MSW2041-204 [TE]
SP2T PIN Diode Switch;
| 型号： | MSW2041-204 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | SP2T PIN Diode Switch |
| 文件： | 总12页 (文件大小：1371K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSW204x-204
SP2T PIN Diode Switch
Features
Rev. V2
Wide Frequency Range: 50 MHz to 4 GHz, in 2
bands
Surface Mount SP2T Switch in Compact Outline:
8 mm L x 5 mm W x 2.5 mm H
Higher Average Power Handling than Plastic
Packaged
MMIC Switches: 158 W CW
High RF Peak Power: 500 W
Low Insertion Loss: 0.25 dB
High IIP3: 65 dBm
Operates From Positive Voltage Only: 5 V & 28 V
to 125 V
CS204
Functional Schematic
Ultra-Thin Termination Plating to Combat
Embrittlement
RoHS* Compliant
Description
The MSW2040-204 (50 MHz - 1 GHz) and
MSW2041-204 (400 MHz - 4 GHz) series of surface
mount silicon PIN diode SP2T switches can be used
for high power transmit/receive (TR) switching or
active receiver protection. These switches are
manufactured using a proven hybrid manufacturing
process incorporating high voltage PIN diodes and
passive devices integrated on a ceramic substrate.
These low profile, compact, surface mount
components offer superior small and large signal
performance compared to that of MMIC devices in
QFN packages. The package has ultra-thin Au
termination plating to combat embrittlement. The
SP2T switches are designed in a symmetrical
topology to enable either switched RF port to be
used as the high-input-power-handling port, to
minimize insertion loss and to maximize isolation
performance. The very low thermal resistance (<25
ºC/W) of the PIN diodes in these devices enables
them to reliably handle RF incident power levels of
52 dBm CW and RF peak incident power levels of
57 dBm in cold switching applications at TA = 85ºC.
The thick I layers of the PIN diodes (>100 µm),
coupled with their long minority carrier lifetime (>2
µs), produces input third order intercept point (IIP3)
greater than 65 dBm. These diodes are optimized
for use in applications for which high volume,
surface mount, solder re-flow manufacturing is
employed. These products are durable and capable
of reliably operating in military, commercial, and
industrial environments.
Ordering Information
Part Number
Package
MSW2040-204-T
MSW2040-204-R
MSW2040-204-W
MSW2041-204-T
MSW2041-204-R
MSW2041-204-W
MSW2040-204-E
MSW2041-204-E
tube
250 or 500 piece reel
Waffle pack
tube
250 or 500 piece reel
Waffle pack
RF evaluation board
RF evaluation board
* Restrictions on Hazardous Substances,
European Union Directive 2011/65/EU.
1
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DS-xxxxxxx
MSW204x-204
SP2T PIN Diode Switch
Rev. V2
MSW2040-204 Electrical Specifications: TA = +25°C, PIN = 0 dBm, Z0 = 50 Ω
Parameter
Frequency
Test Conditions
Units
MHz
dB
Min.
50
Typ.
Max.
—
—
1000
Bias State 1: port J0 to J1
Bias State 2: port J0 to J2
0.2
0.5
0.3
0.7
Insertion Loss
Return Loss
—
Bias State 1: port J0 to J1
Bias State 2: port J0 to J2
18
14
20
15
dB
—
—
52
57
3
Bias State 1: port J0 to J1
Bias State 2: port J0 to J2
47
30
50
33
Isolation
dB
CW Incident Power1
Peak Incident Power1
Switching Time2
Source & Load VSWR = 1.5:1
dBm
dBm
µs
—
—
—
—
—
2
Source & Load VSWR = 1.5:1
Pulse Width = 10 µs, Duty Cycle = 1%
10% -90% RF Voltage,
TTL rep rate = 100 kHz
F1 = 500 MHz, F2 = 510 MHz
P1 = P2 = 10 dBm
Input IP3
dBm
60
65
—
Measure on path biased to low loss state
MSW2041-204 Electrical Specifications: TA = +25°C, PIN = 0 dBm, Z0 = 50 Ω
Parameter
Frequency
Test Conditions
Units
MHz
dB
Min.
400
—
Typ.
Max.
