SW-489TR [TE]
GaAs SP3T 2.5V High Power Switch DC - 2.5 GHz; 砷化镓SP3T 2.5V大功率开关DC - 2.5 GHz的型号: | SW-489TR |
厂家: | TE CONNECTIVITY |
描述: | GaAs SP3T 2.5V High Power Switch DC - 2.5 GHz |
文件: | 总5页 (文件大小:256K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GaAs SP3T 2.5V High Power Switch
Feb 12 2002
DC - 2.5 GHz
Preliminary
Features
Functional Schematic
•
•
•
•
•
•
Low Voltage Operation 2.5V
Low Harmonics > 65 dBc at +34 dBm & 1 GHz
Low Insertion Loss 0.5 dB at 1 GHz
High Isolation 18.5 dB at 2 GHz
Miniature FQFP 12-lead 3x3mm Package
0.5 micron GaAs pHEMT Process
PIN 12
PIN 1
V3
V1
RF3
RF1
Description
100 pF
100 pF
M/A-COM’s SW-489 is a GaAs PHEMT MMIC single
pole three throw (SP3T) high power switch in a low cost
miniature FQFP 12-lead 3x3mm thin profile package.
The SW-489 is ideally suited for applications where high
power, low control voltage, low insertion loss, high isola-
tion, small size and low cost are required. Typical appli-
cations are for GSM and DCS handset systems that con-
nect separate transmit and receive functions to a com-
mon antenna, as well as other handset and related appli-
cations. This part can be used in all systems operating
up to 2.5 GHz requiring high power at low control volt-
age.
GND
GND
Pin Configuration
The SW-489 is fabricated using a 0.5 micron gate length
GaAs PHEMT process. The process features full pas-
sivation for performance and reliability.
PIN
PIN Name
Description
No.
1
2
V3
RF3
Control 3
RF Port 3
Absolute Maximum Ratings 1
3
GND
GND
RF2
RF Ground
RF Ground
RF Port 2
4
Parameter
Absolute
Maximum
5
6
V2
Control 2
Max Input Power (0.5 - 2.5 GHz,
2.5V Control)
+38 dBm
7
GND
RF1
RF Ground
RF Port 1
Operating Voltage
+8.5 volts
-40 oC to +85 oC
-65 oC to +150 oC
8
Operating Temperature
9
V1
Control 1
Storage Temperature
10
11
12
13
GND
ANT
RF Ground
Antenna Port
RF Ground
RF Ground
1. Exceeding any one or combination of these limits may
cause permanent damage.
GND
GND (paddle)
GaAs SP3T 2.5V High Power Switch
SW-489
V 1.04
Electrical Specifications: TA = 25°C, Z0 = 50Ω 2
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
DC – 1 GHz
1 – 2 GHz
dB
dB
dB
0.5
0.6
0.8
0.65
0.8
2 - 2.5 GHz
1.0
Isolation
DC – 1 GHz
1 – 2 GHz
dB
dB
dB
23
18
15
25
18.5
16
2 - 2.5 GHz
Return Loss
P1dB
DC – 2.5 GHz
dB
dBm
dBc
dBc
µS
20
Vc = 0V/2.5V
38
2nd Harmonic
3rd Harmonic
Trise, Tfall
1 GHz, PIN = +34 dBm, Vc = 0V/2.5V
1 GHz, PIN = +34 dBm, Vc = 0V/2.5V
10% to 90% RF, 90% to 10% RF
65
65
1
Cross Modulation
ANT - CELL3
Two Tone +22 dBm, 1 MHz Spacing, 820 MHz,
Two Tone +19 dBm, 1 MHz Spacing, 1950 MHz,
dBm
dBm
59
57
ANT - PCS3
Cross Modulation
ANT - CELL
Two Tones +22 dBm @ 820 & 821 MHz,
One Tone –27 dBm @ 865 MHz
dBm
dBm
-108
TBD
ANT - PCS
Two Tones +17 dBm @ 1950 & 1951 MHz,
One Tone –27 dBm @ 1870 MHz
Ton, Toff
50% control to 90% RF, and 50% control to 10% RF
µS
mV
uA
1
Transients
Gate Leakage
In Band
10
|Vc| = 2.5V
100
2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 100 pF for
0.5 GHz - 2.5 GHz.
3. IP3 slope versus input power is approximately 1.5:1.
Truth Table 4
V1
V2
V3
ANT– RF1
ANT - RF2
ANT - RF3
+2.5 to +5V
0 + 0.2V
0 + 0.2V
+2.5 to +5V
0 + 0.2V
0 + 0.2V
0 + 0.2V
On
Off
Off
Off
On
Off
Off
Off
On
0 + 0.2V
+2.5 to +5V
4. External DC blocking capacitors are required on all RF ports
2
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
GaAs SP3T 2.5V High Power Switch
Typical Performance Curves
SW-489
V 1.04
Insertion Loss vs. Frequency,
25 oC, 100 pF
Isolation vs. Frequency,
25 oC, 100 pF
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0
-5
-10
-15
-20
-25
-30
-35
0.5
1
1.5
2
2.5
0.5
1
1.5
2
2.5
Frequency (GHz)
Frequency (GHz)
Harmonic Rejection vs. Frequency,
25 oC, 100 pF
-60
Pin = +34 dBm @ 1 GHz
-65
-70
3rd Harmonic
-75
-80
-85
2nd Harmonic
2
3
4
5
Vctrl (V)
3
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
GaAs SP3T 2.5V High Power Switch
FQFP 12-lead 3x3 mm
SW-489
V 1.04
4
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
GaAs SP3T 2.5V High Power Switch
Handling Procedures
SW-489
V 1.04
The following precautions should be observed to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are ESD sensitive
and can be damaged by static electricity. Proper ESD
techniques should be used when handling these devices.
Ordering Information
Part Number
Package
SW-489
FQFP-N 12-lead Plastic Package
SW-489TR
1000 piece reel
SW-489SMB
Sample Test Board
5
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
相关型号:
©2020 ICPDF网 联系我们和版权申明