PE3 [TE]
GaAs Foundry Services PROCESS PE3; 砷化镓晶圆代工服务流程PE3
| 型号： | PE3 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaAs Foundry Services PROCESS PE3 |
| 文件： | 总2页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs Foundry Services
PROCESS PE3
Features
PE3
V2.00
Typical RF Performance
FC06 (6X150) 900 um FET
•
0.5 µm MBE MESFET Technology for High Power
Applications
MMICs up to 18 GHz
100 mm wafer diameter
Layout and design assistance
Space qualification
Param.
MAG
PSAT
PAE
ft
Test Conditions
Freq.
2/12GHz
2/12GHz
2/12GHz
------
Typ. Val.
22/13.5dB
680/525mW/mm
50/41%
•
•
•
•
•
VDS = 8V, IDS = .40IDSS
VDS = 8V, IDS = .40IDSS
VDS = 8V, IDS = .40IDSS
VDS = 8V, IDS = .40IDSS
Custom test and packaging
20GHz
Description
Ordering Information
M/A-COM’s PE3 process utilizes molecular beam epitaxy (MBE) to
implement a MESFET active layer structure that achieves high
efficiency and breakdown for multi-watt power applications thru
18GHz. The focus is on products for moderate to high volume
Part Number
FE43-0001
SVC6310
Description
PE3 Wafer
Mask Set
applications.
M/A-COM offers a full compliment of foundry
services to meet the requirements for custom designing a MMIC-
based die or packaged product.
Electrical Specifications: TA = +25 °C
Parameter
200um PCM FET
IDSS
Test Conditions
Units
Min.
Typ.
Max.
VDS = 3V, VGS = 0V
mA/mm
mS/mm
V
180
125
-1.2
-11
240
150
-1.8
-15
310
185
-2.2
-
DC GM
VDS = 3V, IDS = 0.5IDSS
VDS = 3V, IDS = 0.025IDSS
IG = 0.1mA/mm
Vp
BVgd
V
RF GM
VDS = 3V, IDS = 0.5IDSS
VDS = 3V, IDS = 0.5IDSS
VDS = 3V, IDS = 0.5IDSS
VDS = 3V, IDS = 0.5IDSS
VDS = 3V, IDS = 0.5IDSS
mS
25
32
45
Cgs
pF
.140
.015
.025
20
.200
.022
.038
26
.280
.028
.050
34
Cgd
pF
Cds
pF
Ft
GHz
Sheet Resistances
NDRS (N- GaAs)
NCRS (NiCr)
GFRS (Gate Metal)
MIM Capacitors
Capacitance/unit area
Capacitor Leakage
l = 20mA
l = 10mA
l = 20mA
Ohms/sq
Ohms/sq
Ohms/sq
340
42
-
375
50
410
58
.027
.040
f = 1MHz
V = 10V
pF/mm2
360
-
400
-
440
0.5
µA
Specifications Subject to Change Without Notice.
M/A-COM Inc.
1
North America: Tel. (800) 366-2266
Fax (800) 618-8883
♦
Asia/Pacific: Tel. +81 3 3263-8761
Fax +81 3 3263-8769
♦
Europe:
Tel. +44 (1344) 869-595
Fax +44 (1344) 300-020
GaAs Foundry Services
Process PE3
V2.00
Normalized Nominal Models
Mask Layer Assignments
Parameter
25% IDSS 8 VDS
62.62
50% IDSS 8 VDS
127.96
155.44
1.303
LAYER
PROCESS
CODE
OH
PROCESS
DESCRIPTION
Ohmic
IDS mA/mm
gm mS/mm
Cgs pF/mm
Cgd pF/mm
Cds pF/mm
Td pS
3
4
140.37
1.178
BI
Boron Isolation
Resistor Deposition
Gate Finger
Gate Interconnect
Top via
5
RD
0.072
0.059
7
GF
0.172
0.185
8
GL
5.574
5.502
10
11
12
13
25
28
29
TV
Ri Ohms-mm
Gds mS/mm
Ggs mS/mm
Rg Ohms/mm
Rs Ohms-mm
Rd Ohms-mm
Lg nH/Finger
Ld nH/Finger
Cgp pF/mm
Cdp pF/mm
2.093
1.729
OL
Overlay
9.214
7.929
AP
Air-post
0.168
0.093
AS
Air-Span
47.996
0.827
47.996
0.827
BV
Back-via
FP
Final Passivation
Saw Street
0.865
0.865
ST
NOTE: Unused layer numbers are reserved for future use.
0.108
0.108
0.108
0.108
0.148
0.148
GMAX - 900um FET
0.148
0.148
Specifications Subject to Change Without Notice.
2
M/A-COM Inc.
North America: Tel. (800) 366-2266
Fax (800) 618-8883
♦
Asia/Pacific: Tel. +81 3 3263-8761
Fax +81 3 3263-8769
♦
Europe:
Tel. +44 (1344) 869-595
Fax +44 (1344) 300-020
相关型号：
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SMA Male to SMA Male Precision Cable 120 Inch Length Using 160 Series Coax, RoHS
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