MRF392 [TE]
Tthe RF Line NPN Silicon Push-Pull RF Power Transistor; 里边反射频线NPN硅推挽式RF功率晶体管
| 型号： | MRF392 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Tthe RF Line NPN Silicon Push-Pull RF Power Transistor |
| 文件： | 总4页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
SEMICONDUCTOR TECHNICAL DATA
by MRF392/D
The RF Line
Designed primarily for wideband large–signal output and driver amplifier
stages in the 30 to 500 MHz frequency range.
•
Specified 28 Volt, 400 MHz Characteristics —
Output Power = 125 W
125 W, 30 to 500 MHz
Typical Gain = 10 dB
Efficiency = 55% (Typ)
CONTROLLED “Q”
BROADBAND PUSH–PULL
RF POWER TRANSISTOR
NPN SILICON
•
•
•
•
Built–In Input Impedance Matching Networks for Broadband Operation
Push–Pull Configuration Reduces Even Numbered Harmonics
Gold Metallization System for High Reliability
100% Tested for Load Mismatch
2
6
5, 8
1, 4
3
7
CASE 744A–01, STYLE 1
The MRF392 is two transistors in a single package with separate base and collector leads
and emitters common. This arrangement provides the designer with a space saving
device capable of operation in a push–pull configuration.
PUSH–PULL TRANSISTORS
MAXIMUM RATINGS
Rating
Symbol
Value
30
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V
CEO
V
CBO
V
EBO
60
4.0
16
I
C
Total Device Dissipation @ T = 25°C (1)
Derate above 25°C
P
D
270
1.54
Watts
W/°C
C
Storage Temperature Range
Junction Temperature
T
–65 to +150
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
NOTE:
Symbol
Max
Unit
R
0.65
°C/W
θJC
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull
amplifier.
REV 8
1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Breakdown Voltage (I = 50 mAdc, I = 0)
V
(BR)CEO
30
60
4.0
—
—
—
—
—
—
—
Vdc
Vdc
C
B
Collector–Emitter Breakdown Voltage (I = 50 mAdc, V
= 0)
V
C
BE
(BR)CES
(BR)EBO
Emitter–Base Breakdown Voltage (I = 5.0 mAdc, I = 0)
V
—
Vdc
E
C
Collector Cutoff Current (V
CB
= 30 Vdc, I = 0)
I
5.0
mAdc
E
CBO
ON CHARACTERISTICS (1)
DC Current Gain (I = 1.0 Adc, V
CE
= 5.0 Vdc)
h
40
—
60
75
100
95
—
C
FE
DYNAMIC CHARACTERISTICS (1)
Output Capacitance (V
CB
= 28 Vdc, I = 0, f = 1.0 MHz)
C
pF
E
ob
pe
FUNCTIONAL TESTS (2) — See Figure 1
Common–Emitter Amplifier Power Gain
G
8.0
50
10
55
—
—
dB
%
(V
CC
= 28 Vdc, P
= 125 W, f = 400 MHz)
= 125 W, f = 400 MHz)
= 125 W, f = 400 MHz,
out
out
out
Collector Efficiency
(V = 28 Vdc, P
η
CC
Load Mismatch
(V = 28 Vdc, P
ψ
No Degradation in Output Power
CC
VSWR = 30:1, all phase angles)
NOTES:
1. Each transistor chip measured separately.
2. Both transistor chips operating in push–pull amplifier.
L5
+ 28 V
–
+
C13
C11
C12
C14
C15
B2
L3
B1
L1
C9
C1
C2
Z4
Z5
Z6
Z1
Z1
Z2
Z3
C3
C4
Z2
C5
Z3
C6
C7
C8
Z4
Z5
Z6
C10
D.U.T.
L2
L4
L6
C18
C16
C17
C19
C1, C2 — 240 pF, 100 Mil Chip Cap (ATC) or Equivalent
C3 — 3.6 pF, 100 Mil Chip Cap (ATC) or Equivalent
C4, C8 — 8.2 pF, 100 Mil Chip Cap (ATC) or Equivalent
C5, C6 — 20 pF, 100 Mil Chip Cap (ATC) or Equivalent
C7 — 18 pF, Mini Unelco or Equivalent
C9, C10 — 270 pF, 100 Mil Chip Cap (ATC) or Equivalent
C11, C12, C16, C17 — 470 pF 100 Mil Chip Cap (ATC) or Equivalent
C13, C18 — 680 pF Feedthru
B1 — Balun, 50 Ω Semi–Rigid Coaxial Cable 86 Mil OD, 2″ L
B2 — Balun, 50 Ω Semi–Rigid Coaxial Cable 86 Mil OD, 2″ L
Z1 — Microstrip Line 270 Mil L x 125 Mil W
Z2 — Microstrip Line 375 Mil L x 125 Mil W
Z3 — Microstrip Line 280 Mil L x 125 Mil W
Z4 — Microstrip Line 300 Mil L x 125 Mil W
Z5 — Microstrip Line 350 Mil L x 125 Mil W
Z6 — Microstrip Line 365 Mil L x 125 Mil W
C14, C19 — 0.1 µF Erie Redcap or Equivalent
C15 — 20 µF, 50 V
Board Material — 0.0625″ Teflon Fiberglass ε = 2.5 ± 0.05 1 oz. Cu.
