D39-06D [THINKISEMI]
20.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers;
| 型号： | D39-06D |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 20.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers |
| 文件： | 总2页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
D39-02D thru D39-12D
D39-02D thru D39-12D
Pb Free Plating Product
20.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers
TO-3P(TO-3PN/TO-3PB)
Unit:inch(mm)
Features
(
)
)
(
)
)
.604 15.35
.199 5.05
※ ThinkiSemi latest&matured process FRD/FRED
※ Low forward voltage drop
※ High current capability
(
.620 15.75
(
.175 4.45
)
)
.142 .60
(3
.125(3.20
※ Low reverse leakage current
※ High surge current capability
Application
(
.095 2.40
)
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
(
)
)
.126 3.20
(
.110 2.80
(
)
)
.050 1.25
(
.045 1.15
(
)
)
.030 0.75
Mechanical Data
(
.017 0.45
※ Case: Heatsink open metal TO-3P(TO-3PN/TO-3PB) package
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
(
)
)
(
)
)
.225 5.70
.225 5.70
(
.204 5.20
(
.204 5.20
Case
Case
Case
Case
※ Weight: 6.5 gram approximately
Doubler
Series
Negative
Positive
Tandem Polarity
Suffix "D"
Tandem Polarity
Suffix "S"
Common Cathode
Suffix "C"
Common Anode
Suffix "N"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
SYMBOL
D39-02D
D39-04D
D39-06D
D39-08D
D39-10D
D39-12D
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1200
840
V
V
V
Maximum DC Blocking Voltage
1000
1200
Maximum Average Forward Rectified
Current TC=125℃
20.0
200
IF(AV)
IFSM
A
A
V
(Total Device 2x10.0A=20.0A)
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)(Per Diode/Per Leg)
Maximum Instantaneous Forward Voltage
@10.0A(Per Diode/Per Leg)
VF
(Typical)
1.50-1.70
0.85-0.95
1.00-1.25
1.25-1.50
Maximum DC Reverse Current @TJ=25℃
At Rated DC Blocking Voltage @TJ=125℃
1.0
100
μA
μA
IR
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
25-50
50-75
Trr
CJ
nS
pF
100
0.75
RθJC
℃/W
Operating Junction and Storage
Temperature Range
-55 to +175
TJ,TSTG
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.11T
© 1995 Thinki Semiconductor Co., Ltd.
D39-02D thru D39-12D
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
20
200
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
16
12
8
160
120
80
4
40
0
60 Hz Resistive or
Inductive load
0
125
187.5
62.5
1
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE,
℃
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
100
D39-02D
TJ=125℃
100
D39-04D
10
D39-06D
10
℃
TJ=25
1
D39-08D/D39-10D/D39-12D
1
℃
TJ=25
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
℃
TJ = 25
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.11T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
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