MRF151G [TE]
N-CHANNEL BROADBAND RF POWER MOSFET; N沟道宽带射频功率MOSFET
| 型号： | MRF151G |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | N-CHANNEL BROADBAND RF POWER MOSFET |
| 文件： | 总9页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MRF151G/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode MOSFET
Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.
•
Guaranteed Performance at 175 MHz, 50 V:
Output Power — 300 W
Gain — 14 dB (16 dB Typ)
Efficiency — 50%
300 W, 50 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
•
•
•
Low Thermal Resistance — 0.35°C/W
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
D
G
G
S
(FLANGE)
CASE 375–04, STYLE 2
D
MAXIMUM RATINGS
Rating
Symbol
Value
125
125
±40
40
Unit
Vdc
Vdc
Vdc
Adc
Drain–Source Voltage
Drain–Gate Voltage
V
DSS
V
DGO
Gate–Source Voltage
Drain Current — Continuous
V
GS
I
D
Total Device Dissipation @ T = 25°C
P
D
500
Watts
C
Derate above 25°C
2.85
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
T
–65 to +150
200
°C
°C
stg
T
J
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
0.35
°C/W
θ
JC
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (Each Side)
Drain–Source Breakdown Voltage (V = 0, I = 100 mA)
V
(BR)DSS
125
—
—
—
—
—
Vdc
mAdc
µAdc
GS
D
Zero Gate Voltage Drain Current (V = 50 V, V = 0)
I
5.0
1.0
DS
GS
DSS
GSS
Gate–Body Leakage Current (V = 20 V, V = 0)
I
—
GS
DS
ON CHARACTERISTICS (Each Side)
Gate Threshold Voltage (V = 10 V, I = 100 mA)
V
1.0
1.0
5.0
3.0
3.0
7.0
5.0
5.0
—
Vdc
Vdc
DS
D
GS(th)
Drain–Source On–Voltage (V = 10 V, I = 10 A)
V
DS(on)
GS
D
Forward Transconductance (V = 10 V, I = 5.0 A)
g
fs
mhos
DS
D
DYNAMIC CHARACTERISTICS (Each Side)
Input Capacitance (V = 50 V, V = 0, f = 1.0 MHz)
C
—
—
—
350
220
15
—
—
—
pF
pF
pF
DS
GS
iss
Output Capacitance (V = 50 V, V = 0, f = 1.0 MHz)
C
oss
DS
GS
Reverse Transfer Capacitance (V = 50 V, V = 0, f = 1.0 MHz)
C
rss
DS
GS
FUNCTIONAL TESTS
Common Source Amplifier Power Gain
G
14
50
16
55
—
—
dB
%
ps
(V = 50 V, P = 300 W, I = 500 mA, f = 175 MHz)
DD
out
DQ
Drain Efficiency
η
(V = 50 V, P = 300 W, f = 175 MHz, I (Max) = 11 A)
DD
out
D
Load Mismatch
ψ
(V = 50 V, P = 300 W, I = 500 mA,
No Degradation in Output Power
DD
out
DQ
VSWR 5:1 at all Phase Angles)
R1
L2
+
+
C4
C5
C9 C10
50 V
–
BIAS 0–6 V
–
C11
C12
L1
D.U.T.
T2
R2
C1
OUTPUT
T1
INPUT
C6
C2
C3
C7
C8
R1 — 100 Ohms, 1/2 W
R2 — 1.0 kOhm, 1/2 W
C1 — Arco 424
C2 — Arco 404
C3, C4, C7, C8, C9 — 1000 pF Chip
C5, C10 — 0.1 µF Chip
C6 — 330 pF Chip
C11 — 0.47 µF Ceramic Chip, Kemet 1215 or
C11 — Equivalent (100 V)
T1 — 9:1 RF Transformer. Can be made of 15–18 Ohms
T1 — Semirigid Co–Ax, 62–90 Mils O.D.
