MRF134 [TE]
N.CHANNEL MOS BROADBAND RF POWER FET; N.CHANNEL MOS宽带射频功率场效应管
| 型号： | MRF134 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | N.CHANNEL MOS BROADBAND RF POWER FET |
| 文件： | 总10页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF134/D
The RF MOSFET Line
R
F
P
o
w
e
r
F
i
e
l
d
-
E
ff
e
c
t
T
r
a
n
s
i
s
t
o
r
M
R
F
1
3
4
N–Channel Enhancement–Mode
. . . designed for wideband large–signal amplifier and oscillator applications up
to 400 MHz range.
•
Guaranteed 28 Volt, 150 MHz Performance
Output Power = 5.0 Watts
Minimum Gain = 11 dB
Efficiency — 55% (Typical)
5.0 W, to 400 MHz
N–CHANNEL MOS
BROADBAND RF POWER
FET
•
•
Small–Signal and Large–Signal Characterization
Typical Performance at 400 MHz, 28 Vdc, 5.0 W
Output = 10.6 dB Gain
•
100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
•
•
Low Noise Figure — 2.0 dB (Typ) at 200 mA, 150 MHz
Excellent Thermal Stability, Ideally Suited For Class A
Operation
D
G
S
CASE 211–07, STYLE 2
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Drain–Source Voltage
Drain–Gate Voltage
V
DSS
DGR
V
65
(R = 1.0 MΩ)
GS
Gate–Source Voltage
V
±40
Vdc
Adc
GS
Drain Current — Continuous
I
0.9
D
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
17.5
0.1
Watts
W/°C
C
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Rating
Thermal Resistance, Junction to Case
Symbol
Value
Unit
R
10
°C/W
θ
JC
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (V = 0, I = 5.0 mA)
V
65
—
—
—
—
—
—
Vdc
mAdc
µAdc
GS
D
(BR)DSS
Zero Gate Voltage Drain Current (V = 28 V, V = 0)
I
1.0
1.0
DS
GS
DSS
GSS
Gate–Source Leakage Current (V = 20 V, V = 0)
I
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage (I = 10 mA, V = 10 V)
V
GS(th)
1.0
80
3.5
6.0
—
Vdc
D
DS
Forward Transconductance (V = 10 V, I = 100 mA)
g
fs
110
mmhos
DS
DYNAMIC CHARACTERISTICS
Input Capacitance
D
C
—
—
—
7.0
9.7
2.3
—
—
—
pF
pF
pF
iss
(V = 28 V, V = 0, f = 1.0 MHz)
DS
GS
Output Capacitance
(V = 28 V, V = 0, f = 1.0 MHz)
C
oss
DS
GS
Reverse Transfer Capacitance
(V = 28 V, V = 0, f = 1.0 MHz)
C
rss
DS
GS
FUNCTIONAL CHARACTERISTICS
Noise Figure
(V = 28 Vdc, I = 200 mA, f = 150 MHz)
DS
NF
—
2.0
—
dB
dB
D
Common Source Power Gain
(V = 28 Vdc, P = 5.0 W, I = 50 mA)
G
ps
DD
out
DQ
f = 150 MHz (Fig. 1)
f = 400 MHz (Fig. 14)
11
—
14
10.6
—
—
Drain Efficiency (Fig. 1)
(V = 28 Vdc, P = 5.0 W, f = 150 MHz, I = 50 mA)
η
50
55
—
%
DD
out
DQ
Electrical Ruggedness (Fig. 1)
(V = 28 Vdc, P = 5.0 W, f = 150 MHz, I = 50 mA,
