MGST [TE]
GRID HIGH-PERFORMANCE RELAYS; GRID高性能继电器
| 型号： | MGST |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GRID HIGH-PERFORMANCE RELAYS |
| 文件： | 总2页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
■
■
■
MGS MGSD MGSDD MGST
MGS
MGSD
MGSDD
MGST
SENSITIVE .100 GRID
HIGH-PERFORMANCE RELAY
SENSITIVE .100 GRID
DIODE SUPPRESSED
SENSITIVE .100 GRID DIODE
SUPPRESSED/PROTECTED
HIGH-PERFORMANCE RELAY
SENSITIVE .100 GRID DIODE
SUPPRESSED/MOSFET
DRIVEN HIGH-PERFORMANCE
RELAY
HIGH-PERFORMANCE RELAY
QUALIFIED TO
MIL-R-39016/41
QUALIFIED TO
MIL-R-39016/42
QUALIFIED TO
MIL-R-39016/43
QUALIFIED TO
MIL-R-28776/7
X2
–
X1
X2
–
X2
G
X1
_
+
A2
A1
B2
B1
A2
A1
B2
B1
A2
A1
B2
B1
A2
A1
A3
B2
B1
B3
A3
B3
A3
B3
A3
B3
+
+
X1
X2
X1
TERMINAL VIEW
TERMINAL VIEW
TERMINAL VIEW
TERMINAL VIEW
FEATURES
FEATURES
FEATURES
FEATURES
■ Suppression diode
■ Hermetically sealed
■ High shock & vibration ■ Hermetically sealed
■ Suppression &
protection diodes
■ MOSFET driver, zener
& suppression diodes
■ Hermetically sealed
■ Hermetically sealed
■ High shock & vibration
ratings
ratings
■ High shock & vibration ■ High shock & vibration
■ Mounting pads
■ Mounting pads
■ Excellent RF switching
ratings
■ Mounting pads
■ Excellent RF switching
ratings
■ Mounting pads
■ Excellent RF switching
■ Excellent RF switching
ELECTRICAL CHARACTERISTICS
CONTACT RATINGS
TYPE
CONTACT ARRANGEMENT
2 Form C (DPDT)
CONTACT
LOAD
OPERATIONS
MIN.
CONTACT MATERIAL
1.0 A @ 28 Vdc
Resistive
100,000
Stationary:
250 mA @ 115 Vac, 60 Hz & 400 Hz Resistive (case not grounded) 100,000
Gold/platinum/palladium/silver
(gold plated)
100 mA @ 115 Vac, 60 Hz & 400 Hz Resistive
100,000
100,000
100,000
1,000,000
50,000
0.2 A @ 28 Vdc
0.1 A @ 28 Vdc
30 µA @ 50 mVdc
0.1 A @ 28 Vdc
Inductive (0.32 Henry)
Lamp
Low Level
Intermediate Current
Moveable:
Gold/platinum/palladium/silver
(gold plated)
CONTACT RESISTANCE
.335 (8.51) SQ MAX
.335 (8.51) MAX
.435 (11.05) MAX
Before Life: 100 milliohms max.
(measured @ 10 mA @ 6 Vdc)
.375 (9.53)
MAX
.375 (9.53)
MAX
After Life: 200 milliohms max.
(measured @ 1 A @ 28 Vdc)
TERMINALS
MECHANICAL LIFE EXPECTANCY
1 million operations
C .500 MIN (12.7)
P .187 .010 (4.75 .25)
(Length excludes mounting pad)
COIL VOLTAGE
5 to 48 Vdc
.017+.002 (0.43) DIA
.017+.002 (0.43) DIA
-.001
-.001
8 PINS
9 PINS
.370 (9.40) SQ MAX
.370 (9.40) MAX
MGS/MGSD/MGSDD ENCLOSURE
MGST ENCLOSURE
COIL POWER
565 mW max. @ 25°C
DUTY CYCLE
Continuous
MGS
.375 (9.40) MAX
.035
(0.98)
.031 .003 (0.79)
.375 (9.40) SQ MAX
.031 .003 (0.79)
.035
(0.98)
.100
(2.54)
PICK-UP VOLTAGE
Approximately 50% of
nominal coil voltage
.475
(11.94)
MAX
.100
(2.54)
PICK-UP SENSITIVITY
60 mW max. @ 25°C
.100
(2.54)
GROUND PIN
(OPTIONAL)
.100
(2.54)
GROUND PIN
(OPTIONAL)
MGST
MGS/MGSD/MGSDD HEADER
MGST HEADER
18
Tyco Electronics Corporation www.tycoelectronics.com 800-522-6752 (U.S.A.) or 717-564-0100 Specifications subject to change. CII and TYCO are trademarks. ©2003 by Tyco Electronics Corporation
OPERATING CHARACTERISTICS
TIMING
ENVIRONMENTAL CHARACTERISTICS
SEMICONDUCTOR CHARACTERISTICS
DIODE
TEMPERATURE RANGE
100 Vdc peak inverse voltage (PIV)
1.0 Vdc max. transient voltage
OperateTime:
4.0 ms max.