T2 — 1:4 RF Transformer. Can be made of 16–18 Ohms
T2 — Semirigid Co–Ax, 70–90 Mils O.D.
Board Material — 0.062″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides, ε = 5.0
r
C12 — Arco 422
L1 — 10 Turns AWG #18 Enameled Wire,
L1 — Close Wound, 1/4″ I.D.
L2 — Ferrite Beads of Suitable Material for
L2 — 1.5–2.0 µH Total Inductance
NOTE: For stability, the input transformer T1 must be loaded
NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.
Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or
Equivalent.
See Figure 6 for construction details of T1 and T2.
Figure 1. 175 MHz Test Circuit
REV 9
2
TYPICAL CHARACTERISTICS
1000
500
2000
V
DS
= 30 V
C
iss
200
100
C
oss
1000
15 V
50
C
rss
20
0
0
0
10
20
30
40
50
0
2
4
6
8
10
12
14
16
18
20
V , DRAIN–SOURCE VOLTAGE (VOLTS)
DS
I , DRAIN CURRENT (AMPS)
D
Figure 2. Capacitance versus
Drain–Source Voltage*
Figure 3. Common Source Unity Gain Frequency
versus Drain Current*
*Data shown applies to each half of MRF151G.
1.04
1.03
1.02
1.01
1
100
I = 5 A
D
4 A
0.99
0.98
0.97
0.96
0.95
0.94
0.93
0.92
0.91
0.9
T = 25°C
C
2 A
1 A
10
250 mA
50
100 mA
75
1
–25
0
25
100
2
20
200
T , CASE TEMPERATURE (°C)
C
V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS
Figure 4. Gate–Source Voltage versus
Case Temperature*
Figure 5. DC Safe Operating Area
9:1
CENTER
IMPEDANCE
RATIO
HIGH IMPEDANCE
TAP
WINDINGS
CENTER
TAP
CONNECTIONS
TO LOW IMPEDANCE
WINDINGS
4:1
IMPEDANCE
RATIO
Figure 6. RF Transformer
REV 9
3
TYPICAL CHARACTERISTICS
30
350
300
250
200
150
175 MHz
f = 150 MHz
200 MHz
25
20
15
10
5
V
DD
= 50 V
I
DQ
= 2 x 250 mA
V
I
DQ
= 50 V
= 2 x 250 mA
100
50
0
DD
P
out
= 150 W
2
5
10
30
100
200
0
5
10
f, FREQUENCY (MHz)
P , INPUT POWER (WATTS)
in
Figure 7. Output Power versus Input Power
Figure 8. Power Gain versus Frequency
f = 175 MHz
150
125
INPUT, Z
(GATE TO GATE)
in
100
Z = 10 Ω
o
30
150
125
100
f = 175 MHz
OUTPUT, Z
(DRAIN TO DRAIN)
*
OL
30
Z * = Conjugate of the optimum load impedance
OL
Z * = into which the device output operates at a
OL
Z * = given output power, voltage and frequency.
OL
Figure 9. Input and Output Impedance
REV 9
4
NOTE: S–Parameter data represents measurements taken from one chip only.
