | 总5页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs SP3T 2.5V High Power Switch
Feb 12 2002
DC - 2.5 GHz
Preliminary
Features
Functional Schematic
• Low Harmonic Knee Voltage < 2.5V
• Low Harmonics > 65 dBc at +34 dBm & 1 GHz
• Low Insertion Loss 0.45 dB at 1 GHz
• High Isolation 18.5 dB at 2 GHz
PIN 1
V3
• FQFP 12-lead 3x3mm Low Profile Package
• 0.5 micron GaAs pHEMT Process
V1
RF3
RF1
Description
100 pF
100 pF
M/A-COM’s MASWSS0033 is a GaAs PHEMT MMIC
SP3T high power switch in a low cost miniature FQFP
12-lead 3x3mm thin profile package. This package
represents a lower profile than standard FQFP style,
featuring a 0.8mm maximum thickness.
GND
GND
The MASWSS0033 is ideally suited for applications
where high power, low control voltage, low insertion
loss, high isolation, small size and low cost are re-
quired. Typical applications are for GSM and DCS
handset systems that connect separate transmit and
receive functions to a common antenna, as well othe
handset and related applications. This part can be
used in all systems operating up to 2.5 GHz requiring
high power at low control voltage.
Pin Configuration
PIN
PIN Name
Description
No.
1
2
V3
RF3
Control 3
RF Port 3
The MASWSS0033 is fabricated using a 0.5 micron
gate length GaAs PHEMT process. The process fea-
tures full passivation for performance and reliability.
3
GND
GND
RF2
RF Ground
RF Ground
RF Port 2
4
5
Absolute Maximum Ratings 1
6
V2
Control 2
7
GND
RF1
RF Ground
RF Port 1
Parameter
Absolute
Maximum
8
Max Input Power (0.5 - 2.5 GHz,
2.5V Control)
+38 dBm
9
V1
Control 1
10
11
12
13
GND
ANT
RF Ground
Antenna Port
RF Ground
RF Ground
Operating Voltage
Operating Temperature
Storage Temperature
+8.5 volts
-40 oC to +85 oC
-65 oC to +150 oC
GND
GND (paddle)
1. Exceeding any one or combination of these limits may
cause permanent damage.
GaAs SP3T 2.5V High Power Switch
MASWSS0033
V 1.04
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
DC – 1 GHz
1 – 2 GHz
dB
dB
dB
0.5
0.6
0.8
0.65
0.8
2 - 2.5 GHz
1.0
Isolation
DC – 1 GHz
1 – 2 GHz
dB
dB
dB
23
18
15
25
18.5
16
2 - 2.5 GHz
Return Loss
P1dB
DC – 2.5 GHz
dB
dBm
dBc
dBc
µS
20
Vc = 0V/2.5V
38
2nd Harmonic
3rd Harmonic
Trise, Tfall
1 GHz, PIN = +34 dBm, Vc = 0V/2.5V
1 GHz, PIN = +34 dBm, Vc = 0V/2.5V
10% to 90% RF, 90% to 10% RF
65
65
1
Cross Modulation
ANT - CELL3
Two Tone +22 dBm, 1 MHz Spacing, 820 MHz,
Two Tone +19 dBm, 1 MHz Spacing, 1950 MHz,
dBm
dBm
59
57
ANT - PCS3
Cross Modulation
ANT - CELL
Two Tones +22 dBm @ 820 & 821 MHz,
One Tone –27 dBm @ 865 MHz
dBm
dBm
-108
TBD
ANT - PCS
Two Tones +17 dBm @ 1950 & 1951 MHz,
One Tone –27 dBm @ 1870 MHz
Ton, Toff
50% control to 90% RF, and 50% control to 10% RF
µS
mV
uA
1
Transients
Gate Leakage
In Band
10
|Vc| = 2.5V
100
2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 100 pF for
0.5 GHz - 2.5 GHz.
3. IP3 slope versus input power is approximately 1.5:1.
Truth Table 4
V1
V2
V3
ANT– RF1
ANT - RF2
ANT - RF3
+2.5 to +5V
0 + 0.2V
0 + 0.2V
+2.5 to +5V
0 + 0.2V
0 + 0.2V
0 + 0.2V
On
Off
Off
Off
On
Off
Off
Off
On
0 + 0.2V
+2.5 to +5V
4. External DC blocking capacitors are required on all RF ports
2
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
GaAs SP3T 2.5V High Power Switch
Typical Performance Curves
MASWSS0033
V 1.04
Insertion Loss vs. Frequency,
25 oC, 100 pF
Isolation vs. Frequency,
25 oC, 100 pF
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0
-5
-10
-15
-20
-25
-30
-35
0.5
1
1.5
2
2.5
0.5
1
1.5
2
2.5
Frequency (GHz)
Frequency (GHz)
Harmonic Rejection vs. Frequency,
25 oC, 100 pF
-60
Pin = +34 dBm @ 1 GHz
-65
-70
3rd Harmonic
-75
-80
-85
2nd Harmonic
2
3
4
5
Vctrl (V)
3
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
GaAs SP3T 2.5V High Power Switch
FQFP 12-lead 3x3 mm Low Profile
MASWSS0033
V 1.04
4
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
GaAs SP3T 2.5V High Power Switch
Handling Procedures
MASWSS0033
V 1.04
The following precautions should be observed to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are ESD sensitive
and can be damaged by static electricity. Proper ESD
techniques should be used when handling these devices.
Ordering Information
Part Number
Package
MASWSS0033
FQFP-N 12-lead Thin Plastic Package
MASWSS0033TR
1000 piece reel
MASWSS0033SMB
Sample Test Board
5
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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