MASWSS0161_14 [TE]

High Power GaAs SPDT Switch;
MASWSS0161_14
型号: MASWSS0161_14
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

High Power GaAs SPDT Switch

光电二极管
文件: 总4页 (文件大小:667K)
中文:  中文翻译
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MASWSS0161  
High Power GaAs SPDT Switch  
DC - 2.0 GHz  
Rev. V4  
Features  
Functional Schematic  
Positive Supply and Control Voltages  
1 dB Compression Point: 36 dBm @ 8 V  
3rd Order Intercept Point: 65 dBm @ 8 V  
Low Insertion Loss: 0.4 dB  
Low Power Consumption: 100 µW  
Fast Switching Speed  
Lead-Free SOIC-8 Plastic Package  
Halogen-Free “Green” Mold Compound  
260°C Re-flow Compatible  
8
7
6
5
RoHS* Compliant Version of SW-277  
Description  
The MASWSS0161 is a GaAs MMIC SPDT switch in  
a lead free SOIC-8 lead surface mount plastic  
package. This device is ideally suited for use where  
low power consumption is required. Typical  
applications include transmit/receive switching,  
switch matrices and switched filter banks in systems  
such as radio and cellular equipment, PCM, GPS,  
fiber optic modules, and other battery powered radio  
equipment.  
2
3
4
1
Pin Configuration3  
Pin No.  
Pin Name  
GND  
VDD  
Description  
1
2
3
4
5
6
7
Ground, Thermal Contact  
Drain Voltage  
The MASWSS0161 is fabricated using a monolithic  
GaAs MMIC using a mature 1 micron process. The  
process features full chip passivation for increased  
performance and reliability.  
RFC  
RF Common Port  
Ground, Thermal Contact  
RF Port 1  
GND  
RF1  
Ordering Information1,2  
Part Number  
MASWSS0161  
Package  
VC1  
Control 1  
Bulk Packaging  
1000 piece reel  
Sample Test Board  
VC2  
Control 2  
MASWSS0161TR  
MASWSS0161SMB  
8
RF2  
RF Port 2  
3. External DC blocking capacitors required on all RF ports.  
1. Reference Application Note M513 for reel size information.  
2. All sample boards include 5 loose parts.  
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.  
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  
MASWSS0161  
High Power GaAs SPDT Switch  
DC - 2.0 GHz  
Rev. V4  
Electrical Specifications4: TA = +25°C, VDD = +5 V, VC = +5 V / 0 V, PIN = +30 dBm  
Parameter  
Test Conditions  
Units  
Min.  
Typ.5  
Max.  
DC - 0.5 GHz  
0.5 - 1.0 GHz  
1.0 - 2.0 GHz  
0.45  
0.55  
0.6  
0.65  
Insertion Loss  
dB  
DC - 0.5 GHz  
0.5 - 1.0 GHz  
1.0 - 2.0 GHz  
27  
30  
32  
27  
Isolation  
dB  
VSWR  
DC - 2.0 GHz  
Ratio  
dBm  
1.2:1  
Input Power (5 V Supply/Control) 0.9 GHz  
Input Power (8 V Supply/Control) 0.9 GHz  
33  
35.8  
1 dB Compression  
TRISE, TFALL  
TON, TOFF  
10% to 90% RF, 90% to 10% RF  
50% Control to 90% RF, 50% Control to 10% RF  
In-Band  
ns  
ns  
30  
35  
12  
Transients  
mV  
Measured Relative to Input Power,  
2-tone up to +10 dBm  
3rd Order Intercept  
55  
65  
(5 V Supply/Control) 0.9 GHz  
(8 V Supply/Control) 0.9 GHz  
dBm  
Control Current  
Supply Current  
VC = +5 V  
µA  
µA  
20  
60  
VDD = +5 V  
4. All specifications apply when operated with control voltages of 0 V for VC low and 5 to 10 V for VC high, and 50 Ω impedance at all RF  
ports, unless otherwise specified. High power (greater than 1 W) handling specifications apply to cold switching only. For input powers  
under 1 W, hot switching can be used. The high control voltage must be within ± 0.2 V of the supply voltage. External DC blocking  
capacitors are required on all RF ports.  
5. Typical values listed for middle of frequency range noted.  
Absolute Maximum Ratings6,7  
Truth Table9  
Condition of Switch  
RF Common to Each RF Port  
Parameter  
Absolute Maximum  
Control Inputs  
Input Power - 0.5 - 2.0 GHz  
5 V Control and Supply  
8 V Control and Supply  
10 V Control and Supply  
VC1  
1
VC2  
0
RF1  
Off  
RF2  
On  
37 dBm  
40 dBm  
42 dBm  
Power Dissipation  
Supply Voltage  
1.0 W  
0
1
On  
Off  
-1 V ≤ VDD ≤ +12 V  
-1 V ≤ VC ≤ VDD +0.2 V  
-40°C to +85°C  
9. “0” = 0 to +0.2 V @ 20 µA maximum.  
“1” = +5 V @ 20 µA typical to 10 V @ 500 µA maximum.  
Control Voltage  
Operating Temperature  
Storage Temperature  
-65°C to +150°C  
Thermal Resistance8  
θJC = 87°C/W  
6. Exceeding any one or combination of these limits may cause  
permanent damage to this device.  
7. MACOM does not recommend sustained operation near these  
survivability limits.  
8. Thermal resistance is given for TA = +25°C. TCASE is the  
temperature of leads 1 and 4.  
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  
MASWSS0161  
High Power GaAs SPDT Switch  
DC - 2.0 GHz  
Rev. V4  
Typical Performance Curves  
Isolation  
Insertion Loss  
1.0  
40  
0.8  
0.6  
0.4  
0.2  
0.0  
35  
30  
25  
20  
+25°C  
-40°C  
85°C  
+25°C  
-40°C  
+85°C  
15  
0.5  
0.5  
1.0  
1.5  
2.0  
1.0  
1.5  
2.0  
Frequency (GHz)  
Frequency (GHz)  
Compression vs. Control Voltage @ 900 MHz  
VSWR  
2.0  
40  
+25°C  
-40°C  
+85°C  
35  
30  
1.8  
1.6  
1.4  
1.2  
1.0  
25  
1dB  
.1dB  
20  
15  
10  
0.5  
1.0  
1.5  
2.0  
3
4
5
6
7
8
9
10  
Frequency (GHz)  
Control Voltage (VDC)  
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  
MASWSS0161  
High Power GaAs SPDT Switch  
DC - 2.0 GHz  
Rev. V4  
Lead-Free SOIC-8†  
Reference Application Note M538 for lead-free solder reflow recommendations.  
Meets JEDEC moisture sensitivity level 1 requirements.  
Plating is 100% matte tin over copper.  
Handling Procedures  
Please observe the following precautions to avoid  
damage:  
Static Sensitivity  
Gallium Arsenide Integrated Circuits are sensitive  
to electrostatic discharge (ESD) and can be  
damaged by static electricity. Proper ESD control  
techniques should be used when handling these  
devices.  
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  

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