PH1214-80M [TE]
Radar Pulsed Power Transistor - 80 Watts, 1.20-1.40 GHz, 150ms Pulse, 10% Duty; 雷达脉冲功率晶体管 - 80瓦， 1.20-1.40千兆赫， 150毫秒脉冲， 10 ％占空比
| 型号： | PH1214-80M |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Radar Pulsed Power Transistor - 80 Watts, 1.20-1.40 GHz, 150ms Pulse, 10% Duty |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PH1214-80M
Radar Pulsed Power Transistor - 80 Watts,
µ
1.20-1.40 GHz, 150 s Pulse, 10% Duty
Features
Outline Drawing1
•
•
•
•
•
•
•
•
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Description
M/A-COM’s PH1214-80M is a silicon bipolar NPN power
transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed
radars such as air traffic control and long-range weather radars.
Designed for common-base, class C, broadband pulsed power
applications, the PH1214-80M can produce 80 watts of output
power with medium pulse length (150 µS) at 10 percent duty
cycle. The transistor is housed in a 2-lead, rectangular metal-
ceramic flange package, with internal input and output
impedance matching networks. Dissued emitter ballast resistors
and gold metalization assure ruggedness and long-term reliabil-
ity. In addition to L-band pulsed radars, this high performance
power transistor can also be used in pulsed digital communica-
tions systems.
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Broadband Test Fixture Impedance
F (GHz)
Z IF (Ω)
Z OF (Ω)
1.20
1.30
1.40
9.4 - j4.5
8.3 - j2.8
7.9 - j1.3
7.0 - j2.8
4.5 - j3.2
3.0 - j2.1
Absolute Maximum Rating at 25°C
Parameter
Symbol
Rating
Units
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCES
70
VEBO
3.0
TEST FIXTURE
INPUT
CIRCUIT
TEST FIXTURE
OUTPUT
CIRCUIT
Collector Current (Peak)
IC
6.4
A
Total Power Dissipation
@ +25°C
PTOT
185
W
Storage Temperature
Tstg
Tj
-65 to +200
200
°C
°C
Z
Z
50
Ω
50
Ω
IF
OF
Junction Temperature
Electrical Specifications at 25°C
Symbol
BVCES
ICES
RTH(JC)
PO
Parameter
Collector-Emitter Breakdown IC = 35 mA
Collector-Emitter Breakdown VCE = 40 V
Thermal Resistance
Output Power
Power Gain
Test Conditions
Min
70
-
Max
-
3.5
0.80
Units
V
mA
°C/W
W
VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
-
80
7.5
50
9
-
-
GP
-
-
dB
Collector Efficiency
Input Return Loss
VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
η
RL
%
dB
-
VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz
-
VSWR-T Load Mismatch Tolerance
VSWR-S Load Mismatch Stability
3:1
1.5:1
-
V2.00
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty
PH1214-80M
Test Fixture Electrical Schematic1
Electrical Schematic Parts List
C1, C2
100 pF ATC size A
50 uF 50 Volts
PH1214-80M
Top View
C3
Q1
Board Type Rogers 6010.5 .025” Thick, ER = 10.5
Note:
1. Dimensions are in mils.
V2.00
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
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