EZ8590B [THINKISEMI]
85V,92A N-Channel Trench Process Power MOSFETs;
| 型号： | EZ8590B |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 85V,92A N-Channel Trench Process Power MOSFETs |
| 文件： | 总5页 (文件大小：1095K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EZ8590
EZ8590
Pb Free Plating Product
85V,92A N-Channel Trench Process Power MOSFETs
General Description
EZ8590
(TO-220 HeatSink)
TSP8592 series is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged
EAS capability and ultra low RDS(ON) is suitable for PWM,
load switching especially for E-Bike controller applications.
S
D
G
Features
● VDS=85V; ID=92A@ VGS=10V;
RDS(ON)<7.45mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application
EZ8590F
(TO-220F FullPak)
Schematic Diagram
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
S
D
Application
G
VDS = 85 V
ID = 92A
●
●
●
●
64V E-Bike Controller Applications
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Inverter Application
EZ8590B
(TO-263/D2PAK)
D
●
Amplifier Application
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RDS(ON) = 6.2 mΩ
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Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
Value
85
Unit
V
VDS
Drain-Source Voltage (VGS=0V)
±25
92
V
VGS
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
A
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
64.4
368
30
A
(Note 1)
A
Drain Current-Continuous@ Current-Pulsed
Peak Diode Recovery Voltage
Maximum Power Dissipation(Tc=25℃)
Derating Factor
V/ns
W
139
0.93
625
W/℃
Single Pulse Avalanche Energy (Note 2)
EAS
mJ
Operating Junction and Storage Temperature Range
-55 To 175
℃
TJ,TSTG
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:T =25℃,VDD=40V,VG=10V,RG=25Ω
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Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/5
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EZ8590
Table 2. Thermal Characteristic
Symbol
Parameter
Value
Unit
RJC
Thermal Resistance,Junction-to-Case
1.08
℃/W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ Max Unit
On/Off States
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS=0V ID=250μA
VDS=82V,VGS=0V
VDS=82V,VGS=0V
75
85
V
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
1
μA
μA
IDSS
10
IGSS
Gate-Body Leakage Current
Gate Threshold Voltage
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=40A
±100
4
nA
V
VGS(th)
RDS(ON)
2
Drain-Source On-State Resistance
6.2
7.45
mΩ
Dynamic Characteristics
gFS
Ciss
Coss
Forward Transconductance
VDS=10V,ID=15A
20
S
Input Capacitance
Output Capacitance
5053
442
PF
PF
VDS=25V,VGS=0V,
f=1.0MHz
Crss
Qg
Reverse Transfer Capacitance
Total Gate Charge
145
106
19
PF
nC
nC
VDS=50V,ID=40A,
VGS=10V
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
47.9
nC
Switching Times
td(on) Turn-on Delay Time
tr
td(off)
tf
15
18
31
38
nS
nS
nS
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=30V,ID=40A,RL=15Ω
VGS=10V,RG=2.5Ω
Source-Drain Diode Characteristics
ISD
ISDM
VSD
trr
Source-drain Current(Body Diode)
92
368
0.78
56
A
A
Pulsed Source-Drain Current(Body Diode)
(Note 1)
TJ=25℃,ISD=40A,VGS=0V
0.95
V
Forward On Voltage
(Note 1)
nS
Reverse Recovery Time
TJ=25℃,IF=75A
(Note 1)
di/dt=100A/μs
Qrr
ton
113
nC
Reverse Recovery Charge
Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting T =25℃
J
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
Page 2/5
http://www.thinkisemi.com.tw/
EZ8590
Test Circuit
1) EAS Test Circuits
2) Gate Charge Test Circuit:
3) Switch Time Test Circuit：
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
Page 3/5
http://www.thinkisemi.com.tw/
EZ8590
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Figure1. Output Characteristics
Figure2. Transfer Characteristics
VDS Drain-Source Voltage (V)
VGS Gate-Source Voltage (V)
Figure3. Rdson Vs Drain Current
Figure4. Rdson Vs Junction Temperature
3.0
ID- Drain Current (A)
TJ-Junction Temperature(℃)
Figure5. Gate Charge
Figure6. Source- Drain Diode Forward
Qg Gate Charge (nC)
VSD Source-Drain Voltage (V)
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
Page 4/5
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EZ8590
Figure7. Capacitance vs Vds
Figure8. Safe Operation Area
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Figure9. BVDSS vs Junction Temperature
Figure10. VGS(th) vs Junction Temperature
TJ-Junction
Temperature(℃)
TJ-Junction Temperature(℃)
Figure11. Normalized Maximum Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
Page 5/5
http://www.thinkisemi.com.tw/
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