DF10S [THINKISEMI]

1.0 Ampere Surface Mount Glass Passivated Bridge Rectifier; 1.0安培表面安装玻璃钝化整流桥
DF10S
型号: DF10S
厂家: Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述:

1.0 Ampere Surface Mount Glass Passivated Bridge Rectifier
1.0安培表面安装玻璃钝化整流桥

二极管 光电二极管
文件: 总2页 (文件大小:611K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DF005S thru DF10S  
®
1.0 Ampere Surface Mount Glass Passivated Bridge Rectifier  
DF005S thru DF10S  
Pb Free Plating Product  
DB-S/DF-S  
Unit : inch (mm)  
Features  
Glass passivated chip junction  
Low forward voltage drop  
High surge overload rating of 50 A peak  
Ideal for printed circuit board  
.009(0.25)  
.335(8.51)  
.316(8.05)  
Mechanical Data  
.045(1.14)  
.035(0.89)  
Case: Molded plastic, DB-S/DF-S  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Leads solderable per MIL-STD-202,  
method 208 guaranteed  
.205(5.2)  
.195(5.0)  
Mounting position: Any  
Absolute Maximum Ratings and Characteristics  
O
Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or  
inductive load. For capacitive load, derate current by 20%.  
DB101S DB102S DB103S DB104S DB105S DB106S DB107S  
Unit  
Parameter  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Symbols  
VRRM  
VRMS  
VDC  
DF005S DF01S DF02S DF04S DF06S DF08S DF10S  
50  
35  
50  
100 200 400 600 800 1000  
70 140 280 420 560 700  
V
V
V
A
Maximum DC Blocking Voltage  
100 200 400 600 800 1000  
1
O
Maximum Average Forward Rectified Current at TA = 40 C  
I(AV)  
Peak Forward Surge Current 8.3 ms Single Half-sine-wave  
Superimposed on Rated Load (JEDEC Method)  
IFSM  
VF  
IR  
50  
A
V
Maximum Forward Voltage at 1 A  
1.1  
O
Maximum Reverse Current at Rated at TA = 25 C  
DC Blocking Voltage  
Typical Junction Capacitance 1)  
5
500  
µA  
O
at TA = 125 C  
CJ  
25  
40  
pF  
OC/W  
OC/W  
OC  
Typical Thermal Resistance 2)  
Typical Thermal Resistance 2)  
RθJA  
RθJL  
15  
Operating and Storage Temperature Range  
TJ ,TS  
-55 to +150  
1) Measured at 1 MHz and applied reverse voltage of 4 V  
2) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B with 0.5 X 0.5" (13X 13  
mm) copper pads.  
Page 1/2  
http://www.thinkisemi.com/  
© 2006 Thinki Semiconductor Co.,Ltd.  
DF005S thru DF10S  
®
Page 2/2  
http://www.thinkisemi.com/  
© 2006 Thinki Semiconductor Co.,Ltd.  

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