Table 1. Common Source S–Parameters (VDS = 50 V, ID = 2 A)
S
11
S
21
S
12
S
22
f
MHz
|S
|
φ
–174
–175
–175
–176
–176
–177
–177
–177
–178
–178
–179
–179
–180
–180
180
|S
|
φ
|S
|
φ
|S |
22
φ
–169
–172
–171
–171
–172
–171
–171
–173
–175
–173
–172
–174
–175
–176
–177
–176
–178
–179
–180
180
11
21
12
30
0.877
0.886
0.895
0.902
0.912
0.918
0.925
0.932
0.936
0.942
0.946
0.950
0.954
0.957
0.960
0.962
0.964
0.967
0.967
0.969
0.971
0.970
0.972
0.973
0.972
0.974
0.974
0.975
0.976
0.974
0.975
0.976
0.975
0.977
0.976
0.976
0.977
0.976
0.976
0.977
10.10
7.47
5.76
4.73
3.86
3.19
2.69
2.34
2.06
1.77
1.55
1.39
1.23
1.13
1.01
0.90
0.84
0.75
0.71
0.67
0.60
0.57
0.51
0.47
0.45
0.41
0.40
0.39
0.36
0.33
0.31
0.30
0.29
0.28
0.26
0.26
0.24
0.23
0.22
0.21
77
0.008
0.009
0.008
0.009
0.009
0.010
0.011
0.013
0.014
0.015
0.017
0.019
0.021
0.023
0.024
0.026
0.028
0.030
0.032
0.035
0.038
0.037
0.039
0.041
0.044
0.046
0.046
0.048
0.049
0.053
0.056
0.056
0.058
0.059
0.061
0.065
0.066
0.068
0.071
0.071
19
0.707
0.715
0.756
0.764
0.784
0.802
0.808
0.850
0.865
0.875
0.874
0.884
0.909
0.911
0.904
0.931
0.929
0.922
0.937
0.949
0.950
0.950
0.935
0.954
0.953
0.965
0.944
0.929
0.943
0.954
0.935
0.948
0.950
0.978
0.981
0.944
0.960
0.955
0.999
0.962
40
69
63
58
52
48
45
40
37
35
32
30
27
24
22
20
19
18
16
14
12
12
12
11
9
24
33
39
46
54
62
67
72
76
77
77
78
79
82
82
80
79
80
82
81
80
80
79
80
80
79
82
82
78
78
77
80
79
76
75
76
80
77
76
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
270
280
290
300
310
320
330
340
350
360
370
380
390
400
410
420
179
179
179
178
178
178
179
177
179
177
179
177
178
176
176
176
9
175
176
6
175
176
10
9
176
175
176
175
7
173
174
4
172
174
10
7
172
174
174
174
8
172
173
8
170
173
7
171
173
10
7
171
172
173
172
9
170
172
9
168
REV 9
5
Table 1. Common Source S–Parameters (VDS = 50 V, ID = 2 A) continued
S
11
S
21
S
12
S
22
f
MHz
|S
|
φ
171
171
171
170
170
170
169
169
|S
|
φ
|S
|
φ
|S |
22
φ
168
168
168
165
168
167
165
165
11
21
12
430
440
450
460
470
480
490
500
0.976
0.976
0.978
0.978
0.978
0.974
0.973
0.972
0.19
0.20
0.19
0.18
0.18
0.18
0.17
0.17
10
0.073
0.075
0.080
0.082
0.081
0.085
0.086
0.089
76
0.950
0.953
0.982
0.990
0.953
0.944
0.966
0.980
12
10
13
10
13
13
14
75
77
74
77
78
75
73
Table 2. Common Source S–Parameters (VDS = 50 V, ID = 0.38 A)
S
11
S
21
S
12
S
22
f
MHz
|S
|
φ
–168
–169
–170
–171
–172
–173
–173
–174
–174
–175
–175
–176
–177
–177
–178
–178
–178
–179
–179
–179
–180
180
|S
|
φ
|S
|
φ
–10
–19
–24
–24
–20
–16
–14
–15
–17
–10
4
|S |
22
φ
11
21
12
30
0.834
0.869
0.883
0.892
0.901
0.911
0.924
0.935
0.945
0.953
0.958
0.962
0.964
0.966
0.969
0.972
0.975
0.977
0.979
0.980
0.980
0.981
0.982
0.983
0.984
0.984
0.984
0.984
0.984
0.985
0.985
9.70
6.47
5.13
4.03
3.39
2.80
2.39
1.99
1.67
1.36
1.14
1.01
0.93
0.85
0.79
0.74
0.65
0.56
0.50
0.44
0.41
0.38
0.38
0.34
0.34
0.30
0.27
0.25
0.24
0.23
0.20
74
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.006
0.005
0.004
0.004
0.004
0.004
0.004
0.005
0.006
0.007
0.008
0.008
0.008
0.009
0.009
0.011
0.014
0.014
0.013
0.012
0.014
0.017
0.019
0.019
0.747
0.731
0.754
0.823
0.912
0.996
1.100
1.100
1.070
0.988
0.934
0.935
0.983
1.080
1.170
1.250
1.210
1.110
1.010
0.958
1.020
1.020
1.060
1.180
1.220
1.180