ψ
No Degradation in Output Power
DD
out
DQ
VSWR 30:1 at all Phase Angles)
L 4
R 3 *
R 4
+
ą
V
=
2 8
V
D D
C
1
0
C11
C4
D
1
C7
+
-
C
8
C9
C
1
2
L
3
R
5
R
2
C
5
C
6
R
F
O
U
T
P
U
T
R
1
L
2
L
1
R
F
I
N
P
U
T
C
3
D
U
T
C
1
C 2
*Bias Adjust
C1, C4 — Arco 406, 15–115 pF
C2 — Arco 403, 3.0–35 pF
C3 — Arco 402, 1.5–20 pF
L3 — 20 Turns, #20 AWG Enamel Wound on R5
L4 — Ferroxcube VK–200 — 19/4B
R1 — 68 Ω, 1.0 W Thin Film
C5, C6, C7, C8, C12 — 0.1 µF Erie Redcap
C9 — 10 µF, 50 V
C10, C11 — 680 pF Feedthru
D1 — 1N5925A Motorola Zener
L1 — 3 Turns, 0.310″ ID, #18 AWG Enamel, 0.2″ Long
L2 — 3–1/2 Turns, 0.310″ ID, #18 AWG Enamel, 0.25″ Long
R2 — 10 kΩ, 1/4 W
R3 — 10 Turns, 10 kΩ Beckman Instruments 8108
R4 — 1.8 kΩ, 1/2 W
R5 — 1.0 MΩ, 2.0 W Carbon
Board — G10, 62 mils
Figure 1. 150 MHz Test Circuit
REV 6
2
1
0
5
f
=
1 00 MH z
1
5
0
8
6
4
4
3
2
f
=
1 0 0 MH z
2 25
4 00
1 5 0
2 2 5
4 0 0
2
0
1
0
V
=
=
2 8
5 0 mA
V
V
=
=
1 3 .5
5 0 mA
V
D
D
D D
I
I
D
Q
D Q
0
2
0
0
4
0
0
60 0
8 00
1 00 0
0
2 00
4 00
6
0
0
8 00
1 0 00
P , I NP UT P OWE R ( M IL LWATT S )
in
P , I NP UT P O WE R (M I LLWATTS )
i n
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Input Power
8
6
4
2
0
8
6
4
2
0
P
=
60 0 mW
3 00 mW
P
=
8 0 0 mW
in
i n
4
0
0
m
W
1 50 mW
2 0 0 mW
I
f
=
5 0 mA
1 00 MH z
I
f
=
5 0 mA
1 5 0 MH z
D Q
D
Q
=
=
1
2
1
4
16
18
20
22
24
2
6
2 8
1 2
1
4
1
6
1 8
V , S UP PLY V O LTA G E (V O LTS)
D D
2
0
2
2
2
4
2
6
2
8
V
D D
,
S
U
P
P
L
Y
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
8
8
P
=
8 00 mW
4 00 mW
2 00 mW
i
n
P
=
8
0
0
m
W
i
n
I
f
=
5 0 mA
4 00 MH z
D
Q
6
4
2
0
6
4
2
0
=
4 0 0 mW
2 0 0 mW
I
f
=
5
0
m
A
D
Q
=
2
2
5
M
H
z
1 2
1
4
1
6
1
8
2
0
2
2
2
4
2
6
2
8
1
2
1
4
1
6
1 8
V , S UP PLY V O LTA G E (V O LTS)
D D
2
0
2
2
2
4
2
6
2 8
V
D D
,
S UP PLY V OLTA GE ( VO LTS )
Figure 6. Output Power versus Supply Voltage
Figure 7. Output Power versus Supply Voltage
REV 6
3
6
5
4
5 00
4 00
V
I
=
=
=
2 8
5 0 m A
C ON STA NT
V
D D
V
D S
=
1 0
V
D Q
P
in
f
=
40 0 M Hz
3 00
2 00
1
5
0
M
H
z
3
2
TY P I CA L DE V I CE S HO WN ,
1 00
0
1
0
V
G S (t h)
=
3 .5
V
TY PI C AL D EVI C E S HO WN ,
3. 5
V
=
V
G S( th )
- 2
- 1
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
V
GS
,
G ATE - SO UR C E V OLTA GE ( VO LTS )
V
G S
,
G ATE - S OU RCE V O LTA G E (V O LTS )
Figure 8. Output Power versus Gate Voltage
Figure 9. Drain Current versus Gate Voltage
(Transfer Characteristics)
1. 0 2
1
5
0
V
=
28
V
D D
I
=
2
0
0
m
A
D
Q
4 0
3 0
0
.
