MRF429 [TE]
RF POWER TRANSISTOR NPN SILICON; RF功率晶体管NPN硅
| 型号： | MRF429 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | RF POWER TRANSISTOR NPN SILICON |
| 文件： | 总5页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF429/D
The RF Line
NP N S ilic on
M
R
F
4
2
9
R
F
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Designed primarily for high–voltage applications as a high–power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
•
Specified 50 Volt, 30 MHz Characteristics —
Output Power = 150 W (PEP)
Minimum Gain = 13 dB
150 W (LINEAR), 30 MHz
RF POWER
Efficiency = 45%
TRANSISTOR
•
Intermodulation Distortion @ 150 W (PEP) —
IMD = –32 dB (Max)
NPN SILICON
•
•
Diffused Emitter Resistors for Superior Ruggedness
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
@ 150 W CW
CASE 211–11, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
50
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
100
4.0
16
Collector Current — Continuous
Withstand Current — 10 s
I
C
—
20
Total Device Dissipation @ T = 25°C
P
D
233
Watts
C
Derate above 25°C
1.33
W/°C
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
0.75
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I = 200 mAdc, I = 0)
V
(BR)CEO
50
—
—
—
—
—
—
—
—
Vdc
Vdc
C
B
Collector–Emitter Breakdown Voltage (I = 100 mAdc, V = 0)
V
100
100
4.0
C
BE
(BR)CES
(BR)CBO
(BR)EBO
Collector–Base Breakdown Voltage (I = 100 mAdc, I = 0)
V
V
Vdc
C
E
Emitter–Base Breakdown Voltage (I = 10 mAdc, I = 0)
Vdc
E
C
(continued)
1
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 5.0 Adc, V = 5.0 Vdc)
h
FE
10
30
80
—
C
CE
DYNAMIC CHARACTERISTICS
Output Capacitance
C
—
220
15
300
—
pF
dB
ob
(V = 50 Vdc, I = 0, f = 1.0 MHz)
CB
E
FUNCTIONAL TESTS
Common–Emitter Amplifier Gain
G
13
PE
(V = 50 Vdc, P = 150 W (PEP), I (max) = 3.32 Adc,
CC
out
C
f = 30; 30.001 MHz)
Output Power
(V = 50 Vdc, f = 30; 30.001 MHz)
CE
P
150
45
—
—
—
—
W (PEP)
%
out
Collector Efficiency
η
(V = 50 Vdc, P = 150 W (PEP), I (max) = 3.32 Adc,
CC
out
C
f = 30, 30.001 MHz)
Intermodulation Distortion (1)
IMD
—
–35
–32
dB
(V = 50 Vdc, P = 150 W (PEP), I = 3.32 Adc)
CE
out
C
Electrical Ruggedness
(V = 50 Vdc, P = 150 W CW, f = 30 MHz,
ψ
No Degradation in Output Power
CC
out
VSWR 30:1 at all Phase Angles)
NOTE:
1. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
L5
R1
+
+
+
BIAS
-
CR1
5
ꢀ
Vdc
RF
C3
C4
C2
C8
C9
C10
-
L3
-
L2
DUT
L4
L1
OUTPUT
RF
INPUT
C6
R3
C5
C7
R2
C1
C1, C2, C7 — 170ā–ā780 pF, Arco 469
C3, C8, C9 — 0.1 µF, 100 V Erie
C4 — 500 µF @ 6.0 V
R2 — 10 Ω, 1.0 Watt
R3 — 5.0 – 3.3 Ω 1/2 Watt Carbon Resistors in Parallel
CR1 — 1N4997
C5 — 9.0ā–ā180 pF, Arco 463
C6 — 80ā–ā480 pF, Arco 466
C10 — 30 µF, 100 V
L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long
L2 — 10 µH Molded Choke
L3 — 12 Turns, #16 Enameled Wire Closewound, 1/4″ I.D.
