HER2008PR [THINKISEMI]
20.0 Ampere Heatsink Dual Doubler Polarity High Efficiency Rectifiers;
| 型号： | HER2008PR |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 20.0 Ampere Heatsink Dual Doubler Polarity High Efficiency Rectifiers |
| 文件： | 总2页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HER2002PR thru HER2012PR
HER2002PR thru HER2012PR
Pb Free Plating Product
20.0 Ampere Heatsink Dual Doubler Polarity High Efficiency Rectifiers
TO-247AD/TO-3P
Unit:inch(mm)
Features
※ ThinkiSemi latest&matured process FRD/FRED
※ Low forward voltage drop
※ High current capability
.640(16.25)
.620(15.75)
.199(5.05)
.175(4.45)
.142(3.6)
.125(3.2)
※ Low reverse leakage current
※ High surge current capability
Application
.095(2.4)
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.030(0.75)
.017(0.45)
Mechanical Data
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
※ Case: Heatsink TO-247AD/TO-3P Package Outline
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
Case
Case
Case
Case
※ Weight: 6.0 gram approximately
Doubler
Series
Negative
Positive
Tandem Polarity
Suffix "PR"
Tandem Polarity
Suffix "PL"
Common Cathode
Suffix "PT"
Common Anode
Suffix "PA"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
HER2003PR
HER2004PR
PARAMETER
HER2010PR
HER2012PR
SYMBOL
HER2006PR
HER2008PR
UNIT
HER2002PR
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1200
840
V
V
V
Maximum DC Blocking Voltage
1000
1200
Maximum Average Forward Rectified
Current TC=125℃
20.0
200
IF(AV)
IFSM
A
A
V
(Total Device 2x10.0A=20.0A)
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)(Per Diode/Per Leg)
Maximum Instantaneous Forward Voltage
@10.0A(Per Diode/Per Leg)
VF
(Typical)
1.30-1.70
0.85-1.00
1.00-1.30
1.30-1.70
Maximum DC Reverse Current @TJ=25℃
At Rated DC Blocking Voltage @TJ=125℃
1.0
100
μA
μA
IR
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
35-50
50-75
Trr
CJ
nS
pF
100
0.75
RθJC
℃/W
Operating Junction and Storage
Temperature Range
-55 to +175
TJ,TSTG
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Page 1/2
Rev.11T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
HER2002PR thru HER2012PR
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
20
200
160
120
80
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
16
12
8
40
4
60 Hz Resistive or
Inductive load
0
0
125
187.5
62.5
1
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE,
℃
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
100
HER2002PR
TJ=125℃
100
HER2003PR/HER2004PR
HER2006PR
10
10
℃
TJ=25
1
HER2008PR/HER2010PR/HER2012PR
1
℃
TJ=25
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
℃
TJ = 25
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.11T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
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