-65°C to +125°C
WEIGHT
ZENER DIODE
20 Vdc 3 Vdc over temperature
range
Release Time:
0.09 oz. (2.55 gms)
0.129 oz. (3.45 gms) w/ mounting
pad attached
VIBRATION RESISTANCE
30 G’s, 10 to 3,000 Hz
MGS: 2.0 ms max.
MGSD/MGSDD: 7.5 ms max.
(suppression diode, protection/sup-
pression diodes)
MOSFET
0.5 Vdc min. gate turn off voltage
4.3 Vdc max. gate turn on voltage
MGST: 7.5 ms max.
(suppression/zener diodes)
SHOCK RESISTANCE
75 G’s, 6 1 ms max.
CONTACT BOUNCE
1.5 ms max.
DIELECTRIC WITHSTANDING VOLTAGE
Between Open Contacts:
500 Vrms 60 Hz
QPL APPROVAL
MIL-R-39016/41 (JMGS)
MIL-R-39016/42 (JMGSD)
MIL-R-39016/43 (JMGSDD)
MIL-R-28776/7 (JMGST)
Between Adjacent Contacts:
500 Vrms 60 Hz
.014 (0.36)
.014 .003 (0.36)
.094 (2.39) DIA
Between Contacts & Coil:
500 Vrms 60 Hz
FULL R
2 PLS
0.47 (1.19) DIA
INSULATION RESISTANCE
10,000 megohms min. @ 500 Vdc
1,000 megohms @ 500 Vdc
(coil to case @ +125°C)
.256
(6.50)
.140– .175 DIA
(3.56–4.45)
W
W
.140– .170
(3.56–4.32)
MGS/MGSD/MGSDD
MOUNTING PAD
MGST
MOUNTING PAD
COIL DATA
NOM.
COIL
VOLTAGE
(Vdc)
COIL
COIL CIRCUIT
CURRENT
mA (MAX.)
COIL CIRCUIT
CURRENT
mA (MIN.)
PICKUP
VOLTAGE
Vdc (MAX.)
ꢁ 2ꢂ5C
PICKUP
VOLTAGE
Vdc (MAX.)
ꢁ 12ꢂ5C
DROP-OUT
VOLTAGE
Vdc (MIN.)
ꢁ 2ꢂ5C
DROP-OUT
VOLTAGE
Vdc (MIN.)
ꢁ -6ꢂ5C
NOM. COIL
POWER
(mW)
MAX.
COIL
VOLTAGE
COIL
DESIG.
RESISTANCE
IN OHMS
10ꢀ ꢁ 2ꢂ5C
ꢁ 2ꢂ5C
(Note)
(Note)
(Note)
MGS/MGSD
5.0
100
200
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
2.6
3.4
4.85
7.0
9.8
14.0
20.0
25.8
3.5
4.5
0.23
0.28
0.55
0.64
0.92
1.4
0.12
0.18
0.35
0.41
0.59
0.89
1.25
1.60
250
180
203
180
203
219
199
209
7.5
10.0
15.0
20.0
30.0
40.0
57.0
75.0
5
6
6.0
9.0
400
6.8
9
12.0
18.0
26.5
36.0
48.0
800
9.0
12
18
26
36
48
1,600
3,200
6,500
11,000
13.5
18.0
27.0
36.0
1.8
2.4
MGSDD
5.0
64
125
78.1
48.9
23.6
16.0
12.2
9.0
56.8
36.3
18.1
12.5
9.6
2.9
4.0
3.7
4.8
0.8
0.9
1.1
1.3
1.5
1.7
2.3
2.8
0.7
0.8
0.9
1.0
1.1
1.3
1.7
2.0
391
288
203
180
203
219
199
209
7.5
10.0
15.0
20.0
30.0
40.0
57.0
75.0
5
6
6.0
9.0
400
6.1
8.0
9
12.0
18.0
26.5
36.0
48.0
800
7.8
11.0
14.5
19.0
27.2
34.8
12
18
26
36
48
1,600
3,200
6,500
11,000
11.3
15.2
21.7
27.8
7.2
6.1
4.9
3.9
4.8
MGST
5.0
100
200
56.0
33.0
26.4
17.7
13.8
10.2
43.0
27.0
17.8
11.3
8.4
2.9
3.5
4.0
4.9
0.23
0.32
0.48
0.65
0.97
1.30
0.13
0.18
0.27
0.36
0.54
0.72
250
180
203
180
203
219
5.6
8.0
12.0
16.0
24.0
32.0
5
6
6.0
9.0
400
5.3
7.3
9
12.0
18.0
26.5
800
1,600
3,200
7.1
10.6
14.2
9.8
14.6
19.5
12
18
26
5.8
Note: Coil resistance not directly measurable. Coil current should be within limits shown when tested at nominal voltage at 25°C for 5 seconds max.
DIODES
SPECIFYING A PART NUMBER EXAMPLE:
TYPE
MGS
TERMINALS
TRANSISTOR
GROUND PINS
COILS
-26
MOUNTING PADS
C
D
G
W
19
Tyco Electronics Corporation www.tycoelectronics.com 800-522-6752 (U.S.A.) or 717-564-0100 Specifications subject to change. CII and TYCO are trademarks. ©2003 by Tyco Electronics Corporation
相关型号：
©2020 ICPDF网 联系我们和版权申明