SW-279RTR [TE]
High Power GaAs SPDT Switch DC - 2.5 GHz; 高功率砷化镓SPDT开关DC - 2.5 GHz的
| 型号： | SW-279RTR |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | High Power GaAs SPDT Switch DC - 2.5 GHz |
| 文件： | 总2页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Power GaAs SPDT Switch
DC - 2.5 GHz
SW-279
V2.00
Features
SO-8
PIN 8
• +36 dBm Typ. 1 dB Compression Point, -8V Supply
• +65 dBm Typ. 3rd Order Intercept Point, -8V Supply
• Low Insertion Loss: 0.4 dB Typical
• Low Power Consumption: 100 µW
• Fast Switching Speed
.2284-.2440
.1497-.1574
(3.80-4.00)
- B -
(5.80-6.20)
.010(0.25) M B M
Orientation
mark
PIN 1
.0099-0.0196
x 45° Chamfer
(0.25-0.50)
.1890-.1968
(4.80-5.00)
- A -
.0532-.0688
(1.35-1.75)
• Low Cost SOIC8 Plastic Package
0°-8°
1
- C -
• Tape and Reel Packaging Available
.004 (0.10)
.016-.050
(0.40-1.27)
.0040-.0098
(0.10-0.25)
Description
.0075-0.0098
(0.19-0.25)
.013-.020 TYP.
(0.33-0.51)
.050(1.27) BSC.
M/A-COM’s SW-279 is a GaAs MMIC SPDT switch in a low cost
SOIC 8-lead surface mount plastic package. The SW-279 is ideal-
ly suited for use where very low power consumption is
required. Typical applications include transmit/receive switch-
ing, switch matrices, and filter banks in systems such as: radio
and cellular equipment, PCM, GPS, fiber optic modules, and
other battery powered radio equipment.
.010(0.25) M C A M B S
8- Lead SOP outline dimensions
Narrow body .150
(All dimensions per JEDEC No. MS-012-AA, Issue C)
Dimensions in ( ) are in mm.
Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25)
.xx = ± 0.02 (.x = ±0.5)
Ordering Information
The SW-279 is fabricated with a monolithic GaAs MMIC using a
mature 1 micron process. The process features full chip passiva-
tion for increased performance and reliability.
Model No.
Package
SW-279 PIN
SW-279TR
SW-279RTR
SOIC 8 Lead
Forward Tape & Reel
Reverse Tape & Reel
Electrical Specifications, T = +25°C
A
Parameter
Test Conditions2
Unit
Min.
Typ.
Max
Insertion Loss
DC – 2.0 GHz
DC – 1.0 GHz
DC – 0.5 GHz
DC – 0.1 GHz
dB
dB
dB
dB
0.6
0.4
0.35
0.2
0.8
0.6
0.5
0.4
Isolation
VSWR
DC – 2.0 GHz
DC – 1.0 GHz
DC – 0.5 GHz
DC – 0.1 GHz
dB
dB
dB
dB
14
28
35
35
16
32
38
38
DC – 2.0 GHz
1.2:1
Trise, Tfall
Ton, Toff
Transients
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, 50% Control to 10% RF
In Band
nS
nS
mV
30
35
12
One dB
Compression Point
Input Power (5V Supply/Control)
Input Power (8V Supply/Control)
0.9 GHz
0.9 GHz
dBm
dBm
33
35.8
3rd Order
Intercept
Measured Relative (5V Supply/Control)
to Input Power (8V Supply/Control)
0.9 GHz
0.9 GHz
dBm
dBm
61
65
(for two-tone input power up to +10 dBm)
1. Refer to “Tape and Reel Packaging” Section, or contact factory.
2. All specifications apply when operated with bias voltages of 0V for Vin Low and 5 to 10V for Vin Hi, and 50 Ohm impedance at all RF ports,
unless otherwise specified. High power (greater than 1W) handling specifications apply to cold switches only. For input powers under 1W, hot
switching can be used. The high control voltage must be within +/- 0.2V of the supply voltage. The RF ports must be blocked outside of the
package from ground or any other voltage.
