BD140 [TGS]
Complementary Silicon Power Ttransistors; 互补硅功率Ttransistors
| 型号： | BD140 |
| 厂家： | 
Tiger Electronic Co.,Ltd |
| 描述： | Complementary Silicon Power Ttransistors |
| 文件： | 总1页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIGER ELECTRONIC CO.,LTD
Product specification
BD139 / BD140
Complementary Silicon Power Ttransistors
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Value Unit
l
VCBO
80
V
VCEO
VEBO
IC
80
5
V
V
1.5
0.5
12.5
150
A
Base Current
IB
A
Total Dissipation at
Ptot
Tj
W
oC
Max. Operating Junction Temperature
Storage Temperature
TO-126
Tstg
-55~150 oC
O
ELECTRICAL CHARACTERISTICS
( Ta = 25 C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Symbol
Test Conditions
Min.
—
Typ.
—
Max. Unit
ICEO
IEBO
VCB=80V, IE=0
VEB=5V, IC=0
10
10
uA
uA
V
—
—
VCEO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Collector-Emitter Sustaining Voltage
DC Current Gain
IC=30mA, IB=0
80
—
—
—
—
—
—
—
—
VCE=2V, IC=0.5A
VCE=2V, IC=150mA
IC=0.5A,IB=50mA
VCE=2V,IC=0.5A
25
40
250
0.5
1.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V
V
—
—
3
VCE=10V,IC=500mA
MHz
—
相关型号：
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