KTC3202 [TGS]
TO-92 Plastic-Encapsulate Transistors (NPN); TO- 92塑封装晶体管（ NPN ）
| 型号： | KTC3202 |
| 厂家： | 
Tiger Electronic Co.,Ltd |
| 描述： | TO-92 Plastic-Encapsulate Transistors (NPN) |
| 文件： | 总1页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
KTC3202
TRANSISTOR (NPN)
TO-92
FEATURES
1. EMITTER
2. COLLECTOR
3. BASE
General Purpose Application Switching Application
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Value
35
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
500
625
150
-55-150
mA
mW
℃
PC
TJ
Storage Temperature
Tstg
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
V
Collector-BASE breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC = 0.1mA, IB=0
V(BR)CEO IC = 1mA, IB=0
35
30
5
V
V(BR)EBO
ICBO
IE= 0.1mA, IC=0
V
VCB= 35V, IE=0
0.1
0.1
μA
μA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
hFE(1)
hFE(2)
VCE(sat)
VCE= 1V, IC= 100mA
VCE= 6V, IC= 400mA
IC=100mA, IB= 10mA
70
25
400
DC current gain
Collector-emitter saturation voltage
Base-Emitter Saturation Voltage
Transition frequency
0.25
1.0
V
V
VBE
fT
VCE=1V, IC= 100mA
VCE= 6V, IC= 20mA
VCB= 6V, IE= 0,f=1 MHz
300
7.0
MHz
pF
Collector Output Capacitance
Cob
CLASSIFICATION OF hFE
Rank
O
Y
120-240
40
GR
70-140
25
Range hFE(1)
Range hFE(2)
A,June,2011
相关型号：
KTC3202-BP
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
MCC
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