SW-277PIN [TE]

High Power GaAs SPDT Switch DC - 2.5 GHz; 高功率砷化镓SPDT开关DC - 2.5 GHz的


型号：	SW-277PIN
厂家：	TE CONNECTIVITY
描述：	High Power GaAs SPDT Switch DC - 2.5 GHz 高功率砷化镓SPDT开关DC - 2.5 GHz的开关射频微波光电二极管
文件：	总2页 (文件大小：33K)
中文：	中文翻译
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High Power GaAs SPDT Switch

DC - 2.5 GHz

SW-277

V3.00

Features

SO-8

PIN 8

Positive Supply and Control Voltages

•

.2284-.2440

.1497-.1574

(3.80-4.00)

- B -

(5.80-6.20)

+36 dBm Typ. 1 dB Compression Point, 8V Supply

•

.010(0.25) M B M

Orientation

mark

+65 dBm Typ. 3rd Order Intercept Point, 8V Supply

•

Low Insertion Loss: 0.4 dB Typical

•

PIN 1

.0099-0.0196

x 45° Chamfer

(0.25-0.50)

.1890-.1968

(4.80-5.00)

- A -

Low Power Consumption: 100 µW

•

.0532-.0688

(1.35-1.75)

Fast Switching Speed

•

0°-8°

- C -

Tape and Reel Packaging Available

•

.004 (0.10)

.016-.050

.0040-.0098

(0.10-0.25)

(0.40-1.27)

Description

.0075-0.0098

(0.19-0.25)

.013-.020 TYP.

(0.33-0.51)

.050(1.27) BSC.

M/A-COM’s SW-277 is a GaAs MMIC SPDT switch in a low cost

SOIC 8-lead surface mount plastic package. The SW-277 is ideally

suited for use where very low power consumption is required.

Typical applications include transmit/receive switching,

switch matrices, and ﬁlter banks in systems such as: radio and

cellular equipment, PCM, GPS, ﬁber optic modules, and other

battery powered radio equipment.

.010(0.25) M C A M B S

8- Lead SOP outline dimensions

Narrow body .150

(All dimensions per JEDEC No. MS-012-AA, Issue C)

Dimensions in ( ) are in mm.

Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25)

.xx = ± 0.02 (.x = ±0.5)

Ordering Information

The SW-277 is fabricated with a monolithic GaAs MMIC using a

mature 1-micron process. The process features full chip

passivation for increased performance and reliability.

Model Number

SW-277 PIN

Package

SOIC 8-Lead Plastic Package

Forward Tape and Reel

Reverse Tape and Reel

SW-277TR

SW-277RTR

Electrical Speciﬁcations, T = +25°C

Parameter

Test Conditions²

Unit

Min.

Typ.

Max

Insertion Loss

DC – 2.0 GHz

DC – 1.0 GHz

DC – 0.5 GHz

DC – 0.1 GHz

0.6

0.4

0.35

0.2

0.8

0.6

0.5

0.4

Isolation

VSWR

DC – 2.0 GHz

DC – 1.0 GHz

DC – 0.5 GHz

DC – 0.1 GHz

DC – 2.0 GHz

1.2:1

Trise, Tfall

Ton, Toff

Transients

10% to 90% RF, 90% to 10% RF

50% Control to 90% RF, 50% Control to 10% RF

In Band

One dB

Compression Point

Input Power (5V Supply/Control)

Input Power (8V Supply/Control)

0.9 GHz

dBm

35.8

3rd Order

Intercept

Measured Relative (5V Supply/Control)

to Input Power (8V Supply/Control)

0.9 GHz

dBm

(for two-tone input power up to +10 dBm)

1. Refer to “Tape and Reel Packaging” Section, or contact factory.

2. All speciﬁcations apply when operated with bias voltages of 0V for Vin Low and 5 to 10V for Vin Hi, and 50 Ohm impedance at all RF ports,

unless otherwise speciﬁed. High power (greater than 1W) handling speciﬁcations apply to cold switches only. For input powers under 1W, hot

switching can be used. The high control voltage must be within +/- 0.2V of the supply voltage. The RF ports must be blocked outside of the pack-

age from ground or any other voltage.