1.040
0.996
0.951
0.964
1.060
–162
–159
–161
–164
–167
–168
–167
–167
–169
–167
–169
–170
–172
–173
–173
–173
–174
–174
–174
–172
–175
–178
–176
–179
–180
–179
–177
–178
–178
179
40
62
55
51
50
47
42
35
29
25
23
23
24
24
21
17
10
8
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
270
280
290
300
310
320
330
26
45
58
61
57
56
63
7
72
9
81
9
79
12
11
8
74
180
74
179
76
179
4
80
179
3
79
178
–4
0
73
178
69
178
4
74
177
7
83
177
3
90
180
REV 9
6
Table 2. Common Source S–Parameters (VDS = 50 V, ID = 0.38 A) continued
S
11
S
21
S
12
S
22
f
MHz
|S
|
φ
177
177
176
176
176
176
175
175
175
174
174
174
174
174
173
173
173
|S
|
φ
|S
|
φ
|S |
22
φ
179
–180
180
180
–180
–180
–180
179
177
177
177
178
176
177
179
178
177
11
21
12
340
350
360
370
380
390
400
410
420
430
440
450
460
470
480
490
500
0.986
0.986
0.986
0.985
0.985
0.985
0.985
0.985
0.986
0.986
0.986
0.985
0.984
0.984
0.985
0.986
0.986
0.22
0.20
0.19
0.17
0.16
0.15
0.14
0.14
0.13
0.13
0.13
0.13
0.11
7
5
0.017
0.017
0.021
0.024
0.024
0.021
0.018
0.021
0.027
0.031
0.030
0.025
0.022
0.025
0.034
0.038
0.035
87
1.100
1.140
1.160
1.100
1.070
0.993
0.962
1.040
1.060
1.100
1.140
1.110
1.090
1.020
0.993
1.020
1.010
76
67
69
77
85
85
72
68
73
81
87
68
59
66
79
93
–2
–3
–3
0
3
2
5
4
0
–1
–2
–1
3
0.10
0.10
0.10
0.10
1
6
REV 9
7
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES
cuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protec-
tion is required, an external zener diode is recommended.
Using a resistor to keep the gate–to–source impedance
low also helps damp transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate–drain capacitance. If the
gate–to–source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate–threshold voltage
and turn the device on.
The physical structure of a MOSFET results in capacitors
between the terminals. The metal anode gate structure de-
termines the capacitors from gate–to–drain (Cgd), and gate–
to–source (Cgs). The PN junction formed during the
fabrication of the RF MOSFET results in a junction capaci-
tance from drain–to–source (Cds).
These capacitances are characterized as input (Ciss), out-
put (Coss) and reverse transfer (Crss) capacitances on data
sheets. The relationships between the inter–terminal capaci-
tances and those given on data sheets are shown below. The
C
iss can be specified in two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positivevoltageofthedraininrespecttosourceandzero
volts at the gate. In the latter case the numbers are lower.
However, neither method represents the actual operat-
ing conditions in RF applications.
HANDLING CONSIDERATIONS
When shipping, the devices should be transported only in
antistatic bags or conductive foam. Upon removal from the
packaging, careful handling procedures should be adhered
to. Those handling the devices should wear grounding straps
and devices not in the antistatic packaging should be kept in
metal tote bins. MOSFETs should be handled by the case
and not by the leads, and when testing the device, all leads
should make good electrical contact before voltage is ap-
plied. As a final note, when placing the FET into the system it
is designed for, soldering should be done with a grounded
iron.