—
—
4000
Bias State 1: port J0 to J1
Bias State 2: port J0 to J2
0.2
0.5
0.3
0.7
Insertion Loss
Return Loss
Bias State 1: port J0 to J1
Bias State 2: port J0 to J2
18
14
20
15
dB
—
—
52
57
3
Bias State 1: port J0 to J1
Bias State 2: port J0 to J2
47
30
50
33
Isolation
dB
CW Incident Power1
Peak Incident Power1
Switching Time2
Source & Load VSWR = 1.5:1
dBm
dBm
µs
—
—
—
—
—
2
Source & Load VSWR = 1.5:1
Pulse Width = 10 µs, Duty Cycle = 1%
10% -90% RF Voltage,
TTL rep rate = 100 kHz
F1 = 2.00 GHz, F2 = 2.01 GHz
P1 = P2 = 10 dBm
Input IP3
dBm
60
65
—
Measure on path biased to low loss state
Continued
2
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MSW204x-204
SP2T PIN Diode Switch
Rev. V2
Bias State Conditions:
State 1
State 2
(J0 - J1 in low insertion loss state,
J0 - J2 in isolation state):
a. B1: VHIGH1, 0 mA
b. B2: -25 mA, 0 V
(J0 - J2 in low insertion loss state,
J0 - J1 in isolation state):
a. B1: -25 mA, 0 V
b. B2: VHIGH1, 0 mA
1
c. J1: -150 mA, 0 V
c. J1: 25 mA, VHIGH
1
d. J2: 25 mA, VHIGH
d. J2: -150 mA, 0 V
e. J0: 150 mA, ≈0.9 V
e. J0: 150 mA, ≈0.9 V
1. PIN diode minimum reverse DC voltage (VHIGH) to maintain high resistance in the OFF PIN diode is determined by RF frequency, incident
power, duty cycle, characteristic impedance and VSWR as well as by the characteristics of the diode. The recommended minimum reverse
bias voltage (VHIGH) values are provided in the Minimum Reverse Bias Voltage table of this datasheet.
2. Switching time (50% TTL - 10/90% RF Voltage) is a function of the PIN diode driver performance as well as the characteristics of the
diode. An RC “current spiking network” is used on the driver output to provide a transient current to rapidly remove stored charge from the
PIN diode. Typical component values are: R = 50 to 220 Ω and C = 470 to 1,000 pF. MACOMs MPD2T28125-700 is the recommended PIN
diode driver to interface with the MSW2040-204 and MSW2041-204 SP2T switches.
Truth Table3,4
Port
J0 - J1
Port
J0 - J2
Bias: J13,4
Bias: J23,4
B13,4
B23,4
Low Loss
Isolation
Isolation
V = 0 V, I = -150 mA V =VHIGH, I = +25 mA V = VHIGH, I = 0 mA
V =VHIGH, I = +25 mA V = 0 V, I = -150 mA V = 0 V, I = -25 mA
V = 0 V, I = -25 mA
V = VHIGH, I = 0 mA
Low Loss
3. 28 V</= VHIGH </= 125 V.
4. PIN diode minimum reverse DC voltage (VHIGH) to maintain high resistance in the OFF PIN diode is determined by RF frequency, incident
power, duty cycle, characteristic impedance and VSWR as well as by the characteristics of the diode. The recommended minimum reverse
bias voltage (VHIGH) values are provided in the Minimum Reverse Bias Voltage table of this datasheet.
RF Bias Network Component Values
Part #
Frequency (MHz)
