307UR80 [THINKISEMI]
ThinkiSemi 330A,1600V Rotating Rectifier Stud Type Standard Recovery Diode;型号: | 307UR80 |
厂家: | Thinki Semiconductor Co., Ltd. |
描述: | ThinkiSemi 330A,1600V Rotating Rectifier Stud Type Standard Recovery Diode 高压大电源 高功率电源 二极管 |
文件: | 总7页 (文件大小:2015K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
307U160/307UR160
307U160/307UR160
Pb Free Plating Product
ThinkiSemi 330A,1600V Rotating Rectifier Stud Type Standard Recovery Diode
Features
Wide current range
IF(AV)
VRRM
IFSM
I2t
330A
1600V
High voltage ratings up to 2500V
High surge current capabilities
8.25 KA
64 KA2S
Stud cathode and stud anode version
TypicalApplications
Converters
Power supplies
Machine tool controls
High power drives
CERAMIC HOUSING
19 (0.75) MAX.
Medium traction applications
Major Ratings and Characteristics
DIA. 8.5 (0.33
307U80/307U120/307U160/307U200/307U250
307UR80/307UR120/307UR160/307UR200/307UR250
Parameters
Units
80 to 200
250
IF(AV)
330
300
A
°C
A
@ TC
120
120
IF(RMS)
IFSM
520
470
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
8250
6050
6335
183
A
8640
A
I2t
340
KA2s
KA2s
V
3/4"-16UNF-2A
311
167
VRRM range
TJ
800 to 2000
- 40 to 180
2500
- 40 to 180
°C
All dimensions in millimeters (inches)
Page 1/7
http://www.thinkisemi.com.tw/
Rev.12T
© 1995 Thinki Semiconductor Co., Ltd.
307U160/307UR160
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM , maximum repetitive
VRSM , maximum non-
IRRM max.
@ TJ = TJ max.
mA
Type number
peak reverse voltage
repetitive peak rev. voltage
V
V
307U80/307UR80
307U120/307UR120
307U160/307UR160
80
800
900
120
160
200
250
1200
1600
2000
2500
1300
1700
2100
2600
15
307U200/307UR200
307U250/307UR250
Forward Conduction
307U(R)
Parameter
Units Conditions
80to200 250
IF(AV) Max. average forward current
@ Case temperature
330
120
300
120
A
180° conduction, half sine wave
°C
IF(RMS) Max. RMS forward current
520
8250
8640
6940
7270
340
470
6050
6335
5090
5330
183
A
DC @ TC = 115°C (08 to 20), TC = 102°C (25)
IFSM
Max. peak, one-cycle forward,
non-repetitive surge current
t = 10ms
t = 8.3ms
t = 10ms
No voltage
reapplied
A
100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
t = 10ms
t = 8.3ms
t = 10ms
No voltage
reapplied
311
167
KA2s
241
220
129
118
100% VRRM
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
3400
1830
KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
0.77
0.90
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
voltage
V
VF(TO)2 High level value of threshold
voltage
0.84
0.49
0.97
0.59
(I > π x IF(AV)),TJ = TJ max.
r
Low level value of forward
slope resistance
1
f
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
f
0.49
1.22
0.55
1.46
(I > π x IF(AV)),TJ = TJ max.
VFM
Max. forward voltage drop
V
I = 942A, TJ = TJ max, t = 10ms sinusoidal wave
pk p
Page 2/7
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Rev.12T
© 1995 Thinki Semiconductor Co., Ltd.
307U160/307UR160
Thermal and Mechanical Specifications
Parameter
307U(R)
-40 to 180
-40 to 200
Units Conditions
°C
TJ
T
Max. junction operating temperature range
Max. storage temperature range
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
0.14
0.08
37
DC operation
K/W
Mounting surface, smooth, flat and greased
T
Max. allowed mounting torque +0 -20%
Not lubricated threads
Lubricated threads
Nm
28
wt
Weight
301U(R)
250± 5
152± 5
177± 5g
197± 5
160± 5
303U(R)
305U(R)
307U(R)
309U(R)
Case style
DO-205AB (DO-9)
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
80 to 200
0.015
250
00 to 200
0.011
250
180°
120°
90°
0.015
0.018
0.023
0.034
0.056
0.011
0.019
0.025
0.035
0.057
0.018
0.019
0.023
0.025
60°
0.034
0.035
30°
0.056
0.057
Ordering Information Table
Device Code
30
1
U
A
250 P5
3
1
2
4
5
6
1
2
-
-
30
1
= Essential Part Number
= Standard Device
3
= Top Threaded version
5
= Type for rotating application with Top Threaded
version 3/8 16UNC-2A
7
9
= Type for rotating application with flexible lead
= Type for rotating application with Top Threaded
version 3/8 24UNF
3
4
-
-
U
= Stud Normal Polarity (Cathode to Stud)
UR = Stud Reverse Polarity (Anode to Stud)
= Max. Leakage selection IRRM = 2mA TJ = 25°C
IFM
VFM
VFM
A
RANGE TJ = 25°C min. max.
