NPA1008-SMB [TE]
GaN on Si HEMT D-Mode Integrated Amplifier;
| 型号： | NPA1008-SMB |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaN on Si HEMT D-Mode Integrated Amplifier |
| 文件： | 总11页 (文件大小：1133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Features
GaN on Si HEMT D-Mode Integrated Amplifier
Suitable for Linear and Saturated Applications
Wideband tuned from 20 - 2700 MHz
50 Ω Input Matched
28 V Operation
45% Drain Efficiency
100% RF Tested
Lead-Free 4 mm 24-lead PQFN Package
Halogen-Free “Green” Mold Compound
RoHS* Compliant
Functional Schematic
N/C
N/C
N/C
N/C
N/C
20
N/C
19
Description
24
23
22
21
The NPA1008 is a wideband integrated GaN power
amplifier optimized for 20 - 2700 MHz operation.
This amplifier has been designed for saturated and
linear operation with output levels to 5 W (37 dBm)
assembled in a lead-free 4 x 4 mm 24-lead QFN
plastic package.
1
2
3
4
5
6
18 N/C
VG
N/C
RFIN
RFIN
N/C
N/C
17 N/C
16 RFOUT / VD
15 RFOUT / VD
14 N/C
Input
Match
The NPA1008 is ideally suited for general purpose
narrowband to broadband applications in test and
measurement, defense communications, land
mobile radio and wireless infrastructure.
25
Paddle
13 N/C
7
8
9
N/C
10
N/C
11
12
N/C
N/C
N/C
N/C
Ordering Information
Pin Designations
Part Number
NPA1008
Package
Pin No.
1
Pin Name
Function
Gate - DC Bias
No Connection
RF Input
Bulk Quantity
Sample Board
VG
NPA1008-SMB
2
N/C1
3,4
RFIN
5-14
15,16
17-24
25
N/C1
No Connection
RFOUT / VD
N/C1
RF Output / Drain
No Connection
Ground / Source
Paddle2
1. All no connection pins may be left floating or grounded.
2. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also provide
a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive
2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
RF Electrical Specifications: TC = 25 °C , VDS = 28 V, IDQ = 88 mA
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Small Signal Gain
CW, 1900 MHz
GSS
-
15.6
-
dB
Gain
CW, POUT = 37 dBm, 1900 MHz
CW, 1900 MHz
GP
PSAT
ηSAT
PAE
10.5
12.0
38.9
47.0
44.7
-
-
-
-
dB
dBm
%
Saturated Output Power
Drain Efficiency
-
44
-
CW, 1900 MHz
Power Added Efficiency
Ruggedness
CW, POUT = 37 dBm, 1900 MHz
All phase angles
%
VSWR = 15:1, No Device Damage
DC Electrical Specifications: TC = 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Drain-Source Leakage Current
VGS = -8 V, VDS = 100 V
IDLK
-
4
-
mA
-
-2.5
-2.1
-
-
-0.5
-0.3
-
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
On Resistance
VGS = -8 V, VDS = 0 V
VDS = 28 V, ID = 4 mA
VDS = 28 V, ID = 88 mA
VDS = 2 V, ID = 45 mA
IGLK
VT
2
mA
V
-1.5
-1.2
1.2
2.3
VGSQ
RON
V
Ω
Saturated Drain Current
VDS = 7 V pulsed, pulse width 300 µs ID(SAT)
-
-
A
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Absolute Maximum Ratings3,4,5
Parameter
Absolute Maximum
Drain Source Voltage, VDS
100 V
Gate Source Voltage, VGS
Gate Current, IG
-10 to 3 V
12 mA
Junction Temperature, TJ
Operating Temperature
+200°C
-40°C to +85°C
-65°C to +150°C
+350 V
Storage Temperature
ESD Min. - Human Body Model (HBM)
3. Exceeding any one or combination of these limits may cause permanent damage to this device.
4. MACOM does not recommend sustained operation near these survivability limits.
5. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Thermal Characteristics6,7
Parameter
Test Conditions
Symbol Typical
ӨJC 12.1
Units
Thermal Resistance
VDS = 28 V, TJ =200°C
°C/W
6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
7. The thermal resistance of the mounting configuration must be added to the device ӨJC , for proper TJ calcula-
tion during operation. The recommended via pattern, shown on page 4, on a 20 mil thick, 1 oz plated copper,
PCB adds an additional 4 °C/W to the typical value.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1B
devices.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Evaluation Board and Recommended Tuning Solution
20 - 2700 MHz Broadband Circuit
L1
0.9 mH
VGS
VDS
C9
1000 pF
C4
4.7 mF
C3
10 mF
R1
470 W
L2
0.9 mH
L3
2.2 nH
L4
1.5 nH
C2
2400 pF
RF
In
RF
Out
NPA1008
C5
0.6 pF
C6
0.8 pF
C7
0.5 pF
C1
2400 pF
C8
0.6 pF
Description
Bias Sequencing
Turning the device ON
Parts measured on evaluation board (20-mil thick
RO4350). The PCB’s electrical and thermal ground
is provided using a standard-plated densely packed
via hole array (see recommended via pattern).
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (28 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Matching is provided using a combination of
lumped elements and transmission lines as shown
in the simplified schematic above. Recommended
tuning solution component placement, transmission
lines, and details are shown on the next page.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
Recommended Via Pattern (All dimensions shown as inches)
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Evaluation Board and Recommended Tuning Solution
20 - 2700 MHz Broadband Circuit
VGS
VDS
RFIN
RFOUT
Parts list
Reference
C1, C2
C3
Value
2400 pF
10 µF
Tolerance
-
Manufacturer
Part Number
Dielectric Labs, Inc.
