BC548 [TGS]
TO-92 Plastic-Encapsulate Transistors (NPN); TO- 92塑封装晶体管( NPN )![BC548](http://pdffile.icpdf.com/pdf2/p00206/img/icpdf/BC548_1167834_icpdf.jpg)
型号: | BC548 |
厂家: | ![]() |
描述: | TO-92 Plastic-Encapsulate Transistors (NPN) |
文件: | 总1页 (文件大小:304K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
BC546/BC547/BC548 TRANSISTOR (NPN)
TO-92
FEATURES
z
High Voltage
Complement to BC556,BC557,BC558
1. COLLECTOR
2. BASE
z
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
3. EMITTER
Collector-Base Voltage
BC546
BC547
BC548
80
50
30
VCBO
V
Collector-Emitter Voltage
Emitter-Base Voltage
BC546
BC547
BC548
65
45
30
V
VCEO
6
100
VEBO
IC
V
mA
mW
℃
Collector Current -Continuous
Total Device Dissipation
Junction Temperature
625
PD
150
TJ
Storage Temperature
-55-150
Tstg
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Max
Unit
Collector-base breakdown voltage
BC546
BC547
BC548
80
50
30
VCBO
IC= 100μA , IE=0
V
Collector-emitter breakdown voltage
BC546
BC547
BC548
65
45
30
VCEO
VEBO
ICBO
IC= 1mA , IB=0
V
V
Emitter-base breakdown voltage
Collector cut-off current
IE= 10μA, IC=0
6
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
VCB= 70V, IE=0
0.1
V
V
CB= 50 V, IE=0
CB= 30V, IE=0
μA
Collector cut-off current
Emitter cut-off current
DC current gain
VCE= 60 V, IB=0
ICEO
V
V
CE= 45 V, IB=0
CE= 30 V, IB=0
0.1
0.1
μA
μA
IEBO
VEB= 5V, IC=0
110
110
110
110
200
420
800
800
800
220
450
800
hFE
VCE=5V, IC= 2mA
BC546A/BC547A/BC548A
BC546B/BC547B/BC548B
BC546C/BC547C/BC548C
Collector-emitter saturation voltage
VCE(sat)
VBE(sat)
IC=100mA, IB= 5mA
IC= 100mA, IB=5mA
0.3
1.1
V
V
Base-emitter saturation voltage
Transition frequency
VCE= 5V, IC= 10mA
fT
150
MHz
f = 100MHz
A,May,2011
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