IRFS640B [TGS]

200V N-Channel MOSFET; 200V N沟道MOSFET
IRFS640B
元器件型号: IRFS640B
生产厂家: Tiger Electronic Co.,Ltd    Tiger Electronic Co.,Ltd
描述和应用:

200V N-Channel MOSFET
200V N沟道MOSFET

晶体 晶体管 开关 脉冲 局域网
PDF文件: 总1页 (文件大小:23K)
下载文档:  下载PDF数据表文档文件
型号参数:IRFS640B参数

IRFS640B_FP001

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220F, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 FAIRCHILD

IRFS640B_FP001

18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, TO-220F, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 ROCHESTER

IRFS641

Improved inductive ruggedness

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
21 SAMSUNG

IRFS641

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 9.8A I(D) | SOT-186

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
27 ETC

IRFS641

Power Field-Effect Transistor, 9.8A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 SAMSUNG

IRFS642

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 SAMSUNG

IRFS644

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8.5A I(D) | TO-220VAR

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
34 ETC

IRFS644A

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7.9A I(D) | TO-220AB

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
84 ETC

IRFS644A

Advanced Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
34 FAIRCHILD

IRFS644B

250V N-Channel MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
59 FAIRCHILD

IRFS645

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7.4A I(D) | TO-220VAR

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
49 ETC

IRFS645

Power Field-Effect Transistor, 7.4A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 SAMSUNG

IRFS650A

Advanced Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
37 FAIRCHILD

IRFS650A

Advanced Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
11 FAIRCHILD

IRFS650B

200V N-Channel MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
44 FAIRCHILD