FES16IT [THINKISEMI]
16.0 Ampere Heatsink Package Positive Ultra Fast Recovery Rectifier Diode;
| 型号： | FES16IT |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 16.0 Ampere Heatsink Package Positive Ultra Fast Recovery Rectifier Diode |
| 文件： | 总2页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FES16AT thru FES16NT
Pb Free Plating Product
FES16AT thru FES16NT
16.0 Ampere Heatsink Package Positive Ultra Fast Recovery Rectifier Diode
TO-220AC(TO-220-2L)
Unit:inch(mm)
Features
※ ThinkiSemi latest&matured process FRD/FRED
※ Low forward voltage drop
※ High current capability
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
.139(3.55)
MIN
.054(1.39)
.045(1.15)
※
Low reverse leakage current
※ High surge current capability
Application
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
.038(0.96)
.019(0.50)
.025(0.65)MAX
Mechanical Data
※
※
Case: TO-220AC(TO-220-2L) with heat sink package
Epoxy: UL 94V-0 rate flame retardant
Internal Configuration
Base Backside
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
.1(2.54)
.1(2.54)
Base Backside
※ Weight: 2.0 gram approximately
Negative
Positive
Suffix "T"
Suffix "TR"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
FES16AT
FES16BT
FES16CT
FES16DT
FES16ET
FES16FT
FES16GT
FES16HT
FES16IT
FES16JT
FES16KT
FES16LT
PARAMETER
SYMBOL
FES16MT
FES16NT
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1200
840
V
V
V
Maximum DC Blocking Voltage
1000
1200
Maximum Average Forward Rectified
Current TC=125℃
16.0
300
IF(AV)
IFSM
A
A
V
(Total Device 16.0A)
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)(Per Diode/Per Leg)
Maximum Instantaneous Forward Voltage
@16.0A(Per Diode/Per Leg)
VF
(Typical)
1.50-1.70
0.85-0.95
1.00-1.25
1.25-1.50
Maximum DC Reverse Current @TJ=25℃
At Rated DC Blocking Voltage @TJ=125℃
1.0
100
μA
μA
IR
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
25-50
50-75
Trr
CJ
nS
pF
160
1.50
RθJC
℃/W
Operating Junction and Storage
Temperature Range
-55 to +175
TJ,TSTG
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Page 1/2
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
FES16AT thru FES16NT
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
16
300
240
180
120
60
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
12.8
9.6
6.4
3.2
60 Hz Resistive or
Inductive load
0
0
125
187.5
62.5
1
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE,
℃
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
80
FES16AT/FES16BT/FES16CT/FES16DT
TJ=125℃
100
FES16ET/FES16FT/FES16GT
FES16HT/FES16IT/FES16JT
8
10
℃
TJ=25
1
FES16KT/FES16LT/FES16MT/FES16NT
1
℃
TJ=25
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
℃
TJ = 25
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
相关型号：
FES16JT-45
Rectifier Diode, 1 Phase, 1 Element, 16A, 600V V(RRM), Silicon, TO-220AC, PLASTIC PACKAGE-2
VISHAY
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