TDK
C08BL242X-5UN-X0
10%
C2012XR1C106M085AC
C5750X7R2A475K230KA
800A0R6BT250X
800A0R8BT250X
800A0R5BT250X
C0805C102K1RACTU
ERJ-P03F4700V
C4
4.7 µF
0.6 pF
0.8 pF
0.5 pF
1000 pF
470 Ω
10%
TDK
C5, C8
C6
0.1 pF
0.1 pF
0.1 pF
10%
ATC
ATC
C7
ATC
C9
Kemet
Panasonic
Coilcraft
AVX
R1
10%
L1, L2
L3
0.9 µH
2.2 nH
1.5 nH
10%
1008AF-901XJLC
L08052R2CEW
±0.2 nH
±0.2 nH
L4
AVX
L06031R5CGS
PCB
Rogers RO4350, r=3.5, 0.020”
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Typical Performance as measured in the Broadband Evaluation Board:
CW, VDS = 28 V, IDQ = 88 mA, TC = 25°C (unless noted)
Device s-parameters (Deembedded)
Broadband Circuit s-Parameters
20
20
0
0
15
10
15
10
-5
-5
-10
-15
-20
-10
-15
5
0
S21
5
0
S21
S11
S22
S11
S22
-20
3
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
Frequency (GHz)
Frequency (GHz)
Performance vs. Frequency at POUT = 37 dBm
Performance vs. Input Return Loss at POUT = 37 dBm
15
25
20
15
10
5
70
60
50
40
30
20
0
Gain
Gain
IRL
PAE
14
-5
13
12
11
10
-10
-15
-20
-25
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Frequency (GHz)
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Typical Performance as measured in the Broadband Evaluation Board:
CW, VDS = 28 V, IDQ = 88 mA, TC = 25°C (unless noted)
Gain vs. Frequency at POUT = 37 dBm
Gain vs. Frequency
16
17
POUT = 24dBm
-40°C
15
16
15
14
13
12
11
10
POUT = 36dBm
POUT = 37dBm
+25°C
14
+85°C
13
12
11
10
9
8
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Frequency (GHz)
Input Return Loss at POUT = 37 dBm vs. Frequency
Input Return Loss vs. Frequency
-6
-6
-40°C
-8
-10
-12
-14
+25°C
+85°C
-8
-10
-12
-14
-16
POUT = 24dBm
-16
POUT = 36dBm
-18
-20
POUT = 37dBm
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Frequency (GHz)
Power Added Efficiency at POUT = 37 dBm vs. Frequency
Power Added Efficiency vs. Frequency
60
60
-40°C
50
40
55
+25°C
+85°C
50
30
45
40
35
30
POUT = 24dBm
POUT = 36dBm
20
POUT = 37dBm
10
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Frequency (GHz)
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Typical Performance as measured in the Broadband Evaluation Board:
CW, VDS = 28 V, IDQ = 88 mA, TC = 25°C (unless noted)
Gain vs. POUT
Gain vs. POUT
18
16
14
12
10
8
18
16
14
12
10
8.0
100MHz
500MHz
900MHz
1500MHz
1900MHz
2400MHz
2700MHz
20
25
30
35
40
20
25
30
35
40
POUT (dBm)
POUT (dBm)
Input Return Loss vs. POUT
Input Return Loss vs. POUT
-8
-8
-10
-12
-14
-10
-12
-14
-16
-18
-20
100MHz
1500MHz
1900MHz
2400MHz
2700MHz
-16
500MHz
900MHz
-18
-20
20
25
30
35
40
20
25
30
POUT (dBm)
35
40
POUT (dBm)
Power Added Efficiency vs. POUT
Power Added Efficiency vs. POUT
80
60
70
60
50
40
30
20
10
0
100MHz
500MHz
900MHz
1500MHz
50
1900MHz
2400MHz
40
2700MHz
30
20
10
0
10
15
20
25
30
35
40
45
20
25
30
35
40
POUT (dBm)
POUT (dBm)
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Typical 2-Tone Performance as measured in the Broadband Evaluation Board
1 MHz Tone Spacing, Freq = 1900 MHz, VDS = 28 V, IDQ = 88 mA, TC = 25°C (unless noted)
2-Tone IMD vs. Output Power vs. IDQ
2-Tone Gain vs. Output Power vs. IDQ
-15
17
48mA
-20
16
15
14
13
68mA
88mA
-25
108mA
128mA
-30
-35
-40
-45
-50
48mA
12
68mA
88mA
108mA
128mA
11
10
0.01
0.1
1
10
0.01
0.1
1
10
POUT (W-PEP)
POUT (W-PEP)
2-Tone IMD vs. Output Power
2-Tone IMD vs. Tone Spacing (POUT = 37 dBm-PEP)
-10
-10
-IMD3
+IMD3
-IMD3
+IMD3
-15
-20
-IMD5
-IMD5
-20
-25
-30
-35
-40
-45
-50
+IMD5
-IMD7
+IMD7
+IMD5
-IMD7
-30
+IMD7
-40
-50
-60
10
0.01
0.1
1
0.1
1
10
100
POUT (W-PEP)
Tone Spacing (MHz)
Quiescent VGS vs. Temperature
-0.70
-0.80
-0.90
-1.0
1.1
-1.2
-1.3
-1.4
-1.5
48mA
88mA
148mA
-50
-25
0
25
50
75
100
Temperature (oC)
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Lead-Free 4 mm 24-Lead QFN Plastic Package†
All dimensions shown as inches [millimeters]
†
Meets JEDEC moisture sensitivity level 3 requirements.
Plating is Matte Tin
10
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY
OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN
THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR
CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.
11
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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