NPTB00050_15 [TE]
50W RF Power Transistor;
| 型号： | NPTB00050_15 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 50W RF Power Transistor |
| 文件： | 总8页 (文件大小：510K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPTB00050
Not recommended for new designs
Contact applications@nitronex.com for questions or support
Gallium Nitride 28V, 50W RF Power Transistor
®
Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for broadband operation from
DC - 4000MHz
• 50W P3dB CW narrowband power
• 25W P3dB CW broadband power from
500-1000MHz
• Characterized for operation up to 32V
• 100% RF tested
• Thermally enhanced industry standard package
Broadband
50 Watt, 28 Volt
• High reliability gold metallization process
• Lead-free and RoHS compliant
GaN HEMT
• Subject to ECCN 3A982.a.1 export control
RF Specifications (CW): VDS = 28V, IDQ = 450mA, Frequency = 3000MHz, TC = 25°C, Measured in Nitronex Test Fixture
Symbol
Parameter
Min
Typ
Max
Units
P3dB
P1dB
GSS
h
Average Output Power at 3dB Gain Compression
Average Output Power at 1dB Gain Compression
Small Signal Gain
45
33
50
38
-
-
-
-
W
W
10.5
55
11.5
60
dB
%
Peak Drain Efficiency at POUT = P3dB
Output mismatch stress, VSWR = 7:1, all phase
angles, POUT = P1dB
y
No Performance Degradation After Test
Typical OFDM Performance: VDS = 28V, IDQ = 300mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst,
continuous frame data, 10MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF.
Frequency = 2400 to 2600MHz. POUT,AVG = 6W, TC=25°C.
Symbol
Parameter
Typ
Units
GP
h
Power Gain
12.0
23
dB
%
Drain Efficiency
Error Vector Magnitude
EVM
2.0
%
NPTB00050
Page 1
NDS-007 Rev 6, April 2013
NPTB00050
Not recommended for new designs
Contact applications@nitronex.com for questions or support
DC Specifications: TC = 25°C
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 16mA)
VBDS
IDLK
100
-
-
-
V
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V)
0.1
16
mA
On Characteristics
Gate Threshold Voltage
(VDS = 28V, ID = 16mA)
VT
-2.3
-2.0
-
-1.8
-1.5
0.25
-1.3
-1.0
V
V
W
Gate Quiescent Voltage
(VDS = 28V, ID = 450mA)
VGSQ
RON
On Resistance
(VGS = 2V, ID = 120mA)
0.40
Drain Current
ID
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, VGS = 2V)
9.2
9.8
-
A
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
VGS
IG
Drain-Source Voltage
100
-10 to 3
80
V
V
Gate-Source Voltage
Gate Current
mA
W
PT
Total Device Power Dissipation (Derated above 25°C)
Thermal Resistance (Junction-to-Case)
Storage Temperature Range
55
qJC
TSTG
TJ
3.2
°C/W
°C
-65 to 150
200
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
°C
HBM
MM
1B (>500V)
M2 (>100V)
NPTB00050
Page 2
NDS-007 Rev 6, April 2013
NPTB00050
Not recommended for new designs
Contact applications@nitronex.com for questions or support
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =450mA, TA=25°C unless otherwise noted
DQ
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance
Frequency
Drain Efficiency @
ZS (W)
ZL (W)
PSAT (W)
Gain (dB)
(MHz)
PSAT (%)
2000
2400
2500
2600
2700
3000
3.2 - j3.5
3.1 - j7.5
3.1 - j8.4
3.2 - j9.4
3.7 - j11.0
4.4 - j13.0
4.8 - j2.5
5.0 - j3.5
5.2 - j3.6
5.3 - j3.7
5.2 - j4.9
5.2 - j5.3
50
50
50
50
50
50
15.0
13.8
13.8
13.5
13.1
13.0
65
62
62
61
60
60
Z is the source impedance
S
presented to the device.
Z is the load impedance
L
presented to the device.
Figure 1 - Optimal Impedances for CW Performance, VDS = 28V, IDQ = 450mA
NPTB00050
Page 3
NDS-007 Rev 6, April 2013
NPTB00050
Not recommended for new designs
Contact applications@nitronex.com for questions or support
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =450mA, TA=25°C unless otherwise noted.
