PA1166 [TE]
28v. GaAs Ultra Linear Power; 28V 。砷化镓超线性电源
| 型号： | PA1166 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 28v. GaAs Ultra Linear Power |
| 文件： | 总2页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PA1166
1930-1990 MHz.
6 Watt
Amplifier
28v. GaAs Ultra Linear Power
Features (typical values)
High IP3 ............................................. +53.0 dBm.
Low NF .......................................................3.0 dB.
High Output Power ............................ +37.5 dBm.
Low Cost
Typical
Value
Min.
Value
Max.
Value
Parameter
Units
MHz.
dB.
Frequency
1930
23.0
1990
Typical Performance @+ 25°C
Gain
26.0
+/- 0.3
38
G a in (d B ) v s . F re q u e n c y
Gain Flatness
dB.
2 6 .5
2 6
Pout @ 1dB. comp.
Noise Figure
37
dBm.
dB.
2 5 .5
2 5
2.7
4.0
1 9 3 0
1 9 5 0
1 9 7 0
2 4 0 0
ACPR (30kHz. BW)*
VSWR (Input/Output)
IP3 (two tone)**
Supply Required***
-54.0
dBc.
N F (d B ) v s . F re q u e n c y
1.5:1/2:1
+53.0
+28/1000
2:1/3:1
3
2 .5
2
+48.0
dBm.
+28/1200 v./mA.
1 9 3 0
1 9 5 0
1 9 7 0
1 9 9 0
* ± 850kHz from fc at power level of 30dBm. (IS-95)
P o u t (d B m ) v s . F re q u e n c y
** IP3 measured with 2 tones @+24dBm. per tone @ 1MHz apart
3 8 .5
*** A 10 micro farad capacitor is required from pin3 (+V) to ground
Min and max values from 0 to 85 degrees C
3 7 .5
1 9 3 0
1 9 5 0
1 9 7 0
1 9 9 0
Outline Drawings
V S W R v s . F re q u e n c y
See Attached Document
In
O u t
2 .5
2
1 .5
1
1 9 3 0
1 9 5 0
1 9 7 0
IP 3 (d B m ) v s . F re q u e n c y
Maximum Ratings
5 4
5 3
5 2
5 1
Storage Temperature ....... -40°C to +125°C
DC Voltage .................................. +30 volts
RF Input Power .......................... +15 dBm.
Case Temperature ........................... +90°C
5 0
1 9 3 0
1 9 5 0
1 9 7 0
1 9 9 0
F re q u e n c y in M H z .
100 Emlen Way Telford, Pa. 18969
Tel. (215) 723-6011 Fax. (215) 723-6015
Rev 040201
Specifications subject to change without notice
OUTLINE DRAWING
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