HER1003N [THINKISEMI]
10Ampere Heat Sink Dual Common Anode High Efficiency Rectifiers;
| 型号： | HER1003N |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 10Ampere Heat Sink Dual Common Anode High Efficiency Rectifiers |
| 文件： | 总2页 (文件大小：1658K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF2001G thru SFF2008G
SFF2001G thru SFF2008G
Pb Free Plating Product
20.0 Amperes Insulated Dual Common Cathode Super Fast Recovery Rectifiers
Unit : inch (mm)
ITO-220AB/TO-220F-3L
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Super fast switching for high efficiency
.189(4.8)
.165(4.2)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.130(3.3)
.114(2.9)
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
Car Audio Amplifiers and Sound Device Systems
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
(2.55)
.1
ꢀ
ꢀ
ꢀ
Case: ITO-220AB full plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
(2.55)
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body
Mounting position: Any
Weight: 1.90 gram approximately
Doubler
Tandem Polarity Tandem Polarity
Suffix "GD" Suffix "GS"
Series
Negative
Common Cathode Common Anode
Suffix "G" Suffix "GA"
Positive
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SFF SFF SFF SFF SFF SFF
SYMBOL 2001 2002 2003 2004 2005 2006 2007 2008 UNIT
SFF
SFF
PARAMETER
G
G
G
G
G
G
G
G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
150
105
150
200
140
200
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
A
70
Maximum DC blocking voltage
100
Maximum average forward rectified current
IF(AV)
20
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
V
Maximum instantaneous forward voltage (Note 1)
@ 10 A
VF
0.975
1.3
1.7
TJ=25°C
Maximum reverse current @ rated VR
TJ=125°C
10
IR
μA
400
35
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
trr
CJ
ns
pF
90
RθJC
TJ
2.5
°C/W
°C
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
SFF2001G thru SFF2008G
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
25
100
10
1
20
15
10
TJ=100°C
TJ=75°C
5
0
Resistive or
inductive load
with heat sink
TJ=25°C
0.1
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
CASE TEMPERATURE (°C)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
150
SFF2001G/SFF2002G/SFF2003G/SFF2004G
8.3ms single half sine wave
120
90
60
30
0
10
SFF2005G/SFF2006G
1
SFF2007G/SFF2008G
Pulse width=300μs
1% duty cycle
0.1
1
10
100
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
NUMBER OF CYCLES AT 60 Hz
FORWARD VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
90
80
70
60
50
40
f=1.0MHz
Vsig=50mVp-p
1
10
100
REVERSE VOLTAGE (V)
Page 2/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
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