DRAIN
C
gd
GATE
C
= C = C
iss
gd
gs
C
ds
C
= C = C
ds
oss
gd
C
rss
= C
gd
C
gs
SOURCE
DESIGN CONSIDERATIONS
LINEARITY AND GAIN CHARACTERISTICS
The MRF151G is an RF Power, MOS, N–channel en-
hancement mode field–effect transistor (FET) designed for
HF and VHF power amplifier applications.
M/A-COM Application Note AN211A, FETs in Theory and
Practice, is suggested reading for those not familiar with the
construction and characteristics of FETs.
The major advantages of RF power MOSFETs include
high gain, low noise, simple bias systems, relative immunity
from thermal runaway, and the ability to withstand severely
mismatched loads without suffering damage. Power output
can be varied over a wide range with a low power dc control
signal.
In addition to the typical IMD and power gain data pres-
ented, Figure 3 may give the designer additional information
on the capabilities of this device. The graph represents the
small signal unity current gain frequency at a given drain cur-
rent level. This is equivalent to fT for bipolar transistors.
Since this test is performed at a fast sweep speed, heating of
the device does not occur. Thus, in normal use, the higher
temperatures may degrade these characteristics to some ex-
tent.
DRAIN CHARACTERISTICS
One figure of merit for a FET is its static resistance in the
full–on condition. This on–resistance, VDS(on), occurs in the
linear region of the output characteristic and is specified un-
der specific test conditions for gate–source voltage and drain
current. For MOSFETs, VDS(on) has a positive temperature
coefficient and constitutes an important design consideration
at high temperatures, because it contributes to the power
dissipation within the device.
DC BIAS
The MRF151G is an enhancement mode FET and, there-
fore, does not conduct when drain voltage is applied. Drain
current flows when a positive voltage is applied to the gate.
RF power FETs require forward bias for optimum perfor-
mance. The value of quiescent drain current (IDQ) is not criti-
cal for many applications. The MRF151G was characterized
at IDQ = 250 mA, each side, which is the suggested minimum
value of IDQ. For special applications such as linear amplifi-
cation, IDQ may have to be selected to optimize the critical
parameters.
GATE CHARACTERISTICS
The gate of the MOSFET is a polysilicon material, and is
electrically isolated from the source by a layer of oxide. The
input resistance is very high — on the order of 109 ohms —
resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage
slightly in excess of the gate–to–source threshold voltage,
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may be just a simple resistive divid-
er network. Some applications may require a more elaborate
bias system.
VGS(th)
.
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open–cir-
GAIN CONTROL
Power output of the MRF151G may be controlled from its
rated value down to zero (negative gain) by varying the dc
gate voltage. This feature facilitates the design of manual
gain control, AGC/ALC and modulation systems.
REV 9
8
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
U
G
Q RADIUS 2 PL
M
M
M
0.25 (0.010)
T A
B
1
2
4
INCHES
DIM MIN MAX
1.350 33.79
MILLIMETERS
MIN
MAX
34.29
10.41
5.84
A
B
C
D
E
1.330
0.370
0.190
0.215
0.050
0.430
0.102
0.004
0.185
0.845
0.060
0.390
–B–
R
0.410
0.230
0.235
0.070
9.40
4.83
5.47
1.27
5
5.96
1.77
11.18
2.84
0.15
5.33
22.23
1.78
3
K
G
H
J
K
N
Q
R
U
0.440 10.92
0.112
0.006
0.215
2.59
0.11
4.83
D
0.875 21.46
0.070
0.410
1.52
9.91
J
N
10.41
E
1.100 BSC
27.94 BSC
H
STYLE 2:
PIN 1. DRAIN
SEATING
PLANE
–T–
2. DRAIN
3. GATE
4. GATE
–A–
C
5. SOURCE
CASE 375–04
ISSUE D
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 9
9
相关型号：
MRF1535NT1_08
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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