None = Std. Leakage selection IRRM= 10mA TJ = 25°C
Voltage code: Code x 10=VRRM (See Voltage Ratings table)
(A)
(V)
(V)
5
6
-
-
P2 *
P3 *
P4
1.16 1.25
1.26 1.30
1.31 1.40
1.41 1.45
P.
= Forward selection
1000
None = Standard Forward selection
P5
* 2500V not available
Page 3/7
http://www.thinkisemi.com.tw/
Rev.12T
© 1995 Thinki Semiconductor Co., Ltd.
307U160/307UR160
180
180
170
160
150
140
130
120
110
100
307U(R) Series(800V to 2000V)
307U(R) Series (800V to 2000V)
(DC) = 0.14 K/W
R
(DC) = 0.14 K/W
R
thJC
170
160
150
140
130
120
110
thJC
Conduction Angle
Conduction Period
30°
60°
90°
120°
30°
180°
60°
90°
120°
180°
DC
0
50 100 150 200 250 300 350
Average Forward Current (A)
0
100 200 300 400 500 600
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig.2 - Current Ratings Characteristics
180
170
160
150
140
130
120
110
100
90
180
307U(R) Series (2500V)
307U(R) Series (2500V)
R
(DC) = 0.14 K/W
R
(DC) = 0.14 K/W
170
160
150
140
130
120
110
thJC
thJC
Conduction Period
Conduction Angle
30°
30°
60°
60°
90°
90°
120°
120°
180°
180°
DC
400
0
50 100 150 200 250 300 350
Average Forward Current (A)
0
100
200
300
500
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
400
180°
120°
90°
60°
30°
350
300
250
200
150
100
50
RMSLim it
0
.
7
K
/
W
W
Conduction Angle
1
.
5
K
/
307U(R) Series
(800V to 2000V)
T = 180°C
J
0
0
50 100 150 200 250 300 350 40 60 80 100 120 140 160 180
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
Page 4/7
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Rev.12T
© 1995 Thinki Semiconductor Co., Ltd.
307U160/307UR160
550
DC
180°
500
450
400
350
300
250
200
150
100
50
120°
90°
60°
30°
RMS Lim it
Conduction Period
307U(R) Series
(800V to 2000V)
T = 180°C
J
0
0
100 200 300 400 500 600 40 60 80 100 120 140 160 180
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 6 - Forward Power Loss Characteristics
450
180°
120°
90°
60°
30°
400
350
300
250
200
150
100
50
RMSLimit
0
.
7
K
/
W
W
Conduction Angle
1
.
5
K
/
307U(R) Series (2500V)
T = 180°C
J
0
0
50
100 150 200 250 300 40 60 80 100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
600
500
400
300
200
100
0
DC
180°
120°
90°
60°
30°
t
h
S
A
0
.
2
K
/
W
0
.
3
K
/
W
RMSLim it
Conduction Period
307U(R) Series (2500V)
T = 180°C
J
0
100
200
300
400
500 40 60 80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
Page 5/7
http://www.thinkisemi.com.tw/
Rev.12T
© 1995 Thinki Semiconductor Co., Ltd.
307U160/307UR160
8000
9000
8000
7000
6000
5000
4000
3000
2000
1000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initial T = 180 °C
7000
6000
5000
4000
3000
2000
J
Initial T = 180°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
No Voltage Reapplied
Rated V
Reapplied
RRM
307U(R) Series
(800V to 2000V)
307U(R) Series
(800V to 2000V)
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude HalfCycle Current Pulses(N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
6000
6000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
At Any Rated Load Condition And With
5500
5000
4500
4000
3500
3000
2500
2000
1500
Rated V
Applied Following Surge.
RRM
Initial T = 180°C
J
Initial T = 180°C
J
5000
4000
3000
2000
1000
No Voltage Reapplied
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Rated V
Reapplied
RRM
307U(R) Series (2500V)
10
307U(R) Series(2500V)
1
100
0.01
0.1
1
NumberOf Equal Amplitude Half Cycle Current Pulses(N)
Pulse Train Duration (s)
Fig. 11 - Maximum Non-Repetitive Surge Current
Fig. 12 - Maximum Non-Repetitive Surge Current
Page 6/7
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Rev.12T
© 1995 Thinki Semiconductor Co., Ltd.
307U160/307UR160
10000
10000
1000
100
T = 25°C
J
T = 25° C
J
T = 180°C
J
T = 180°C
J
1000
100
307U(R) Series
(800V to 2000V)
307U(R) Series(2500V)
10
10
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
3.5
InstantaneousForward Voltage (V)
InstantaneousForward Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
Fig. 14 - Forward Voltage Drop Characteristics
1
Steady State Value:
R
= 0.14 K/ W
thJC
(DC Operation)
0.1
0.01
307U(R) Series
0.001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 15 - Thermal Impedance ZthJC Characteristic
Page 7/7
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Rev.12T
© 1995 Thinki Semiconductor Co., Ltd.
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