9
8
10 0 mA
50 mA
2
| S |
21
G
M A X
=
2
2
(1
-
|| S) (1 - | ) | S
1 1 22
0. 96
0. 94
2 0
1 0
0
V
D S
=
2
8
V
0. 92
0. 9
I
D
=
1 00 mA d c
-
2
5
0
25
50
75
1
0
0
125
1 50
1
1 0
1 00
1
0
0
0
T , C ASE TE M PER ATU R°CE)
C
(
f , FRE Q UE NC Y (M Hz)
Figure 10. Gate–Source Voltage versus
Case Temperature
Figure 11. Maximum Available Gain
versus Frequency
28
24
20
16
12
8
1
V
f
=
1
0
MH z
V
G S
=
0 .7
0 .5
0 .3
0 .2
T
=
°
C
2
5
C
0
.
1
0 . 07
0 . 05
C
o
s
s
C
i
s
s
0 . 03
0 . 02
4
C
r
s
s
0
.
0
1
0
0
4
8
1
2
1
6
2
0
2
4
2
8
1
2
5
1
0
2
0
5
0
7
0
1
0
0
V
D S
,
D
R
A
I
N
-
S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
O
L
T
S
)
V
D S
,
D
R
A
I
N
-
S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Figure 12. Capacitance versus Voltage
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
REV 6
4
L
2
R3 *
R4
C9
C11
V
D D
=
2 8
V
+
C1 2
Z4
C1 3
C1 4
D 1
-
C
1
0
L 1
R 2
Z5
C6
C7
C8
RF O U TPU T
R1
Z
1
Z
2
Z3
C1
R F IN PU T
C
4
C5
DUT
C 2
C
3
*Bias Adjust
C1, C6 — 270 pF, ATC 100 mils
R2 — 10 kΩ, 1/4 W
C2, C3, C4, C5 — 0–20 pF Johanson
C7, C9, C10, C14 — 0.1 µF Erie Redcap, 50 V
C8 — 0.001 µF
R3 — 10 Turns, 10 kΩ Beckman Instruments 8108
R4 — 1.8 kΩ, 1/2 W
Z1 — 1.4″ x 0.166″ Microstrip
Z2 — 1.1″ x 0.166″ Microstrip
Z3 — 0.95″ x 0.166″ Microstrip
Z4 — 2.2″ x 0.166″ Microstrip
Z5 — 0.85″ x 0.166″ Microstrip
Board — Glass Teflon, 62 mils
C11 — 10 µF, 50 V
C12, C13 — 680 pF Feedthru
D1 — 1N5925A Motorola Zener
L1 — 6 Turns, 1/4″ ID, #20 AWG Enamel
L2 — Ferroxcube VK–200 — 19/4B
R1 — 68 Ω, 1.0 W Thin Film
Figure 14. 400 MHz Test Circuit
4 00
V
D D
=
2 8 V, = I 5 0 mA , = P 5 . 0
W
D
Q
o
u
t
f
Z {
O h ms
Z *
O L
O h ms
i
n
Z
=
Ω
5
0
o
22 5
15 0
f
M
H
z
Z
{
i
n
1 00
1 50
2 25
4 00
2
1
.
2
-
-
-
-
j
2
5
.
4
2
0
.
