HER1612CT [THINKISEMI]
16.0 Ampere Heatsink Dual Common Cathode High Efficiency Rectifiers;
| 型号： | HER1612CT |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 16.0 Ampere Heatsink Dual Common Cathode High Efficiency Rectifiers |
| 文件： | 总2页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HER1602CT thru HER1612CT
HER1602CT thru HER1612CT
Pb Free Plating Product
16.0 Ampere Heatsink Dual Common Cathode High Efficiency Rectifiers
TO-220AB/TO-220-3L
Unit:inch(mm)
Features
※ ThinkiSemi latest&matured process FRD/FRED
※ Low forward voltage drop
※ High current capability
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
.139(3.55)
MIN
.054(1.39)
.045(1.15)
※ Low reverse leakage current
※ High surge current capability
Application
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
.038(0.96)
.019(0.50)
.025(0.65)MAX
Mechanical Data
※ Case: Heatsink open metal TO-220AB/TO-220-3L package
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
.1(2.54)
.1(2.54)
Case
Case
Case
Case
※ Weight: 2.0 gram approximately
Doubler
Series
Negative
Positive
Tandem Polarity
Suffix "CR"
Tandem Polarity
Suffix "CL"
Common Cathode
Suffix "CT"
Common Anode
Suffix "CA"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
HER1603CT
HER1604CT
PARAMETER
HER1610CT
HER1612CT
SYMBOL
HER1606CT
HER1608CT
UNIT
HER1602CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1200
840
V
V
V
Maximum DC Blocking Voltage
1000
1200
Maximum Average Forward Rectified
Current TC=125℃
16.0
160
IF(AV)
IFSM
A
A
V
(Total Device 2x8.0A=16.0A)
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)(Per Diode/Per Leg)
Maximum Instantaneous Forward Voltage
@8.0A(Per Diode/Per Leg)
VF
(Typical)
1.30-1.70
0.85-1.00
1.00-1.30
1.30-1.70
Maximum DC Reverse Current @TJ=25℃
At Rated DC Blocking Voltage @TJ=125℃
1.0
100
μA
μA
IR
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
35-50
50-75
Trr
CJ
nS
pF
80
1.5
RθJC
℃/W
Operating Junction and Storage
Temperature Range
-55 to +175
TJ,TSTG
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Page 1/2
Rev.11T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
HER1602CT thru HER1612CT
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
16
160
128
96
64
32
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
12.8
9.6
6.4
3.2
60 Hz Resistive or
Inductive load
0
125
187.5
62.5
1
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE,
℃
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
80
HER1602CT
TJ=125℃
100
HER1603CT/HER1604CT
HER1606CT
8
10
℃
TJ=25
1
HER1608CT/HER1610CT/HER1612CT
1
℃
TJ=25
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
℃
TJ = 25
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.11T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
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