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
1
North America: Tel. (800) 366-2266
Fax (800) 618-8883
■
Asia/Pacific: Tel. +81 3 3263 8761
Fax +81 3 3263 8769
■
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
High Power GaAs SPDT Switch
Absolute Maximum Ratings
SW-279
V2.00
Two Tone IP Measurements
3
Input
Power
(dBm)
3rd Order
Second
Parameter
Absolute Maximum1
Bias
Intermodulation
IP3
Harmonic
Voltage
Products (dBC) (dBm) (dBc)
Max. Input Power
0.5 – 2.0 GHz
0,-5V
0,-6V
0,-7V
0,-8V
0,-10V
0,-5V
0,-6V
0,-7V
0,-8V
0,-10V
0,-5V
0,-6V
0,-7V
0,-8V
0,-10V
0,-5V
0,-6V
0,-7V
0,-8V
0,-10V
+27
+27
+27
+27
+27
+28
+28
+28
+28
+28
+29
+29
+29
+29
+29
+30
+30
+30
+30
+30
-34
-49
-64
-65
-66
-30
-41
-52
-60
-60
-28
-34
-44
-52
-52
-26
-32
-38
-44
-44
+44
+51
+59
+59
+60
+43
+48.5
+54
+58
+58
+43
+46
+51
+55
+55
+43
+46
+49
+52
+52
-61
-61
-63
-63
-63
-58
-58
-57
-57
-57
-54
-54
-54
-54
-54
-52
-51
-51
-51
-51
5V Control and Supply
8V Control and Supply
10V Control and Supply
+37 dBm
+40 dBm
+42 dBm
1.0 W
-12V, +1V
-40°C to +85°C
-65°C to +150°C
Power Dissipation
Control Voltage
Operating Temperature
Storage Temperature
Thermal Resistance2: θ = 87 °C/W
jc
1. Operation of this device above any one of these parameters may
cause permanent damage.
2. Thermal resistance is given for T = 25°C. T
is the temperature of
A
CASE
leads 1 and 4.
Pin Configuration
Functional Schematic
RF2
B
A
RF1
Pin No.
Description
8
7
6
5
1
2
3
4
5
6
7
8
GND, Thermal Contact
GND
RF Common
GND, Thermal Contact
RF1
A
Truth Table
Control Inputs1
Condition of Switch
B
RF Common to Each RF Port
RF2
1
2
3
4
A
1
0
B
0
1
RF1
On
RF2
Off
GND GND RFC GND
Thermal
Contact
Thermal
Contact
Off
On
1. 0 – 0 to -0.2V @ 20 µA max.
1 – -5V @ 50 µA Typ to -10V @ 800 µA max.
Typical Performance
ISOLATION VS FREQUENCY
ISERTION LOSS VS FREQUENCY
70
60
50
40
30
1.0
.75
+85°C
0.5
+25°C
20
10
0
0.25
-40°C
2.0
2.5
1.0
FREQUENCY (GHz)
0
0.5
1.5
0
1.5
FREQUENCY (GHz)
2.0
2.5
0
0.5
1.0
VSWR VS FREQUENCY
COMPRESSION VS CONTROL VOLTAGE (900 MHZ)
1.5
1.4
40
1.0 dB Compression
35
30
1.3
1.2
0.1 dB Compression
25
20
15
1.1
1.0
10
2.0
2.5
0
1.0
1.5
0.5
-3.0 -4.0 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0
FREQUENCY (GHz)
CONTROL VOLTAGE (Volts)
Specifications Subject to Change Without Notice.
2
M/A-COM, Inc.
North America: Tel. (800) 366-2266
Fax (800) 618-8883
■
Asia/Pacific: Tel. +81 3 3263 8761
Fax +81 3 3263 8769
■
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
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