1
-
-
-
-
j4 6 . 7
j3 8 . 2
j3 3 . 5
j2 6 . 9
1 4. 6
ă 9. 1
ă 6. 4
j2 2 . 11 9. 2
j1 8 . 81 7. 5
j1 0 . 81 6. 9
40 0
Z
=
1
0
0
M
H
z
22 5
15 0
{6 8 Ω S hu n t Re sist o r G a te - t o- G r ou n d
Z
Z
Z
*
O L
*
O L
*
O L
=
Co n ju ga t e o f t he o pt i mu m lo a d imp e d a n ce
i=n t o wh ich t he d evi ce o ut p ut o pe ra t e s a t
g=ive n o ut p u t p ow er, vo lt a ge a nd f re q ue n cy.
*
O L
a
f
=
1
0
0
M
H
z
Figure 15. Large–Signal Series Equivalent
Input/Output Impedances, Zin†, ZOL
*
REV 6
5
S
11
S
21
S
12
S
22
f
|S
|
φ
–1.0
–2.0
–5.0
–10
|S
|
φ
179
179
176
173
166
159
153
147
142
138
135
131
128
125
122
119
116
114
112
110
108
106
104
100
97
|S
|
φ
|S |
22
φ
–1.0
–2.0
–4.0
–9.0
–18
(MHz)
11
21
12
1.0
2.0
5.0
10
0.989
0.989
0.988
0.985
0.977
0.965
0.950
0.931
0.912
0.892
0.874
0.855
0.833
0.827
0.821
0.814
0.808
0.802
0.788
0.774
0.763
0.751
0.740
0.719
0.704
0.687
0.673
0.668
0.669
0.662
0.654
0.650
0.638
0.614
0.641
0.638
0.633
0.628
0.625
11.27
11.27
11.26
11.20
10.99
10.66
10.25
9.777
9.359
8.960
8.583
8.190
7.808
7.661
7.515
7.368
7.222
7.075
6.810
6.540
6.220
5.903
5.784
5.334
4.904
4.551
4.219
3.978
3.737
3.519
3.325
3.170
3.048
2.898
2.833
2.709
2.574
2.481
2.408
0.0014
0.0028
0.0069
0.014
0.027
0.039
0.051
0.060
0.069
0.077
0.085
0.091
0.096
0.101
0.107
0.113
0.119
0.125
0.127
0.128
0.130
0.132
0.134
0.136
0.139
0.141
0.141
0.142
0.142
0.143
0.142
0.140
0.141
0.136
0.136
0.135
0.133
0.131
0.129
89
0.954
0.954
0.954
0.951
0.938
0.918
0.895
0.867
0.846
0.828
0.815
0.801
0.785
0.784
0.784
0.784
0.783
0.783
0.780
0.774
0.762
0.760
0.758
0.757
0.758
0.757
0.750
0.757
0.766
0.768
0.772
0.772
0.783
0.786
0.795
0.801
0.802
0.805
0.814
89
86
83
76
69
63
57
53
49
46
43
40
38
36
34
32
31
30
28
26
24
23
20
19
16
14
12
10
9.0
8.0
7.0
6.0
6.0
5.0
5.0
4.0
5.0
5.0
20
–20
30
–30
–26
40
–39
–34
50
–47
–42
60
–53
–49
70
–58
–56
80
–62
–62
90
–66
–68
100
110
120
130
140
150
160
170
180
190
200
225
250
275
300
325
350
375
400
425
450
475
500
525
550
575
600
–70
–74
–73
–77
–76
–82
–79
–85
–82
–88
–86
–90
–89
–92
–92
–94
–94
–98
–97
–100
–103
–107
–110
–114
–117
–120
–121
–123
–124
–125
–125
–126
–127
–127
–128
–128
–100
–104
–108
–113
–117
–120
–123
–125
–127
–129
–131
–132
–133
–135
–137
–138
–140
92
89
86
83
80
77
75
72
71
68
66
64
62
60
–128
The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port.
The scattering parameters were measured on the MRF134 device alone with no external components.
