TVB200SC_04 [TE]

Thyristor Surge Protectors; 晶闸管浪涌保护器
TVB200SC_04
型号: TVB200SC_04
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

Thyristor Surge Protectors
晶闸管浪涌保护器

文件: 总2页 (文件大小:73K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Tyco / Electronics  
Raychem Circuit Protection  
308 Constitution Drive  
Menlo Park, CA 94025-1164  
Phone: 800-227-4856  
PRODUCT: TVB200SC  
SiBar™  
Thyristor Surge Protectors  
DOCUMENT: SCD 24272  
PCN: 860265  
REV LETTER: C  
REV DATE: AUGUST 24, 2004  
PAGE NO.: 1 OF 2  
Fax: 800-227-4866  
Specification Status: RELEASED  
PHYSICAL DESCRIPTION  
Marking:  
Date Code  
RDBD  
Device Code  
Raychem Logo  
A
B
C
D**  
H
J
K
MIN  
4.06  
MAX  
4.57  
MIN  
3.30  
MAX  
3.81  
MIN  
1.90  
MAX  
2.41  
MIN  
1.96  
MAX  
2.11  
MIN  
0.051 0.152  
MAX  
MIN  
0.15  
MAX  
0.30  
MIN  
0.76  
MAX  
1.27  
mm:  
in*: (0.160) (0.180) (0.130) (0.150) (0.075) (0.095) (0.077) (0.083) (0.002) (0.006) (0.006) (0.012) (0.030) (0.050)  
P
S
REF  
0.51  
MIN  
5.21  
MAX  
5.59  
mm:  
in*: (0.020) (0.205) (0.220)  
* Rounded off approximation  
** D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P  
Other Physical Characteristics  
Form Factor:  
SMB (Surface Mount, JEDEC DO-214AA Package)  
Lead Material:  
Tin / lead finish  
Encapsulation Material:  
Solderability:  
Solder Heat Withstand:  
Solvent Resistance:  
Mechanical Shock:  
Vibration:  
Epoxy, meets UL94 V-0 requirements  
per MIL-STD-750, Method 2026  
per MIL-STD-750, Method 2031  
per MIL-STD-750, Method 1022  
per MIL-STD-750, Method 2016  
per MIL-STD-750, Method 2056  
Tape and Reel packaging per EIA 481-1  
Agency Recognition:  
Precedence:  
UL  
This specification takes precedence over documents referenced herein.  
CAUTION:  
Operation beyond the rated voltage or current may result in rupture, electrical arcing or flame.  
Materials Information  
ELV Compliant  
© 2004 Tyco Electronics Corporation. All rights reserved.  
Tyco / Electronics  
Raychem Circuit Protection  
308 Constitution Drive  
Menlo Park, CA 94025-1164  
Phone: 800-227-4856  
PRODUCT: TVB200SC  
SiBar™  
Thyristor Surge Protectors  
DOCUMENT: SCD 24272  
PCN: 860265  
REV LETTER: C  
REV DATE: AUGUST 24, 2004  
PAGE NO.: 2 OF 2  
Fax: 800-227-4866  
DEVICE RATINGS @ 25º C (Both Polarities)  
Parameter  
Repetitive Off-State Voltage, Maximum at ID = 5 µA  
Symbol  
VDM  
IPP1  
Value  
Units  
200  
100  
150  
200  
500  
400  
150  
150  
V
Non-Repetitive Peak  
Impulse Current  
Double exponential  
Waveform  
Telcordia GR-1089 CORE 10x1000 µs  
A
A
A
A
A
A
A
TIA-968 lightning Type A Metallic 10/560 µs  
TIA-968 lightning Type A Longit. 10/160 µs  
Telcordia GR-1089 Intrabuilding 2/10 µs  
IEC61000-4-5 (Voc 1.2/50us) 8/20 µs  
IPP2  
IPP3  
IPP4  
IPP5  
IPP6  
IPP7  
(Notes 1 and 2)  
ITU-T K.20/K.21 (Voc 10/700us) 5/310 µs  
TIA-968 lightning Type B (Voc 9/720us) 5/320 µs  
Critical Rate of Rise of On-State Current  
Powered Pulse Amplifier, C=30µF, V=600V  
Maximum 2x10 µsec waveform, VOC=2.5kV, ISC=500A peak  
di/dt  
di/dt  
500  
330  
A/µs  
A/µs  
DEVICE THERMAL RATINGS  
Storage Temperature Range  
Operating Temperature Range  
TSTG  
TA  
-55 to 150  
-40 to 125  
ºC  
ºC  
Blocking or conducting state  
Overload Junction Temperature  
Maximum; Conducting state only  
Maximum Lead Temperature for Soldering Purpose; for 10 seconds  
TJ  
TL  
+150  
+260  
ºC  
ºC  
ELECTRICAL CHARACTERISTICS Both polarities (TJ @ 25ºC unless otherwise noted)  
Characteristics  
Symbol  
Min  
Typ  
Max  
Units  
Breakover Voltage  
(+25°C)  
VBO  
----  
260  
320  
V
(dv/dt = 0.4kV/µs, ISC=900mA VDC =500V (both polarities))  
Breakover Voltage Temperature Coefficient  
Off-State Current  
dVBO/dTJ  
ID1  
ID2=IDM  
----  
----  
----  
----  
0.1  
-----  
-----  
-----  
-----  
2.0  
5.0  
4.0  
%/ºC  
µA  
µA  
V
(VD1= 50V)  
(VD2=VDM)  
On-State Voltage  
(IT=1A)  
VT  
(PW 300 µsec, Duty Cycle 2% (Note 2))  
Breakover Current  
Holding Current (Note 2)  
Peak Onstage Surge Current  
(Measured @ 60Hz, 1 cycle, 600V)  
Critical Rate of Rise of Off-State Voltage  
IBO  
IH  
ITSM  
----  
150  
60  
-----  
----  
----  
800  
----  
----  
mA  
mA  
A
dv/dt  
2000  
----  
----  
V/µs  
(Linear waveform, VD = 0.8 X Rated VBO, TJ= +25ºC)  
Capacitance (f=1.0 Mhz, 50Vdc bias, 1Vrms)  
(f=1.0 Mhz, 2Vdc bias, 1Vrms)  
C1  
C2  
----  
----  
55  
115  
----  
----  
pF  
pF  
Note 1. Allow cooling before test second polarity  
Note 2. Measured under pulse conditions to reduce heating  
VOLTAGE-CURRENT CHARACTERISTIC  

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