BC328 [TGS]
TO-92 Plastic-Encapsulate Transistors (PNP); TO- 92塑封装晶体管( PNP )![BC328](http://pdffile.icpdf.com/pdf1/p00170/img/icpdf/BC328_951930_icpdf.jpg)
型号: | BC328 |
厂家: | ![]() |
描述: | TO-92 Plastic-Encapsulate Transistors (PNP) |
文件: | 总1页 (文件大小:236K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
BC327/ BC328
TRANSISTOR (PNP)
TO-92
FEATURES
1. COLLECTOR
2.BASE
Power dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
3. EMITTER
Unit
Collector-Base Voltage
BC327
BC328
-50
-30
-45
-25
-5
V
VCEO
Collector-Emitter Voltage BC327
V
BC328
VEBO
IC
Emitter-Base Voltage
V
Collector Current -Continuous
-800
625
mA
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature
mW
Tj
150
℃
℃
Tstg
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
IC= -100uA, IE=0
Min
Typ
Max
Unit
Collector-base breakdown voltage
BC327
BC328
VCBO
-50
-30
V
Collector-emitter breakdown voltage
IC= -10mA , IB=0
BC327
BC328
VCEO
VEBO
ICBO
-45
-25
V
V
Emitter-base breakdown voltage
IE= -10uA, IC=0
-5
Collector cut-off current
BC327
BC328
VCB= -45 V , IE=0
VCB= -25V , IE=0
-0.1
-0.1
uA
Collector cut-off current
BC327
BC328
ICEO
VCE= -40 V , IB=0
CE= -20 V , IB=0
VEB= -4 V , IC=0
-0.2
-0.2
uA
uA
V
Emitter cut-off current
DC current gain
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
-0.1
VCE=-1 V, IC= -100mA
VCE=-1 V, IC= -300mA
IC=-500mA, IB= -50mA
IC= -500mA, IB=-50mA
VCE=-1 V, IC= -300mA
100
40
630
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
-0.7
-1.2
-1.2
V
V
V
V
CE= -5V, IC= -10mA
f = 100MHz
CB=-10V,IE=0
f=1MHZ
Transition frequency
fT
260
MHz
pF
V
Collector Output Capacitance
Cob
12
CLASSIFICATION OF hFE
Rank
16
100-250
25
40
250-630
Range
160-400
A,May,2011
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TRANSISTOR 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
NXP
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