DSEA16-06BC [THINKISEMI]
16.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers;
| 型号： | DSEA16-06BC |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 16.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers 软恢复二极管 局域网 |
| 文件： | 总2页 (文件大小：270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEA16-02BC thru DSEA16-12BC
DSEA16-02BC thru DSEA16-12BC
Pb Free Plating Product
16.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers
ITO-220AB/TO-220F-3L
Unit:inch(mm)
Features
※ ThinkiSemi latest&matured process FRD/FRED
※ Low forward voltage drop
※ High current capability
.189(4.8)
.165(4.2)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.130(3.3)
.114(2.9)
※ Low reverse leakage current
※ High surge current capability
Application
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
(2.55)
.1
※Case:Isolated fully plastic ITO-220AB/TO-220F-3L package
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
(2.55)
※ Weight: 2.0 gram approximately
Doubler
Series
Negative
Positive
Tandem Polarity
Prefix "DSED"
Tandem Polarity
Prefix "DSEE"
Common Cathode
Prefix "DSEC"
Common Anode
Prefix "DSEA"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
SYMBOL
DSEA16-02BC
DSEA16-04BC DSEA16-06BC DSEA16-08BC
DSEA16-10BC DSEA16-12BC
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1200
840
V
V
V
Maximum DC Blocking Voltage
1000
1200
Maximum Average Forward Rectified
Current TC=125℃
16.0
160
IF(AV)
IFSM
A
A
V
(Total Device 2x8.0A=16.0A)
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)(Per Diode/Per Leg)
Maximum Instantaneous Forward Voltage
@8.0A(Per Diode/Per Leg)
VF
(Typical)
1.50-1.70
0.85-0.95
1.00-1.25
1.25-1.50
Maximum DC Reverse Current @TJ=25℃
At Rated DC Blocking Voltage @TJ=125℃
1.0
100
μA
μA
IR
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
25-50
50-75
Trr
CJ
nS
pF
80
3.0
RθJC
℃/W
Operating Junction and Storage
Temperature Range
-55 to +175
TJ,TSTG
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Page 1/2
Rev.11T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
DSEA16-02BC thru DSEA16-12BC
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
16
160
128
96
64
32
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
12.8
9.6
6.4
3.2
60 Hz Resistive or
Inductive load
0
125
187.5
62.5
1
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE,
℃
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
80
DSEA16-02BC
TJ=125℃
100
DSEA16-04BC
DSEA16-06BC
8
10
℃
TJ=25
1
DSEA16-08BC/DSEA16-10BC/DSEA16-12BC
1
℃
TJ=25
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
℃
TJ = 25
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.11T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
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