HER3003PR [THINKISEMI]
30.0 Ampere Heatsink Dual Doubler Polarity High Efficiency Rectifiers;
| 型号： | HER3003PR |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 30.0 Ampere Heatsink Dual Doubler Polarity High Efficiency Rectifiers |
| 文件： | 总2页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HER3002PR thru HER3012PR
HER3002PR thru HER3012PR
Pb Free Plating Product
30.0 Ampere Heatsink Dual Doubler Polarity High Efficiency Rectifiers
TO-247AD/TO-3P
Unit:inch(mm)
Features
※ ThinkiSemi latest&matured process FRD/FRED
※ Low forward voltage drop
※ High current capability
.640(16.25)
.620(15.75)
.199(5.05)
.175(4.45)
.142(3.6)
.125(3.2)
※ Low reverse leakage current
※ High surge current capability
Application
.095(2.4)
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.030(0.75)
.017(0.45)
Mechanical Data
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
※ Case: Heatsink TO-247AD/TO-3P Package Outline
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
Case
Case
Case
Case
※ Weight: 6.0 gram approximately
Doubler
Series
Negative
Positive
Tandem Polarity
Suffix "PR"
Tandem Polarity
Suffix "PL"
Common Cathode
Suffix "PT"
Common Anode
Suffix "PA"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
HER3003PR
HER3004PR
PARAMETER
HER3010PR
HER3012PR
SYMBOL
HER3006PR
HER3008PR
UNIT
HER3002PR
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1200
840
V
V
V
Maximum DC Blocking Voltage
1000
1200
Maximum Average Forward Rectified
Current TC=125℃
30.0
300
IF(AV)
IFSM
A
A
V
(Total Device 2x15.0A=30.0A)
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)(Per Diode/Per Leg)
Maximum Instantaneous Forward Voltage
@15.0A(Per Diode/Per Leg)
VF
(Typical)
1.30-1.70
0.85-1.00
1.00-1.30
1.30-1.70
Maximum DC Reverse Current @TJ=25℃
At Rated DC Blocking Voltage @TJ=125℃
1.0
100
μA
μA
IR
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
35-50
50-75
Trr
CJ
nS
pF
150
0.75
RθJC
℃/W
Operating Junction and Storage
Temperature Range
-55 to +175
TJ,TSTG
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Page 1/2
Rev.11T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
HER3002PR thru HER3012PR
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
30
300
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
24
18
12
6
240
180
120
60
0
60 Hz Resistive or
Inductive load
0
125
187.5
62.5
1
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE,
℃
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
150
HER3002PR
TJ=125℃
100
HER3003PR/HER3004PR
HER3006PR
15
10
℃
TJ=25
1
HER3008PR/HER3010PR/HER3012PR
1
℃
TJ=25
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
2250
℃
TJ = 25
f = 1.0 MHZ
Vsig = 50mVp-p
150
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.11T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
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