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IDP30E60 30Amperes,600Volts SwitchMode Ultrafast Recovery Epitaxial Diode
Prototype PCB
Part No.:   IDP30E60
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Description:   30Amperes,600Volts SwitchMode Ultrafast Recovery Epitaxial Diode
File Size :   2334 K    
Page : 2 Pages
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Maker   THINKISEMI [ Thinki Semiconductor Co., Ltd. ]http://www.thinkisemi.com
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  IDP30E60 Datasheet PDF page 2  
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IDP30E60
IDP30E60
Pb Free Plating Product
30Amperes,600Volts SwitchMode Ultrafast Recovery Epitaxial Diode
TO-220AC/TO-220CB-2P
Cathode(Bottom Side Metal Heatsink)
Pb
APPLICATION
·
·
·
·
·
·
·
Freewheeling, Snubber, Clamp
Inversion Welder
PFC
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
UPS
PRODUCT FEATURE
·
Ultrafast Recovery Time
·
Soft Recovery Characteristics
·
Low Recovery Loss
·
Low Forward Voltage
·
High Surge Current Capability
·
Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
GENERAL DESCRIPTION
IDP30E60 using lastest matured FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics.
Absolute Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction
Storage temperatures
Symbol
V
RRM
I
F(AV)
I
FSM
I
FRM
Tj
Tstg
Test Conditions
Tc =110°C
Tc =25°C
Square wave, 20kHZ
Values
600
30
240
55
175
-55 to +175
°C
°C
A
Units
V
Electrical characteristics (Ta=25°Cunless otherwise specified)
Parameter
Breakdown voltage
Blocking voltage
Forward voltage
(Per Diode)
Reverse leakage
current(Per Diode)
Reverse recovery
time(Per Diode)
Symbol
V
BR
,
V
R
V
F
Test Conditions
I
R
=100µA
I
F
=30A
I
F
=30A, Tj =125°C
V
R
= V
RRM
I
R
Tj=150°C, V
R
=600V
I
F
=0.5A, I
R
=1A, I
RR
=0.25A
I
F
=1A,V
R
=30V, di/dt =-200A/us
35
28
Min
600
1.30
1.05
1.60
1.40
20
200
45
35
µA
V
Typ.
Max.
Units
t
rr
ns
Thermal characteristics
Paramter
Symbol
R
θJC
Typ
1.6
Units
℃/W
Junction-to-Case
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/
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