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DSEE30-24A [THINKISEMI]

30.0 Ampere Heatsink Dual Tandem Structure In Series Ultra Fast Recovery Rectifiers;
DSEE30-24A
型号： DSEE30-24A
厂家： Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述：

30.0 Ampere Heatsink Dual Tandem Structure In Series Ultra Fast Recovery Rectifiers
文件： 总2页 (文件大小：283K)
中文：  中文翻译
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DSEE30-04A thru DSEE30-24A  
DSEE30-04A thru DSEE30-24A  
Pb Free Plating Product  
30.0 Ampere Heatsink Dual Tandem Structure In Series Ultra Fast Recovery Rectifiers  
TO-3PN/TO-3PB  
Unit:inch(mm)  
Features  
(
)
)
(
)
)
.604 15.35  
.199 5.05  
※ ThinkiSemi latest&matured process FRD/FRED  
※ Low forward voltage drop  
※ High current capability  
(
.620 15.75  
(
.175 4.45  
)
)
.142 .60  
(3  
.125(3.20  
※ Low reverse leakage current  
※ High surge current capability  
Application  
(
.095 2.40  
)
※ Automotive Inverters and Solar Inverters  
※ Car Audio Amplifiers and Sound Device Systems  
※ Plating Power Supply,Motor Control,UPS and SMPS etc.  
(
)
)
.126 3.20  
(
.110 2.80  
(
)
)
.050 1.25  
(
.045 1.15  
(
)
)
.030 0.75  
Mechanical Data  
(
.017 0.45  
※Case:Heat Sink TO-3PN/TO-3PB Outline  
※ Epoxy: UL 94V-0 rate flame retardant  
※ Terminals: Solderable per MIL-STD-202 method 208  
※ Polarity: As marked on diode body  
※ Mounting position: Any  
(
)
)
(
)
)
.225 5.70  
.225 5.70  
(
.204 5.20  
(
.204 5.20  
Case  
Case  
Case  
Case  
※ Weight: 6.5 gram approximately  
Doubler  
Series  
Negative  
Positive  
Tandem Polarity  
Prefix "DSED"  
Tandem Polarity  
Prefix "DSEE"  
Common Cathode  
Prefix "DSEC"  
Common Anode  
Prefix "DSEA"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25℃ ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
PARAMETER  
SYMBOL  
DSEE30-04A  
DSEE30-08A  
DSEE30-12A  
DSEE30-16A  
DSEE30-20A  
DSEE30-24A  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200x2  
140x2  
200x2  
400x2  
280x2  
400x2  
600x2  
420x2  
600x2  
800x2  
560x2  
800x2  
1000x2  
700x2  
1200x2  
840x2  
V
V
V
Maximum DC Blocking Voltage  
1000x2  
1200x2  
Maximum Average Forward Rectified  
Current TC=125℃  
30.0  
IF(AV)  
IFSM  
A
A
V
(Total Device 2x30.0A=60.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)(Per Diode/Per Leg)  
300  
Maximum Instantaneous Forward Voltage  
@30.0A(Per Diode/Per Leg)  
VF  
(Typical)  
1.50-1.70  
0.85-0.95  
1.00-1.25  
1.25-1.50  
Maximum DC Reverse Current @TJ=25℃  
At Rated DC Blocking Voltage @TJ=125℃  
1.0  
100  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
25-50  
50-75  
Trr  
CJ  
nS  
pF  
150  
0.75  
RθJC  
℃/W  
Operating Junction and Storage  
Temperature Range  
-55 to +175  
TJ,TSTG  
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
Rev.11T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  
DSEE30-04A thru DSEE30-24A  
FIG.2 - MAXIMUM NON-REPETITIVE  
PEAK FORWARD SURGE CURRENT  
FIG.1 - FORWARD CURRENT DERATING CURVE  
30  
300  
Pulse Width 8.3ms  
Single Half-Sire-Wave  
(JEDEC Method)  
24  
18  
12  
8
240  
180  
120  
60  
0
60 Hz Resistive or  
Inductive load  
0
125  
187.5  
62.5  
1
10  
100  
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE,  
℃
FIG.3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
1000  
150  
DSEE30-04A  
TJ=125℃  
100  
DSEE30-08A  
DSEE30-12A  
15  
10  
℃
TJ=25  
1
DSEE30-16A/DSEE30-20A/DSEE30-24A  
1
℃
TJ=25  
PULSE WIDTH=300uS  
1% DUTY CYCLE  
0.1  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.5 - TYPICAL JUNCTION CAPACITANCE  
2250  
℃
TJ = 25  
f = 1.0 MHZ  
Vsig = 50mVp-p  
150  
10  
0.1  
1.0  
4.0 10  
100  
REVERSE VOLTAGE, VOLTS  
Page 2/2  
Rev.11T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  

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