Inductors
DC Blocking Capacitors RF Bypass Capacitors
MSW2040-204
MSW2041-204
50 - 1000
4.7 µH
0.1 µF
0.1 µF
400 - 4000
82 nH
27 pF
270 pF
3
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MSW204x-204
SP2T PIN Diode Switch
Rev. V2
Minimum Reverse Bias Voltage5: PINC = 125 W CW, Z0 = 50 Ω with 1.5:1 VSWR
Part #
20 MHz
100 MHz
200 MHz
400 MHz
1 GHz
4 GHz
MSW2040-204
MSW2041-204
125 V
N/A
25 V
N/A
85 V
55 V
85 V
28 V
55 V
N/A
125 V
28 V
5. N/A denotes the switch is not recommended for that frequency band.
The minimum reverse bias voltage required to maintain a PIN diode out of conduction in the presence of a large
RF signal is given by:
Where:
|VDC
|
=
=
=
=
magnitude of the minimum DC reverse bias voltage
magnitude of the peak RF voltage (including the effects of the VSWR)
lowest RF signal frequency expressed in MHz
duty factor of the RF signal
|VRF|
FMHz
D
WMILS = thickness of the diode I layer, expressed in mils (thousands of an inch)
R. Caverly and G. Hiller, ―Establishing the Minimum Reverse Bias for a PIN Diode in a High Power Switch, IEEE Transac-
tions on Microwave Theory and Techniques, Vol.38, No.12, December 1990
4
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MSW204x-204
SP2T PIN Diode Switch
Rev. V2
Absolute Maximum Ratings
Parameter
Conditions
Absolute Maximum
J0, J1, J2 port
B1, B2 port
250 mA
150 mA
Forward Current
Reverse Voltage
J0, J1, J2, B1, B2 port
IF = 250 mA
125 V
1.2 V
Forward Diode Voltage
J0, J1, J2 port
Source & Load VSWR = 1.5:1,
TC = 85°C, cold switching
J0, J1, J2 port
CW Incident Power Handling6
51 dBm
57 dBm
Peak Incident Power Handling6 Source & Load VSWR = 1.5:1, TC = 85°C, cold switching,
Pulse Width = 10 µs, Duty Cycle = 1%
Total Dissipated RF & DC Power6
Junction Temperature
TC = 85°C, cold switching
6 W
—
—
+175°C
Operating Temperature
Storage Temperature
-65°C to +125°C
-65°C to +150°C
+260°C
—
Assembly Temperature
t = 10 s
6. Backside RF and DC grounding area of device must be completely solder attached to the RF circuit board vias for proper electrical and
thermal circuit grounding.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 1C
(HBM) devices. The moisture sensitivity level (MSL)
rating for this part is MSL 1.
Environmental Capabilities
The MSW204x-204 diode is capable of meeting the
environmental requirements of MIL-STD-202 and
MIL-STD-750.
5
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MSW204x-204
SP2T PIN Diode Switch
Rev. V2
Typical Performance Curves
MSW2041-204
MSW2040-204
Insertion Loss
Insertion Loss
Isolation
Isolation
Return Loss
Return Loss
6
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MSW204x-204
SP2T PIN Diode Switch
Rev. V2
SP2T Switch Evaluation Board Schematic
The evaluation boards for the MSW204x family of
surface mount silicon PIN diode SP2T T-R switches
allow the full exercise of each switch for small signal
performance analysis, as well as for large signal
operation with maximum input signal power of
45 dBm (CW or peak power). Each evaluation board
includes the appropriate MSW204x-204 switch, DC
blocking capacitors at each RF port and bias
decoupling networks at each RF port which allow DC
or low frequency control signals to be applied to the
switch. Four complementary control signals are
required for proper operation. Bias voltages are
applied to the B1 and B2 bias ports, as well as to the
J0, J1 and J2 RF ports to control the state of the
switch. A fixed bias voltage must be applied to the
J0 port (connect 5 V to pin 3 of multipin connector
P1) whenever the switch is in operation.
Caution: the evaluation board, as supplied from
the factory, is not capable of handling RF input
signals larger than 45 dBm. If performance of the
switch under larger input signals is to be evaluated
several of the passive components on the board
must be changed in order to safely handle the
dissipated power as well as the high bias voltage
necessary for proper performance. The evaluation
board must be connected to an adequate heat sink
for large signal operation. Contact the factory for
recommended components. For the purposes of
description, State 1 is defined to be the condition in
which the evaluation board is biased to produce the
low insertion condition between ports J0 and J1
while producing high isolation between ports J0 and
J2. State 2 is the converse of State 1.
7
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MSW204x-204
SP2T PIN Diode Switch
Rev. V2
State 1
State 2
In State 1, the series PIN diode between the J0 and
J1 ports is forward biased by applying 0 V to the J1
bias input port (pin 1 of multi-pin connector P1). The
magnitude of the resultant bias current through the
diode is primarily determined by the voltage applied
to the J0 bias port (pin 3 of P1), the magnitude of the
forward voltage across the PIN diode and the
resistance of R1. This current is nominally 150 mA.
At the same time, the PIN diode connected between
J2 and B2 ports is also forward biased by applying a
high bias voltage, nominally 28 V, to the J2 bias port
(pin 7 of P1) and 0 V to the B2 bias port (pin 5 of
P1). Under this condition, the PIN diode connected
between the J0 and J2 ports is reverse biased and
the PIN diode connected between the J2 and B2
ports is forward biased. The magnitude of the bias
current through this diode is primarily determined by
the voltage applied to the J2 bias port, the
magnitude of the forward voltage across the PIN
diode and the resistance of R4. This current is
nominally 25 mA.
