HER1007A [THINKISEMI]
10Ampere Heat Sink Dual Common Anode High Efficiency Rectifiers;
| 型号： | HER1007A |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 10Ampere Heat Sink Dual Common Anode High Efficiency Rectifiers |
| 文件： | 总2页 (文件大小：5208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMXS-2206S
FMXS-2206S
Pb Free Plating Product
20Amperes,600Volts Insulated Common Cathode Ultra Fast Recovery Rectifiers
Unit : inch (mm)
ITO-220AB/TO-220F-3L
APPLICATION
.189(4.8)
.406(10.3)
.165(4.2)
.381(9.7)
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
.134(3.4)
.130(3.3)
.114(2.9)
.118(3.0)
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
PRODUCT FEATURE
· Ultrafast Recovery Time
.1
(2.55)
.1
(2.55)
· Soft Recovery Characteristics
· Low Recovery Loss
Case
Case
Case
Case
· Low Forward Voltage
Doubler
Tandem Polarity Tandem Polarity
Suffix "U" Suffix "UR"
Series
Negative
Common Cathode Common Anode
Suffix "S" Suffix "R"
Positive
· High Surge Current Capability
· Low Leakage Current
GENERAL DESCRIPTION
FMXS-2206S using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
Absolute Maximum Ratings
Parameter
Symbol
Test Conditions
Values
Units
Repetitive peak reverse voltage
VRRM
600
V
(total device)
Continuous forward current
IF(AV)
20
Tc =110°C
A
(total device)
Single pulse forward current
IFSM
IFRM
Tj
160
60
Tc =25°C
Maximum repetitive forward current
Operating junction
Square wave, 20kHZ
175
°C
°C
Storage temperatures
Tstg
-55 to +175
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/
FMXS-2206S
Electrical characteristics (Ta=25°C unless otherwise specified)
Parameter
Symbol
VBR,
Test Conditions
Min
Typ.
Max.
Units
Breakdown voltage
Blocking voltage
IR=100µA
600
VR
IF=10A
1.35
1.10
1.60
1.40
20
V
Forward voltage
(Per Diode)
VF
IF=10A, Tj =125°C
VR= VRRM
Reverse leakage
IR
µA
current(Per Diode)
200
Tj=150°C, VR=600V
IF=0.5A, IR=1A, IRR=0.25A
35
27
45
35
Reverse recovery
time(Per Diode)
trr
ns
IF=1A,VR=30V, di/dt =200A/us
Thermal characteristics
Paramter
Symbol
Typ
3.0
Units
/
℃ W
Junction-to-Case
RθJC
Electrical performance (typical)
Forward Characteristic(typ.)
100.0
Reverse Characteristic(typ.)
Ta=25
℃
10.0
1.0
0.1
0.0
0.0
Ta=25
℃
Ta=125
℃
Ta=125
℃
10.0
1.0
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
100
Forward Voltage VF(V)
Reverse Voltage VR(V)
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com.tw/
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