KSC5027 [TGS]

High Voltage and High Reliability; 高电压和高可靠性


型号：	KSC5027
厂家：	Tiger Electronic Co.,Ltd
描述：	High Voltage and High Reliability 高电压和高可靠性晶体晶体管开关局域网
文件：	总1页 (文件大小：58K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TIGER ELECTRONIC CO.,LTD

Product specification

KSC5027

High Voltage and High Reliability

DESCRIPTION

■

NPN Silicon Transistor

■

High Speed Switching

■

Wide SOA

℃

Absolute Maximum Ratings ( Ta = 25

)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Value Unit

V_CBO

1100

V_CEO

V_EBO

I_C

800

7.0

3.0

1.5

Base Current

I_B

Total Dissipation at

P_tot

T_j

^oC

150

Max. Operating Junction Temperature

Storage Temperature

TO-220

T_stg

-55~150 ^oC

℃

Electrical Characteristics ( Ta = 25

)

Parameter

Symbol

Test Conditions

Min.

—

Typ.

—

Max. Unit

Collector Cut-off Current

I_CBO

V_CE=800V, I_E=0

V_EB=5V, I_C=0

I_C=10mA, I_B=0

I_EBO

Emitter Cut-off Current

—

V_CEO

h_FE(1)

h_FE(2)

Collector-Emitter Sustaining Voltage

800

—

V_CE=5V, I_C=0.2A

V_CE=5V, I_C=1.0A

—

DC Current Gain

V_CE(sat)

V_BE(sat)

f_T

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

I_C=1.5A,I_B=0.3A

V_CE=10V, I_C=0.2A

2.0

1.5

—

MHz

Output Capacitance

Turn Off Time

V_CB=10V,I_E=0,f=1.0MHz

I_C=5I_B1=-2.5I_B2=2.0A,

C_ob

—

3.0

t_S

—

h_FEClassification

Classification

h_FE1

10 ~ 20

15 ~ 30

20 ~ 40

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暂无描述

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