L4 — 5 Turns, 1/8″ Copper Tubing, 9/16″ I.D., 3/4″ Long
L5 — 10 Ferrite Beads — Ferroxcube #56–590–65/3B
R1 — 10 Ω, 10 Watt
Figure 1. 30 MHz Test Circuit Schematic
2
250
200
150
100
50
250
200
150
100
50
f
I
ꢀ
=
ꢀ
30,
ꢀ
30.001
ꢀ
MHz
f
I
ꢀ
=
ꢀ
3
ꢀ
MHz
150 mA
ꢀ
=
ꢀ
150
d
ꢀ
mA
V
CC
ꢀ
=
ꢀ
50
ꢀ
V
CQ
ꢀ
=
ꢀ
ꢀ
CQ
IMD
ꢀ
=ꢀ
3
IMD
ꢀ
=
ꢀ
-ā3
ꢀ
dB
40
ꢀ
V
28
ꢀ
V
-ā3
ꢀ
dB
0
0
20
30
40
SUPPLY
50
60
0
1
0
2
4
6
POWER
8
10
100
14
V
,
ꢀ
ꢀ
VOLTAG
ꢀ
(VOLTS)
P ,
in
ꢀ
INPUT
ꢀ
ꢀ
(WATTS)
CC
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
30
25
20
15
350
300
250
f
I
ꢀ
=
ꢀ
30.000
150
ꢀ
MHz
mA
ꢀ
=
ꢀ
ꢀ
CQ
V
CC
ꢀ
=
ꢀ
5
ꢀ
V
200
150
100
V
CC
ꢀ
=
ꢀ
50
150
150
ꢀ
V
T
ꢀ
=
ꢀ
°C50
C
I ꢀ
CQ
=
ꢀ
ꢀ
mA
W
P ꢀ
out
=
ꢀ
ꢀ
10
0
100°C
30 50
OUTPUT VSWR
2
4
7
15
30
60
1
3
5
10
f
ꢀ
FREQUENCY
ꢀ
(MHz)
ꢀ
Figure 4. Power Gain versus Frequency
Figure 5. RF Safe Operating Area (SOAR)
250
200
150
100
50
-ā25
-ā30
-ā35
-ā40
-ā45
-ā50
V
CC
ꢀ
=
ꢀ
3
ꢀ
V
V
CC
ꢀ
=
ꢀ
30,
5
ꢀ
30.001
V
f
ꢀ
=
ꢀ
ꢀ
ꢀ
MHz
15
ꢀ
V
d
3
d
5
0
5
10
(AMPS)
0
20
40
60
80
100
120
(WATTS
140
PEP)
160
I ,
C
ꢀ
COLLECTO
ꢀ
CURRENT
ꢀ
P
out
,
ꢀ
OUTPUT
ꢀ
POWER
ꢀ
ꢀ
Figure 6. fT versus Collector Current
Figure 7. IMD versus Pout
3
5000
4000
3000
2000
20
16
12
V
ꢀ
=
ꢀ
5
ꢀ
150
V
V
ꢀ
=
ꢀ
5
ꢀ
150
V
CC
CC
I ꢀ
CQ
=
ꢀ
ꢀ
mA
ꢀ
I ꢀ
CQ
=
ꢀ
ꢀ
mA
ꢀ
P ꢀ
out
=
ꢀ
150
ꢀ
W
PEP
P ꢀ
out
=
ꢀ
150
ꢀ
W
PEP
8
4
0
1000
0
1
2
4
7
15
30
(MHz)
60
100
1
2
4
7
15
30
60 100
f
ꢀ
FREQUENC
ꢀ
f,
ꢀ
FREQUENC
ꢀ
(MHz)
Figure 8. Output Capacitance versus Frequency
Figure 9. Output Resistance versus Frequency
90
60
30
V
ꢀ
Ă=
ꢀ
5
150
ꢀ
V
CC
15
I ꢀ
CQ
Ă=
ꢀ
ꢀ
mA
W
P ꢀ
out
=
ꢀ
150
ꢀ
ꢀ
PEP
f
MHz
Z
in
Ohms
7.0
4.0
2.0
4.0
7.0
15
7.15
4.20
2.55
1.60
1.10
0.78
0.67
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
-
-
-
-
-
-
-
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
j2.40
j2.25
j1.75
j1.15
j0.70
j0.30
j0.10
30
60
90
f
ꢀ
=
ꢀ
2.
ꢀ
MHz
Z
ꢀ
=ꢀ Ω10ꢀ
o
Figure 10. Series Equivalent Impedance
4
PACKAGE DIMENSIONS
A
U
NOTES:
1. DIMENSIONING
Y14.5M, 1982.
2. CONTROLLING
ꢀ
AN
ꢀ
TOLERANCING
INCH.
MILLIMETERS
ꢀ
PER
ꢀ
ANSI
ꢀ
M
ꢀ
DIMENSION:
ꢀ
1
INCHES
DIM MIN MAX
M
Q
MIN
24.39
11.82
5.82
5.49
2.14
3.66
0.08
11.05
MAX
25.14
12.95
6.98
5.96
2.79
4.52
0.17
---
4
A
B
C
D
E
H
J
0.960
0.465
0.229
0.216
0.084
0.144
0.003
0.435
0.990
0.510
0.275
0.235
0.110
0.178
0.007
---
R
B
2
3
K
M
Q
R
U
D
45 NOM
45 NOM
_
_
K
0.115
0.246
0.720
0.130
0.255
0.730
2.93
6.25
3.30
6.47
18.29
18.54
J
STYLE
PIN
ꢀ
1:
ꢀ
1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
C
H
E
SEATING
PLANE
CASE 211–11
ISSUE N
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
5
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