BA30ZP
更新时间：2024-09-18 22:13:05
品牌：THINKISEMI
描述：30 Ampere Avalanche Type Block Rectifier Diodes for Mitsubishi Alternator
概述
数据手册BA30ZP 概述
30 Ampere Avalanche Type Block Rectifier Diodes for Mitsubishi Alternator
BA30ZP 数据手册
通过下载BA30ZP数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载BA30ZP/BA30ZN
BA30ZP/BA30ZN
Pb Free Plating Product
30 Ampere Avalanche Type Block Rectifier Diodes for Mitsubishi Alternator
BLOCK/TO-230/BA/MR/K series
Feature:
ꢀ Low leakage
ꢀ Low forward voltage drop
ꢀ High current capability
ꢀ High forward surge current capability
Application:
Block Diode/Alternator Diode with AEC-Q101 Grade Quality
ꢀ
ꢀ
Stack Silicon Diffused Diode alternative
Special for Automotive AC Alternator rectifier application
ꢀ
Mechanical Data:
ꢀ Technology: Latest Glass Passivation Pellet/Cu Clip Bonding
ꢀ Case: Vacuum soldered/Sintered temperature < 260
ꢀ Cathode Polarity: As marked on body
ꢀ Lead: Plated lead, solderable per MIL-STD-202E method 208C
ꢀ Mounting: BLOCK/TO-230/BA/MR/K series package type
℃
Case
Lead
Case
Lead
BA30ZP
Positive
Suffix:"P"
BA30ZN
Negative
Suffix:"N"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
·
·
·
Ratings at 25℃ ambient temperature unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load
For capacitive load derate current by 20%
BA30ZP/BA30ZN
Electrical Characteristics @ 25℃
SYMBOLS
MIN
NOMINAL
MAX
UNITS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
VRRM
VRRM
VRSM
VDC
20
20
20
Volts
Transient Peak Reverse Voltage
DC Blocking Voltage
30
Average Rectified Forward Current (Tc=125℃)
Io
Amps
Amps
Repetitive Peak Reverse Surge Current
Tc=10msec Dury Cycle＜1%
IRSM
Vbr1
30
Breakdown Voltage (Vbr@ir=100mA, Tc=25℃)
24
25 -27
32
40
Volts
Volts
Vz
Zener Voltage
Vbr2
VF
IFSM
IR
Ir=90Amps, Tc=150℃, PW=80usec
Forward Voltage Drop @If=100Amps＜300usec
1.05
400
1.10
2.0
Volts
Amps
uAmps
℃
Peak Forward Surge Current
Reverse Leakage (VR=17Vdc) TA=25℃
Operating and Storage Junction Temperature Range
1.0
TJ ,TSTG
-65 to +175
Notes: 1. Enough heatsink must be considered in application.
Page 1/3
http://www.thinkisemi.com.tw/
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
BA30ZP/BA30ZN
IRRM (EXP)
IRRM (EXP)
0 10
30
50
Surge current characteristics
I F - VF
1000
100
10
1
0.7
0.8
0.9
1
1.1
1.2
FORWARD VOLTAGE V
(V)
F
I F(AV) - Ta
40
Ta=Tc
30
20
10
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta ( C)
.
.
.
Page 2/3
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
BA30ZP/BA30ZN
BLOCK/TO-230/BA/MR/K Series Package Outline
A3
A2
A1
D3
E
F
G
DIM MILLIMETERS DIM MILLIMETERS
_
_
+
5.0 0.3
+
A1
A2
A3
B1
B2
C1
C2
D1
10.0 0.3
D2
D3
E
F
G
_
_
+
+
13.5 0.3
4.5 0.3
_
_
+
+
24.0 0.5
1.9 0.3
_
_
+
+
8.5 0.3
9.0 0.3
_
_
+
+
10.0 0.3
1.0 0.3
_
_
+
+
2.0 0.3
H
T
4.4 0.5
_
_
+
+
5.0 0.3
0.6 0.3
_
+
2.5 0.3
Page 3/3
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
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