Speciﬁcations Subject to Change Without Notice.

M/A-COM, Inc.

North America: Tel. (800) 366-2266

Fax (800) 618-8883

■

Asia/Paciﬁc: Tel. +81 3 3263 8761

Fax +81 3 3263 8769

■

Europe: Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

High Power GaAs SPDT Switch

Absolute Maximum Ratings

SW-277

V3.00

Two Tone IP₃Measurements

Supply &

Control

Voltage

Input

Power

(dBm)

3rd Order

Second

Harmonic

(dBc)

Intermodulation

Parameter

Absolute Maximum

Products (dBc) (dBm)

Max. Input Power

0.5 – 2.0 GHz

0,5V

0,6V

0,7V

0,8V

0,10V

0,5V

0,6V

0,7V

0,8V

0,10V

0,5V

0,6V

0,7V

0,8V

0,10V

0,5V

0,6V

0,7V

0,8V

0,10V

+27

+28

+29

+30

-32

-45

-58

-72

-30

-40

-53

-64

-72

-28

-37

-49

-50

-36

-46

-50

+43

+49.5

+56

-74

-77

-79

-81

-69

-76

-78

-79

-80

-59

-74

-75

-67

-73

-75

5V Control and Supply

8V Control and Supply

10V Control and Supply

+37 dBm

+40 dBm

+42 dBm

1.0 W

+63

Power Dissipation

Supply Voltage

Control Voltage

Operating Temperature

Storage Temperature

+43

-1V, +12V

+48

-1V, Vsupply + 0.2V

-40°C to +85°C

-65°C to +150°C

+54.5

+60

+64

Thermal Resistance²: θ = 87 °C/W

+43

+47.5

+53.5

+54

1. Operation of this device above any one of these parameters may cause

permanent damage.

2. Thermal resistance is given for T = 25°C. T

is the temperature of

CASE

leads 1 and 4.

+54

+43

Pin Configuration

Functional Schematic

+48

RF2

RF1

Pin No.

Description

+53

GND, Thermal Contact

+55

+V Supply

+55

3¹

RF Common

GND, Thermal Contact

Truth Table

5¹

RF1

Control Inputs

Condition of Switch

RF Common to Each RF Port

8¹

RF1

Off

RF2

Off

1. External DC blocking capacitors required

on all RF ports.

GND +V RFC GND

Thermal

Contact

Thermal

Contact

"0" – 0 to +0.2V @ 20 µA max.

"1" – +5V @ 20 µA Typ to 10V @ 500 µA max.

Typical Performance

ISOLATION vs. FREQUENCY

ISOLATION VS FREQUENCY

INSERTION LOSS vs. FREQUENCY

INSERTION LOSS VS FREQUENCY

2.0

1.5

1.0

+25°C

+85°C

0.5

-40°C

1.5

FREQUENCY (GHz)

VSWR vs. FREQUENCY

1.0

2.0

2.5

0.5

1.5

FREQUENCY (GHz)

1.0

2.0

2.5

0.5

COMPRESSION vs. CONTROL VOLTAGE (900 MHz)

COMPRESSION VS CONTROL VOLTAGE (900MHz)

VSWR VS FREQUENCY

2.0

1.8

1.0 dB Compression

1.6

1.4

0.1 dB Compression

1.2

1.0

1.5

1.0

2.0

0.5

3.0

6.0

7.0

9.0

4.0

5.0

8.0

10.0

FREQUENCY (GHz)

CONTROL VOLTAGE (Volts)

Speciﬁcations Subject to Change Without Notice.

M/A-COM, Inc.

North America: Tel. (800) 366-2266

Fax (800) 618-8883

■

Asia/Paciﬁc: Tel. +81 3 3263 8761

Fax +81 3 3263 8769

■

Europe: Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

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