SMA6011 [TE]
2000 TO 6000 MHz CASCADABLE AMPLIFIER; 2000至6000 MHz的级联放大器型号: | SMA6011 |
厂家: | TE CONNECTIVITY |
描述: | 2000 TO 6000 MHz CASCADABLE AMPLIFIER |
文件: | 总1页 (文件大小:104K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
A6011/SMA6011
2000 TO 6000 MHz
· LOW NOISE FIGURE: 1.5 dB (TYP.)
· MEDIUM OUTPUT POWER: +18 dBm (TYP.)
· HIGH EFFICIENCY: 58 mA (TYP.) @ +5 Vdc
· PHEMT AMPLIFIER
Typical Performance @ 25°C
Specifications (Rev. Date: 6/01)*
Characteristics
Typical
Guaranteed
0° to 50°C
2.0-6.0 GHz
13.5 dB
-54° to +85°C
Frequency
1.5-6.0 GHz
14.8 dB
±0.6 dB
16 dB
1.5 dB
18.0 dBm
+30 dBm
+45 dBm
+50 dBm
1.9:1 / 1.9:1
58 mA
2.0-6.0 GHz
12.5 dB
±1.1 dB
Small Signal Gain (min.)
Gain Flatness (max.)
Reverse Isolation
Noise Figure (max.)
Power Output @ 1 dB comp. (min.)
IP3
±0.9 dB
3.0 dB
16.0 dBm
2.5 dB
16.5 dBm
IP2
Second Order Harmonic IP
VSWR Input / Output (max.)
DC Current @
2.2:1 / 2.2:1
70 mA
2.1:1 / 2.1:1
65 mA
* Measured in a 50-ohm system at +5 Vdc Nominal. Subject to change without notice.
Absolute Maximum Ratings
Storage Temperature
-62° to +150°C
125°C
Max. Case Temperature
Max. DC Voltage
+7 Volts
+13 dBm
100 mW
0.25 W
125°C
Max. Continuous RF Input Power
Max. Short Term RF Input Power (1 minute max.)
Max. Peak Power (3 µsec max.)
“S” Series Burn-in Temperature (Case)
5 Vdc
Thermal Data: Vcc =
Thermal Resistance θjc
Transistor Power Dissipation Pd
Junction Temperature Rise Above Case Tjc
°C/W
W
°C
Outline Drawings
Package
Figure
Model
TO-8
A6011
Surface Mount
SMA Connectorized
CE
CA6011
Specifications subject to change without notice. • North America: 1-800-366-2266
Visit www.macom.com for complete contact and product information.
相关型号:
SMA6012
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 6-Element, NPN and PNP, Silicon, Plastic/Epoxy, 12 Pin
ALLEGRO
©2020 ICPDF网 联系我们和版权申明