HER2002S [THINKISEMI]
20.0 Ampere Heatsink Dual Series Connection High Efficiency Rectifiers;
| 型号： | HER2002S |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 20.0 Ampere Heatsink Dual Series Connection High Efficiency Rectifiers |
| 文件： | 总2页 (文件大小：622K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HER2001S thru HER2008S
HER2001S thru HER2008S
Pb Free Plating Product
20.0 Ampere Heatsink Dual Series Connection High Efficiency Rectifiers
TO-220AB/TO-220-3L
Unit : inch (mm)
Features
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency
Low forward voltage drop
High current capability
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.038(0.96)
.019(0.50)
.025(0.65)MAX
Mechanical Data
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-220AB open metal package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
.1(2.54)
.1(2.54)
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Negative
Common Cathode Common Anode
Suffix "C" Suffix "A"
Positive
Doubler
Series
Tandem Polarity
Tandem Polarity
Weight: 2.2 gram approximately
Suffix "D"
Suffix "S"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
HER
2001S
50
HER
2002S
100
70
HER
2003S
200
HER
2004S
300
HER
2005S
400
HER
HER
2007S
800
HER
PARAMETER
SYMBOL
UNIT
2006S
600
2008S
1000
700
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
V
V
V
A
35
140
210
280
420
560
Maximum DC blocking voltage
50
100
200
300
400
600
800
1000
Maximum average forward rectified current(total device)
IF(AV)
20
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
200
A
V
Maximum instantaneous forward voltage (Note 1)
@ 10 A(per leg)
VF
1.0
1.3
1.7
TJ=25°C
Maximum reverse current @ rated VR
TJ=125°C
5.0
IR
μA
100
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
trr
CJ
50
80
80
50
ns
pF
RθJC
TJ
1.5
°C/W
°C
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
HER2001S thru HER2008S
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
1000
100
10
20
16
12
8
TJ=125°C
1
TJ=25°C
4
0
Resistive of
inductive load
with heatsink
0.1
0
20
40
60
80
100
120
140
0
50
100
150
CASE TEMPERATURE (°C)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
250
200
150
100
50
HER2001S/HER2002S/HER2003S/HER2004S
HER2005S
10
8.3ms single half sine wave
1
HER2006S/HER2007S/HER2008S
Pulse width-300μs
1% duty cycle
0
0.1
1
10
100
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
NUMBER OF CYCLES AT 60 Hz
FORWARD VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
240
200
160
120
80
f=1.0MHz
Vsig=50mVp-p
HER2001S/HER2002S/HER2003S/HER2004S/HER2005S
HER2006S/HER2007S/HER2008S
40
0
1
10
100
1000
REVERSE VOLTAGE (V)
Page 2/2
http://www.thinkisemi.com.tw/
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
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