MAVR-000146-12030W [TE]
GaAs Flip-Chip Multiplier Varactor Diode;
| 型号： | MAVR-000146-12030W |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaAs Flip-Chip Multiplier Varactor Diode |
| 文件： | 总4页 (文件大小：515K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA46H146 / MAVR-000146
GaAs Flip-Chip Multiplier Varactor Diode
0.50 Gamma Abrupt
Rev. V5
Features
Chip Layout
Very Low Total Capacitance < 0.06 pF
Extremely High Q > 15 K
Silicon Nitride Passivation
Polymer Scratch Protection
Surface Mount Configuration
RoHS* Compliant
Description
Front View (Circuit Side)
The MA46H146 / MAVR-000146 is a gallium
arsenide flip chip multiplier varactor. These devices
are facilitated on MOVPE epitaxial wafers using a
process designed for high device uniformity and
extremely low parasitics. These flip-chip diodes are
fully passivated with silicon nitride and have an
additional polymide layer for scratch protection. The
protective coatings prevent damage to the junction
during automated or manual handling. The flip chip
configuration is suitable for pick and place insertion.
Back View (Operator Side)
These GaAs flip chip devices are ideally suited for
millimeter wave frequency tunable filters, where
extremely low parasitics are required to maintain
reasonable Q. In addition, this product can be used
in multiplier circuits, for 2X and 3X output
frequencies in the millimeter wave frequency bands
Schematic
Flip-chip tuning varactor equivalent circuit
RS
CJ (V)
LS
Ordering Information
Part Number
MA46H146
Package
100 piece gel pack
100 piece waffle pack
Cparasitic
MAVR-000146-12030W
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA46H146 / MAVR-000146
GaAs Flip-Chip Multiplier Varactor Diode
0.50 Gamma Abrupt
Rev. V5
Electrical Specifications: TA = +25°C, Gamma = 0.45 - 0.55, VR = 0 to 20 V
Parameter
Test Conditions
Units
Min.
Typ.
Max.
VR = 0 V, 1 MHz
VR = 4 V, 1 MHz
VR = 10 V, 1 MHz
VR = 25 V, 1 MHz
—
0.033
—
0.063
0.040
0.032
0.030
—
0.060
—
Total Capacitance
pF
—
—
Total Capacitance Ratio
Q Minimum
VR = 0 V / 25 V
VR = 4 V, 50 MHz
10 µA
—
—
V
—
—
26
—
2.1
15600
—
—
—
—
50
Breakdown Voltage
Reverse Current
18 V
nA
—
Absolute Maximum Ratings1,2
Handling Procedures
Parameter
Absolute Maximum
Please observe the following precautions to avoid
damage:
Reverse Voltage
-26 V
50 mA
Forward Current
Static Sensitivity
Operating Temperature
Storage Temperature
Mounting Temperature
-65°C to +150°C
-65°C to +150°C
<200°C
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these devices.
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. MACOM does not recommend sustained operation near these
survivability limits.
Typical Performance Curves
Capacitance vs. Reverse Bias Voltage
Resistance @ 4 GHz vs. Reverse Bias Voltage
0.100
4
0.075
0.050
0.025
0.000
3
2
1
0
0
5
10
15
20
25
0
5
10
15
20
25
Reverse Bias (V)
Reverse Bias (V)
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA46H146 / MAVR-000146
GaAs Flip-Chip Multiplier Varactor Diode
0.50 Gamma Abrupt
Rev. V5
Handling Procedures
Assembly Requirements
Please observe the following precautions to avoid
damage to the GaAs flip-chips:
Using Electrically Conductive Ag Epoxy
These chips are designed to be inserted onto hard
or soft substrates with the junction side down. They
must be mounted with electrically conductive Ag
epoxy. The die can also be assembled with the
junction side up, and wire or ribbon bonds made
from the bond pads to the circuit trace. Circuit can
be preheated to 125 - 150°C. Use a controlled
amount of conductive epoxy for each bond pad.
Finished, uniform silver epoxy thickness should be
between 1 - 2 mils. Cure epoxy per manufacturer’s
schedule. For extended cure times, temperatures
must be below 200°C.
Cleanliness
These chips should be handled in a clean
environment. Do not attempt to clean die after
installation.
General Handling
The protective polymer coating on the active areas
of these devices provides scratch protection,
particularly for the metal airbridge which contacts
the anode. Dice can be handled with tweezers or
vacuum pickups and are suitable for use with
automatic pick-and-place equipment.
Solders are not recommended due to Tungsten
metallization beneath the gold contacts.
Inches
Min.
Millimeters
Dimensions
Dimension
Max.
0.027
0.015
0.008
0.009
0.008
0.017
Min.
Max.
0.69
0.38
0.20
0.23
0.20
0.43
A
B
C
D
E
F
0.025
0.012
0.006
0.007
0.006
0.015
0.64
0.30
0.15
0.18
0.15
0.38
Circuit Mounting Dimensions (inches)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA46H146 / MAVR-000146
GaAs Flip-Chip Multiplier Varactor Diode
0.50 Gamma Abrupt
Rev. V5
M/A-COM Technology Solutions Inc. All rights reserved.
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4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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