r
Board Material — CLAD, Double Sided
L1, L2 — 0.15 µH Molded Choke With Ferrite Bead
L3, L4 — 2–1/2 Turns #20 AWG, 0.200 ID
L5, L6 — 3–1/2 Turns #18 AWG, 0.200 ID
Figure 1. 400 MHz Test Fixture
REV 8
2
160
140
120
100
80
80
70
60
50
40
30
20
10
f = 100 MHz
225 MHz
f = 100 MHz
400 MHz
225 MHz
400 MHz
500 MHz
60
40
V
= 28 V
V
= 13.5 V
CC
CC
20
0
0
25
18
20
0
5
10
15
20
0
2
4
6
8
10
12
14
16
P
, INPUT POWER (WATTS)
P
, INPUT POWER (WATTS)
in
in
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Input Power
160
140
120
100
80
160
140
120
100
80
P
= 10 W
P
= 14 W
in
in
7 W
5 W
10 W
7 W
60
60
40
40
20
20
f = 225 MHz
f = 400 MHz
0
0
10
12
14
16
18
20
22
24
26
28
30
10
12
14
16
18
20
22
24
26
28
30
V
, SUPPLY VOLTAGE (VOLTS)
V , SUPPLY VOLTAGE (VOLTS)
CC
CC
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
Z
& Z * are given
OL
in
from base–to–base and
collector–to–collector respectively.
f = 100 MHz
225
500
500
Z
in
CAPACITIVE
REACTANCE
COMPONENT (–jX)
INDUCTIVE
REACTANCE
COMPONENT (+jX)
400
450
450
Z
*
OL
400
= 28 V, P
225
V
= 125 W
out
CC
f
Z
Z
*
OL
in
OHMS
f = 100 MHz
MHz
OHMS
100
225
400
450
500
0.72 + j0.44
0.72 + j2.62
3.88 + j5.72
3.84 + j2.8
1.26 + j3.01
9.0 – j6.0
5.2 – j1.8
3.6 + j0.53
3.2 + j1.2
3.0 + j2.0
Z
= 20 Ω
o
Z
Z
Z
* = Conjugate of the optimum load impedance
* = into which the device output operates at a
* = given output power, voltage and frequency.
OL
OL
OL
Figure 6. Series Equivalent Input/Output Impedance
REV 8
3
PACKAGE DIMENSIONS
U 4 PL
M
Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
M
M
M
0.76 (0.030)
A
B
K
–B–
K
1
2
3
4
MILLIMETERS
INCHES
DIM
A
B
C
D
E
MIN
22.60
9.52
6.65
1.60
2.94
2.87
MAX
23.11
10.03
7.16
1.95
3.40
MIN
MAX
0.910
0.395
0.282
0.077
0.134
0.127
0.890
0.375
0.262
0.063
0.116
0.113
R
F
3.22
5
6
7
8
G
H
J
K
L
16.51 BSC
0.650 BSC
4.01
0.07
4.36
0.15
0.158
0.003
0.171
0.490
0.172
0.006
0.193
0.510
D 4 PL
4.34
4.90
12.45
12.95
F
4 PL
2 PL
M
N
Q
R
U
V
45 NOM
45 NOM
1.051
3.04
9.90
1.02
0.64
11.02
3.35
10.41
1.27
0.414
0.120
0.390
0.040
0.025
0.434
0.132
0.410
0.050
0.035
V
L
0.89
G
–A–
STYLE 1:
PIN 1. EMITTER (COMMON)
2. COLLECTOR
3. COLLECTOR
J
N
4. EMITTER (COMMON)
5. EMITTER (COMMON)
6. BASE
7. BASE
8. EMITTER (COMMON)
C
H
E
SEATING
PLANE
–T–
CASE 744A–01
ISSUE C
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 8
4
相关型号：
©2020 ICPDF网 联系我们和版权申明