FEP16FTA [THINKISEMI]
16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers; 16.0安培快速高效的塑料半桥式整流器
| 型号： | FEP16FTA |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers |
| 文件： | 总2页 (文件大小：344K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FEP16A thru FEP16J
FEP16A thru FEP16J
Pb Free Plating Product
16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers
Unit : inch (mm)
TO-220AB
Features
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
ꢀ Glass passivated chip junction
.139(3.55)
MIN
Fast switching for high efficiency
ꢀ
.054(1.39)
.045(1.15)
and High current capability
Low forward voltage drop
ꢀ
ꢀ Low reverse leakage current
High surge current capability
ꢀ
Application
Automotive Environment|DC Motor Control
ꢀ
ꢀ
ꢀ
Plating Power Supply|UPS|Inverter
Car Amplifier and Sound Device System etc..
.038(0.96)
.025(0.65)MAX
.019(0.50)
Mechanical Data
ꢀ
ꢀ
ꢀ
Case: Molded plastic TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
.1(2.54)
.1(2.54)
Case
Case
Case
ꢀ
ꢀ
ꢀ
Polarity:As marked on body
Mounting position: Any
Weight: 2.03 grams
Doubler
Series Connection
Suffix "TD"
Negative CT
Common Anode
Suffix "TA"
Positive CT
Common Cathode
Suffix "T"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FEP16AT FEP16BT FEP16DT FEP16FT FEP16GT FEP16JT
FEP16ATA FEP16BTA FEP16DTA FEP16FTA FEP16GTA FEP16JTA
FEP16ATD FEP16BTD FEP16DTD FEP16FTD FEP16GTD FEP16JTD
Common Cathode Suffix "T"
UNIT
SYMBOL
Common Anode Suffix "TA"
Anode and Cathode Coexistence Suffix "TD"
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
50
35
50
100
70
200
140
200
300
210
300
400
280
400
600
420
600
V
Maximum DC Blocking Voltage
V
DC
100
Maximum Average Forward Rectified
16.0
A
A
V
IF(AV)
Current T
C
=100oC
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
I
FSM
175
150
Maximum Instantaneous Forward Voltage
@ 8.0 A
V
F
0.98
1.3
1.7
Maximum DC Reverse Current @T
At Rated DC Blocking Voltage @T
J
=25oC
uA
uA
nS
10.0
250
I
R
J
=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
35
90
pF
oCW
C
J
R
JC
2.2
Operating Junction and Storage
Temperature Range
oC
-55 to + 150
T , TSTG
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
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© 2006 Thinki Semiconductor Co.,Ltd.
FEP16A thru FEP16J
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
16
13
10
8
200
175
150
125
100
75
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
6
50
4
25
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, oC
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
1.0
1000
FEP16A-FEP16D
TJ=125oC
FEP16F-FEP16G
100
10
FEP16J
TJ=25oC
0.1
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
http://www.thinkisemi.com/
© 2006 Thinki Semiconductor Co.,Ltd.
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