MASWSS0117_V3 [TE]

GaAs SPDT 2.7 V High Power Switch; 砷化镓SPDT 2.7 V高功率​​开关
MASWSS0117_V3
型号: MASWSS0117_V3
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

GaAs SPDT 2.7 V High Power Switch
砷化镓SPDT 2.7 V高功率​​开关

开关 光电二极管
文件: 总3页 (文件大小:138K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MASWSS0117  
GaAs SPDT 2.7 V High Power Switch  
DC - 3.0 GHz  
Rev. V3  
Functional Block Diagram  
Features  
Low Voltage Operation: 2.7 V  
High IP3: +56 dBm  
Low Insertion Loss: 0.30 dB at 1 GHz  
High Isolation: 25 dB at 1 GHz  
SC70 6-Lead Package  
0.5 micron GaAs PHEMT Process  
Description  
The MASWSS0117 is a GaAs pHEMT MMIC single  
pole double throw (SPDT) high power switch in a low  
cost SC70 6-lead package. The MASWSS0117 is  
ideally suited for applications where high power, low  
control voltage, low insertion loss, high isolation,  
small size and low cost are required.  
Pin Configuration  
Typical applications are for CDMA handset systems  
that connect separate transceiver and/or GPS  
functions to a common antenna, as well as other  
related handset and general purpose applications.  
The MASWSS0117 can be used in all systems  
operating up to 3.0 GHz requiring high power at low  
control voltage.  
Pin No.  
Pin Name  
V2  
Description  
1
2
3
4
5
6
Vcontrol 2  
RF Common  
Vcontrol 1  
RF Port 1  
RFC  
V1  
RF1  
The MASWSS0117 is fabricated using a 0.5 micron  
gate length GaAs pHEMT process. The process  
features full passivation for performance and  
reliability.  
GND  
RF2  
RF Ground  
RF Port 2  
MASWSS0117 orientation in tape  
MASWSS0117 Device Marking  
Ordering Information1  
Part Number  
MASWSS0117  
Package  
Bulk Packaging  
1000 piece reel  
3000 piece reel  
Sample Test Board  
MASWSS0117TR  
MASWSS0117TR-3000  
MASWSS0117SMB  
1. Reference Application Note M513 for reel size information.  
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383  
China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MASWSS0117  
GaAs SPDT 2.7 V High Power Switch  
DC - 3.0 GHz  
Rev. V3  
Electrical Specifications: TA = 25°C, VC = 0 V / 2.7 V, Z0 = 50 2  
Parameter  
Test Conditions  
Units  
Min.  
Typ.  
Max.  
DC - 1 GHz  
1 - 2 GHz  
2 - 3 GHz  
0.30  
0.35  
0.35  
0.65  
Insertion Loss3  
dB  
DC - 1 GHz  
1 - 2 GHz  
2 - 3 GHz  
23  
25  
19  
15  
Isolation  
dB  
Return Loss  
IP3  
DC - 3 GHz  
dB  
20  
56  
825 MHz  
dBm  
Two Tone, +24 dBm Total Pin, 5 MHz Spacing  
For Cell Band: Two-tone signal input: Tx1 = +22  
dBm @ 820 MHz, Tx2 = +22 dBm @ 821 MHz,  
RX interfere = -23 dBm @ 869 MHz.  
dBm  
dBm  
-99  
-94  
Cross Modulation  
For PCS Band: Two-tone signal input: Tx1 = +18  
dBm @ 1880 MHz, Tx2 = +18 dBm @ 1881 MHz,  
RX interfere = -23 dBm @ 1960 MHz.  
P0.1dB  
1.0 GHz  
dBm  
ns  
38  
70  
Trise, Tfall  
10% to 90% RF, 90% to 10% RF  
50% control to 90% RF  
50% control to 10% RF  
Ton, Toff  
ns  
100  
Transients  
In Band  
mV  
µA  
25  
5
Control Current  
VC = 2.7 V  
20  
2. For positive voltage control, external DC blocking capacitors are required on all RF ports.  
3. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 1 GHz, 39 pF for 0.5 - 3 GHz.  
Absolute Maximum Ratings 4,5  
Truth Table 6,7,8  
Parameter  
Absolute Maximum  
V1  
V2  
ANT– RF1 ANT - RF2  
Input Power  
(0.5 - 3 GHz, 3 V Control)  
+38 dBm  
1
0
0
1
On  
Off  
Off  
On  
Operating Voltage  
Operating Temperature  
Storage Temperature  
+8.5 volts  
6. For positive voltage control, external DC blocking capacitors  
are required on all RF ports.  
7. Differential voltage, V (state 1) - V (state 0), must be +2.7 V  
minimum, but must not exceed 8.5 V.  
-40°C to +85°C  
-65°C to +150°C  
8. 0 = -5 V to +2.3 V, 1 = -2.3 V to +5 V.  
4. Exceeding any one or combination of these limits may cause  
permanent damage to this device.  
5. M/A-COM does not recommend sustained operation near  
these survivability limits.  
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383  
China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MASWSS0117  
GaAs SPDT 2.7 V High Power Switch  
DC - 3.0 GHz  
Rev. V3  
Typical Performance Curves vs. Frequency, 39 pF  
Insertion Loss  
Isolation  
0.6  
40  
30  
20  
10  
0
+25°C  
+85°C  
-40°C  
+25°C  
+85°C  
-40°C  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
Frequency (GHz)  
Frequency (GHz)  
Return Loss  
Qualification  
Qualified to M/A-COM specification REL-201,  
Process Flow –2.  
0
+25°C  
-40°C  
+85°C  
-5  
-10  
-15  
-20  
-25  
-30  
Handling Procedures  
Please observe the following precautions to avoid  
damage:  
Static Sensitivity  
Gallium Arsenide Integrated Circuits are sensitive  
to electrostatic discharge (ESD) and can be  
damaged by static electricity. Proper ESD control  
techniques should be used when handling these  
devices.  
-35  
0
1
2
3
4
5
6
Frequency (GHz)  
SC-70 Plastic Package†  
3
ADMVAeNeCtsEDJ:EDDatEa SChemetosicsotnutraein sinefonrmsiattiivointyrelgeavrdeinlg1arperoqduuicrteMm/Ae-CnOtsM. Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383  
China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  

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