SW-442 [TE]
GaAs SPDT Terminated Switch DC - 3.0 GHz; 砷化镓SPDT开关终止DC - 3.0 GHz的
| 型号： | SW-442 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaAs SPDT Terminated Switch DC - 3.0 GHz |
| 文件： | 总3页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SW-442
GaAs SPDT Terminated Switch
DC - 3.0 GHz
SOT-26 Plastic Package
Features
•
•
•
•
•
Low Cost Plastic SOT-26 Package
Low Insertion Loss <0.6 dB @ 900 MHz
High Isolation >38 dB @ 900 MHz
Low Power Consumption <10µA @ +3V
Positive or Negative 2.5 to 8 V Control
Description
XX#Y
M/A-COM’s SW-442 is a GaAs monolithic switch in a low cost
SOT-26 surface mount plastic package. The SW-442 is ideally
suited for applications where very low power consumption, low
insertion loss, very small size and low cost are required. Typical
application is in dual band systems where switching between
small signal components is required such as filter banks, single
band LNA's, converters etc. The SW-442 can be used in applica-
tions up to 0.25 Watts in systems such as CDMA, W-CDMA,
PCS, DCS1800, GSM and other analog/digital wireless commu-
nications systems.
PIN1
Ordering Information
The SW-442 is fabricated using a mature 0.8 micron GaAs
MESFET process. The process features full passivation for
increased performance and reliability.
Part Number
Package
SW-442 PIN
SW-442TR
SOT-26 Plastic Package
Forward Tape and Reel 1
Reverse Tape and Reel1
Sample Board
SW-442RTR
SW-442SMB
1. Reference Application Note M513 for reel size information.
Electrical Specifications TA = 25°C
Parameter
Insertion Loss
Test Conditions
Units
dB
dB
Min.
Typ.
0.5
0.8
Max.
0.7
1.0
DC - 1 GHz
1- 2 GHz
2 - 3 GHz
DC - 1 GHz
1 - 2 GHz
2 - 3 GHz
DC - 2 GHz
2 - 3 GHz
dB
dB
dB
dB
1.1
38
28
22
1.4:1
1.6:1
1.25
Isolation
VSWR
36
25
21
1.5:1
1.7:1
P1dB (2.7V supply)
P1dB (5V supply)
500 MHz - 3 GHz
500 MHz - 3 GHz
dBm
dBm
24
28
IP2 (2.7V supply)
IP3 (2.7V supply)
2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone
2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone
dBm
dBm
80
50
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, Control to 10% RF
In-Band
ns
ns
mV
40
60
10
Trise, Tfall
Ton, Toff
Transients
Gate Leakage
VCTL = 2.5V
µA
6
15
V2.00
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
GaAs SPDT Terminated Switch, DC - 3.0 GHz
SW-442
Absolute Maximum Ratings1
Functional Schematic
Positive Control Voltage
Parameter
Input Power (0.5 - 3.0 GHz)
3V Control
Absolute Maximum
+30 dBm
+33 dBm
C=39pF
C=100pF
C=100pF
5V Control
Operating Voltage
+8.5 Volts
V1
RFC
V2
Operating Temperature
Storage Temperature
-40°C to +85°C
-65°C to +150°C
1. Exceeding any one or combination of these limits may cause
permanent damage.
RF1
GND
RF2
PIN 1
CGND
C=39pF
C=39pF
Truth Table
Mode
(Control)
Positive1
V1
V2
RFC - RF1 RFC - RF2
Functional Schematic
Negative Control Voltage
0±0.2V
+2.5 to +8V
0±0.2V
+2.5 to +8V
0±0.2V
On
Off
Off
On
Off
On
On
Off
Negative2
-2.5V to -8V
0±0.2V
-2.5V to -8V
1. External DC blocking capacitors are required on all RF ports and
GND. GND capacitors can be used with postive control voltage to
resonate lead inductance for improved isolation.
V1
RFC
V2
2. If negative control is used, DC blocking capacitors and GND
capacitors are not required.
RF1
GND
RF2
PIN Configuration
PIN 1
PIN No.
Function
Description
RF in/out
1
2
3
4
5
6
RF1
GND
RF2
RF Ground
RF in/out
Handling Procedures
The following precautions should be observed to avoid damage:
V2
V Control 2
RF COMMON
V Control 1
Static Sensitivity
RFC
V1
Gallium Arsenide Integrated Circuits are ESD sensitive and can
be damaged by static electricity. Proper ESD techniques should
be used when handling these devices.
V2.00
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
GaAs SPDT Terminated Switch, DC - 3.0 GHz
SW-442
Typical Performance Curves
Output VSWR vs. Frequency over
Temperature
Input VSWR vs. Frequency over
Temperature
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
+85°C
-40°C
+85°C
+25°C
+25°C
-40°C
0
0.5
1
1.5
FREQUENCY (GHz)
2
2.5
3
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
Isolation Loss vs. Frequency over
Temperature (Postive Control)
Isolation Loss vs. Frequency over
Temperature (Negative Control)
50
45
40
35
30
25
20
15
10
5
60
55
50
45
40
35
30
25
20
15
10
CGND=39pF
CGND=8pF
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
FREQUENCY (GHz)
Insertion Loss vs. Frequency over
Temperature (Postive Control)
Insertion Loss vs. Frequency over
Temperature (Negative Control)
3
2.5
2
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
+25°C
CGND=39pF
+85°C
1.5
1
-40°C
CGND=8pF
0.5
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
FREQUENCY (GHz)
V2.00
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
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