(continued)
Table 1. Common Source Scattering Parameters
V
DS = 28 V, ID = 100 mA
REV 6
6
S
11
S
21
S
12
S
22
f
|S
|
φ
|S
|
φ
|S
|
φ
5.0
6.0
7.0
8.0
9.0
11
|S |
22
φ
(MHz)
11
21
12
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
0.619
0.617
0.618
0.619
0.618
0.614
0.609
0.562
0.587
0.593
0.597
0.598
0.592
0.588
0.586
0.590
–142
–144
–146
–147
–150
–152
–154
–155
–156
–158
–160
–162
–164
–166
–168
–171
2.334
2.259
2.192
2.124
2.061
1.983
1.908
1.877
1.869
1.794
1.749
1.700
1.641
1.590
1.572
1.551
58
0.128
0.125
0.123
0.122
0.120
0.118
0.119
0.118
0.119
0.118
0.119
0.118
0.115
0.112
0.108
0.107
0.818
0.824
0.834
0.851
0.859
0.857
0.865
0.872
0.869
0.875
0.881
0.889
0.888
0.877
0.864
0.863
–129
–130
–130
–131
–132
–133
–133
–133
–134
–135
–135
–136
–138
–138
–137
–137
56
55
53
51
49
48
49
46
44
43
41
40
39
39
37
13
15
16
18
18
18
18
20
23
28
The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port. The scattering parameters were
measurd on the MRF134 device alone with no external components.
Table 1. Common Source Scattering Parameters (continued)
VDS = 28 V, ID = 100 mA
REV 6
7
+ āj 50
+ ā9 0 °
+
ā
0
°
+ 1 20°
+ āj 25
+ āj 10 0
+ āj 15 0
+ āj 25 0
+ āj 5 00
S
12
+
1
5
0
°
+ ā3 0 °
+ āj 1 0
1 50
1 00
2 00
3 00
5 0
f
=
MH z
1 00 0
. 20
5 00
. 18 . 16 . 14 . 12 . 10 . 08 . 06 . 04 . 02
1 0
2
5
50
10 0 15 0 25 0 50 0
0
1
8
0
°
0°
f
=
10 00 M Hz
- āj 50 0
- āj 25 0
- āj 15 0
- āj 10
5 00
4 00
30 0
- ā3 0 °
- 1 50°
2
0
0
50
15 0
10 0
- āj 10 0
- āj 25
-
ā
0
°
-
1
2
0
°
-
ā
0
°
-
ā
5
0
Figure 16. S11, Input Reflection Coefficient
versus Frequency
Figure 17. S12, Reverse Transmission Coefficient
versus Frequency
VDS = 28 V ID = 100 mA
VDS = 28 V ID = 100 mA
+
ā
5
0
+
ā
0
°
+
ā
0
°
+ 1 20°
1 00
+
ā
2
5
+
ā
1
0
0
1
5
0
+ āj1 50
+ā j2 50
+ā j5 00
2
0
0
+
1
5
0
°
+
ā
0
°
f
=
5
0
M
H
z
30 0
40 0
+
ā
1
0
S
2 1
5
0
0
.
1
0
1
0
0
0
9
.
0
8
.
0
7
.
0
6
.
0
5
.
0
4
.
0
3
.
0
2
.
0
1
.
0
10
2
5
5
0
1
0
0
1
5
0
2
5
0
5
0
0
1
8
0
°
0
°
0
-ā j5 00
-ā j2 50
- āj1 50
-
ā
1
0
-
ā
0
°
f
=
1
0
0
0
M
H
z
-
1
5
0
°
S
2
2
5 0
- āj1 0 0
5
0
0
3
0
0
2
0
0
8
0
1 50 1 00
- āj5 0
- ā60 °
- āj2 5
- 12 0°
-
ā
0
°
Figure 18. S21, Forward Transmission Coefficient
versus Frequency
Figure 19. S22, Output Reflection Coefficient
versus Frequency
V
DS = 28 V ID = 100 mA
VDS = 28 V ID = 100 mA
REV 6
8
DESIGN CONSIDERATIONS
GAIN CONTROL
The MRF134 is a RF power N–Channel enhancement
mode field–effect transistor (FET) designed especially for
VHF power amplifier and oscillator applications. M/A-COM RF
MOS FETs feature a vertical structure with a planar design,
thus avoiding the processing difficulties associated with
V–groove vertical power FETs.
