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Description:
FMU31S 20.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers
Prototype PCB
Part No.:   FMU31S
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Description:   20.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers
File Size :   931 K    
Page : 3 Pages
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Maker   THINKISEMI [ Thinki Semiconductor Co., Ltd. ]http://www.thinkisemi.com
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  FMU31S Datasheet PDF page 2 FMU31S Datasheet PDF page 3  
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FMU31S thru FMU36S
FMU31S/FMU32S/FMU33S/FMU34S/FMU35S/FMU36S
Pb
Pb Free Plating Product
20.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
TO-3PN
Bottom Side Metal Heat Sink
Automotive Inverters and Solar Inverters
Plating Power Supply,Motor Control,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Heatsink TO-3PN open metal package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 0.61 gram approximately
Case
Case
Case
Case
Series
Doubler
Negative
Positive
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "UR"
Suffix "R"
Suffix "U"
Suffix "S"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=125
(Total Device 2x10A=20A)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 10.0 A
(Per Diode/Per Leg)
Maximum DC Reverse Current @T
J
=25
At Rated DC Blocking Voltage @T
J
=125
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
V
F
0.98
1.3
5.0
100
35
120
0.85
-55 to + 150
70
1.7
V
I
FSM
200
FMU31S
FMU32S
200
140
200
FMU33S
FMU34S
400
280
400
20.0
FMU35S
FMU36S
600
420
600
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
A
I
R
Trr
C
J
R
JC
T
J
, T
STG
μA
μA
nS
pF
/W
NOTES : (1) Reverse recovery test conditions IF = 0.5A, I = 1.0A, Irr = 0.25A.
R
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/3
http://www.thinkisemi.com.tw/
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