In the State 2, the series PIN diode between the J0
and J2 ports is forward biased by applying 0 V to the
J2 bias input port (pin 7 of multi-pin connector P1).
The magnitude of the resultant bias current through
the diode is primarily determined by the voltage
applied to the J0 bias port (pin 3 of P1), the
magnitude of the forward voltage across the PIN
diode and the resistance of R1. This current is
nominally 150 mA. At the same time, the PIN diode
connected between J2 and B2 ports is reverse
biased by applying a high bias voltage, nominally
28 V, to the B2 bias port (pin 5 of P1). A high
voltage, nominally 28 V, is also applied to the J1
bias port (pin 1 of P1). Under this condition, the PIN
diode connected between the J0 and J1 ports is
reverse biased thus isolating the J1 RF port from the
RF signal path between J0 and J2. The reverse
voltage across this diode is the arithmetic difference
of the bias voltage applied to the J1 bias port and
the DC forward voltage of the forward-biased J0-to-
J2 series PIN diode. The minimum voltage required
to maintain the series diode on the J0-to-J1 side of
the switch out of conduction is a function of the
magnitude of the RF voltage present, the standing
wave present at the diode’s anode, the frequency of
the RF signal and the characteristics of the series
diode, among other factors.
The series PIN diode which is connected between
the J0 and J2 ports must be reverse biased during
State 1. The reverse bias voltage must be
sufficiently large to maintain the diode in its non-
conducting, high impedance state when large RF
signal voltage may be present in the J0-to- J1 path.
The reverse voltage across this diode is the
arithmetic difference of the bias voltage applied to
the J2 bias port and the DC forward voltage of the
forward biased J0-to-J1 series PIN diode.
The values of the reactive components which
comprise the bias decoupling networks as well as
the signal path DC blocking are shown in the table
RF Bias Network Recommended Component
Values.
The minimum voltage required to maintain the series
diode between J0 and J2 out of conduction is a
function of the magnitude of the RF voltage
present, the standing wave present at the series
diode’s anode, the frequency of the RF signal and
the characteristics of the series diode, among other
factors. Minimum control voltages for several signal
frequencies are shown in the table “Minimum
Reverse Bias Voltage”, assuming the input power to
the J0 or J1 port to be 100 W CW and the VSWR on
the J0-J1 path to be 1.5:1.
Reference Path
A reference path is provided on the evaluation
board, complete with bias decoupling networks, so
that the magnitude of the insertion loss of the micro-
strip transmission lines connected to the switch and
the associated bias decoupling components can be
measured and removed from the measured
performance of the switch.
8
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MSW204x-204
SP2T PIN Diode Switch
Rev. V2
SP2T Switch Evaluation Board Layout
Evaluation Board Parts List
MSW2040-204 Band 1
Part
Value
470 pF
470 pF
600 Ω
39 Ω
Case Style
C1, C2, C5 - C10,
C13 - C16, C19
0603
0603
0603
2512
2512
7C3, C4, C11, C12,
C17, C18, C20, C21
L1 - L7
R1, R3
R2, R4
1200 Ω
MSW2041-204 Band 2
Value
Part
Case Style
0603
C1, C5, C7, C13, C15
47 pF
220 pF
1000 pF
43 nH
C2, C6, C8, C9, C10,
C14, C16, C19, C22
7C3, C4, C11, C12,
C17, C18, C20, C21
0603
0603
L1 - L7
R1, R3
R2, R4
0603
39 Ω
2512
1200 Ω
2512
7. Second bypass capacitor is optional.
9
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MSW204x-204
SP2T PIN Diode Switch
Rev. V2
Assembly Instructions
SP2T PIN Diodes may be placed onto circuit boards with pick and place manufacturing equipment from tape and
reel. The devices are attached to the circuit using conventional solder re-flow or wave soldering procedures with
RoHS type or Sn 60 / Pb 40 type solders.
10
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MSW204x-204
SP2T PIN Diode Switch
Rev. V2
Outline (CS204)8,9
COMPANY LOGO
DATE CODE
PART NUMBER
RF Circuit Solder footprint
8. Hatched metal area on circuit side of device is RF, DC and thermal grounded.
9. Vias should be solid copper fill and gold plated for optimum heat transfer from backside of switch module through Circuit Vias to metal
thermal ground.
11
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DS-xxxxxxx
MSW204x-204
SP2T PIN Diode Switch
Rev. V2
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
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specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
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12
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DS-xxxxxxx
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