Power output of the MRF134 may be controlled from its
rated value down to zero (negative gain) by varying the dc gate
voltage. This feature facilitates the design of manual gain
control, AGC/ALC and modulation systems. (See Figure 8.)
M/A-COM Application Note AN–211A, FETs in Theory and
Practice, is suggested reading for those not familiar with the
construction and characteristics of FETs.
The major advantages of RF power FETs include high gain,
low noise, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely
mismatched loads without suffering damage. Power output
can be varied over a wide range with a low power dc control
signal, thus facilitating manual gain control, ALC and modula-
tion.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar VHF transistors are suitable for MRF134. See
M/A-COM Application Note AN721, Impedance Matching
Networks Applied to RF Power Transistors. The higher input
impedance of RF MOS FETs helps ease the task of broadband
network design. Both small signal scattering parameters and
large signal impedances are provided. While the s–parame-
ters will not produce an exact design solution for high power
operation, they do yield a good first approximation. This is an
additional advantage of RF MOS power FETs.
DC BIAS
The MRF134 is an enhancement mode FET and, therefore,
does not conduct when drain voltage is applied. Drain current
flows when a positive voltage is applied to the gate. See Figure
9 for a typical plot of drain current versus gate voltage. RF
power FETs require forward bias for optimum performance.
The value of quiescent drain current (IDQ) is not critical for
RF power FETs are triode devices and, therefore, not
unilateral. This, coupled with the very high gain of the
MRF134, yields a device capable of self oscillation. Stability
may be achieved by techniques such as drain loading, input
shunt resistive loading, or output to input feedback. The
MRF134 was characterized with a 68–ohm input shunt
loading resistor. Two port parameter stability analysis with the
MRF134 s–parameters provides a useful–tool for selection of
loading or feedback circuitry to assure stable operation. See
MA-COM Application Note AN215A for a discussion of two port
network theory and stability.
many applications. The MRF134 was characterized at IDQ
=
50 mA, which is the suggested minimum value of IDQ. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current.
Therefore, the gate bias circuit may generally be just a simple
resistive divider network. Some special applications may
require a more elaborate bias system.
Input resistive loading is not feasible in low noise applica-
tions. The MRF134 noise figure data was generated in a circuit
with drain loading and a low loss input network.
REV 6
9
PACKAGE DIMENSIONS
A
U
N O TE S :
1. D I MEN S I ON I N G A ND TO LE R AN C I N G P ER A NS I
M
Y 14. 5M, 198 2.
2. C O N TR O LL IN G D I MEN S I ON : I N CH .
M
1
Q
INCHES
DIM MIN MAX
MILLIMETERS
MIN
24. 39
9. 40
5. 82
5. 47
2. 16
3. 81
0. 11
MAX
25. 14
9. 90
7. 13
5. 96
2. 66
4. 57
0. 15
10. 28
50ꢀ ꢀ
4
A
B
C
D
E
H
J
0. 960
0. 370
0. 229
0. 215
0. 085
0. 150
0. 004
0. 395
40ꢀ ꢀ
0. 990
0. 390
0. 281
0. 235
0. 105
0. 108
0. 006
0. 405
50ꢀ ꢀ
B
R
2
3
D
K
M
Q
R
S
U
10. 04
40ꢀ ꢀ
S
K
_
_
_
_
0. 113
0. 245
0. 790
0. 720
0. 130
0. 255
0. 810
0. 730
2. 88
6. 23
3. 30
6. 47
20. 07
18. 29
20. 57
18. 54
S TY LE 2:
P IN 1. S OU R C E
J
2 . G AT E
3. S OU R C E
4. D R AI N
C
H
E
SEATING
PLANE
CASE 211–07
ISSUE N
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 6
10
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