DQ
Figure 2 - Typical CW Performance vs. IDQ
VDS = 28V, 3000MHz
Figure 3 - Typical CW Performance
VDS = 28V, IDQ = 450mA
NPTB00050
Page 4
NDS-007 Rev 6, April 2013
NPTB00050
Not recommended for new designs
Contact applications@nitronex.com for questions or support
Typical Device Characteristics
VDS=28V, I =450mA, TA=25°C unless otherwise noted.
DQ
Figure 5 - MTTF of NRF1 Devices as a
Function of Junction Temperature
Figure 4 - Power Derating Curve
Figure 6 - Typical CW Performance vs. Temperature
in Nitronex Test Fixture,
VDS = 28V, IDQ = 450 mA, 3000MHz
NPTB00050
Page 5
NDS-007 Rev 6, April 2013
NPTB00050
Not recommended for new designs
Contact applications@nitronex.com for questions or support
NPTB00050, 3000MHz CW Production Test Fixture
VDS=28V, I =450mA, TA=25°C unless otherwise noted. Additional design information and data available at www.nitronex.com.
DQ
VGS
C1
C3
C2
+
VGS
VDS
VDS
+
C4
C6
C10
R3
R2
C9
C7
C8
C5
RFIN
RFOUT
TL5
TL5
65mils
600mils
65mils
600mils
NPTB00050
RFOUT
C12
Nitronex
RFIN
NPTB00050
8/01/2006
TL4
65mils
1040mils
TL3
368mils
297mils
C11
TL1
60mils
250mils
TL2
349mils
240mils
C13
Figure 7 - NPTB00050 3000MHz Test Fixture
Table 2: NPTB00050 3000MHz Test Fixture Bill of Materials
Name
Value
150uF
270uF
0.01uF
0.1uF
Vendor
Nichicon
United Chmi-Con
AVX
Vendor Number
C1
C10
UPW1C151MED
ELXY630ELL271MK25S
12061C103KAT2A
C1206C104K1RACTU
ECJ-5YB2A105M
ATC600F5R6CT
C3, C7
C2, C8
C4, C9
C5, C6, C12
C11
Kemet
1.0 uF
5.6pF
1.8pF
0.7pF
33 ohm
0.33 ohm
-
Panasonic
ATC
ATC
ATC600F1R8AT
C13
ATC
ATC600F0R7AT
R2
Panasonic
Panasonic
Taconic
ERJ-6ENF33R0V
ERJ-6RQFR33V
R3
Substrate
RF35, t=30mil, e =3.5
r
NPTB00050
Page 6
NDS-007 Rev 6, April 2013
NPTB00050
Not recommended for new designs
Contact applications@nitronex.com for questions or support
1
Ordering Information
Part Number
Description
NPTB00050B
NPTB00050 in AC360B-2 Metal-Ceramic Bolt-Down Package
1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com
Figure 8 - AC360B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])
NPTB00050
Page 7
NDS-007 Rev 6, April 2013
NPTB00050
Not recommended for new designs
Contact applications@nitronex.com for questions or support
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
Important Notice
Nitronex, LLC reserves the right to make corrections, modifications, enhancements, improvements and other changes to
its products and services at any time and to discontinue any product or service without notice. Customers should obtain
the latest relevant information before placing orders and should verify that such information is current and complete. All
products are sold subject to Nitronex terms and conditions of sale supplied at the time of order acknowledgment. The latest
information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at
www.nitronex.com.
Nitronex warrants performance of its packaged semiconductor or die to the specifications applicable at the time of sale in
accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex
deems necessary to support the warranty. Except where mandated by government requirements, testing of all parameters
of each product is not necessarily performed.
Nitronex assumes no liability for applications assistance or customer product design. Customers are responsible for their
product and applications using Nitronex semiconductor products or services. To minimize the risks associated with
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All other product or service names are the property of their respective owners.
©Nitronex, LLC 2012. All rights reserved.
NPTB00050
Page 8
NDS-007 Rev 6, April 2013
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