MBR3060PTR [THINKISEMI]
30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers;型号: | MBR3060PTR |
厂家: | Thinki Semiconductor Co., Ltd. |
描述: | 30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers |
文件: | 总2页 (文件大小:948K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR3035PTR thru MBR30200PTR
MBR3035PTR thru MBR30200PTR
Pb Free Plating Product
30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers
TO-3PN/TO-3PB
Features
ꢀ Standard MBR matured technology with high reliablity
ꢀ Low forward voltage drop
ꢀ High current capability
Bottom Side Metal Heat Sink
ꢀ Low reverse leakage current
ꢀ High surge current capability
Application
Automotive Inverters/Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
ꢀ Case: Heatsink TO-3PN/TO-3PB
ꢀ Epoxy: UL 94V-0 rate flame retardant
ꢀ
method 208
Terminals: Solderable per MIL-STD-202
ꢀ Polarity: As marked on diode body
ꢀ Mounting position: Any
ꢀ Weight: 6.5 gram approximately
Case
Case
Case
Case
Series
Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "PTS"
Negative
Positive
Suffix "PT"
Suffix "PTR"
Suffix "PTD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200 UNIT
PTR
35
PTR
45
PTR
50
PTR
60
PTR
90
PTR
100
70
PTR
150
105
150
PTR
200
140
200
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
V
V
V
A
24
31
35
42
63
Maximum DC blocking voltage
35
45
50
60
90
100
Maximum average forward rectified current
IF(AV)
30
30
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
IRRM
200
A
A
Peak repetitive reverse surge Current (Note 1)
2
-
1
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25℃
0.75
0.85
0.95
0.92
1.02
0.98
1.05
-
IF=15A, TJ=125℃
VF
0.60
0.82
0.73
0.65
0.75
V
IF=30A, TJ=25℃
-
-
-
-
1.10
-
IF=30A, TJ=125℃
1
0.5
0.1
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
IR
mA
20
15
10
Voltage rate of change,(Rated VR)
Typical thermal resistance
10,000
1.4
dV/dt
RθJC
TJ
V/μs
℃
/W
℃
℃
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
TSTG
Note 1: 2.0μs Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
MBR3035PTR thru MBR30200PTR
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 2 MAXIMUM FORWARD SURGE CURRENT
PER LEG
FIG.1 FORWARD CURRENT DERATING CURVE
35
30
25
20
15
225
200
175
150
125
100
75
8.3ms Single Half Sine Wave
JEDEC Method
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
10
5
50
0
25
0
25
50
75
100
125
150
0
1
10
100
CASE TEMPERATURE (℃)
NUMBER OF CYCLES AT 60 Hz
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
10
100
10
TJ=125℃
TJ=125℃
1
TJ=25℃
1
0.1
TJ=25℃
0.1
0.01
0.01
0.001
MBR3035PTR-MBR3045PTR
MBR3050PTR-MBR3060PTR
MBR3090PTR-MBR30200PTR
MBR3035PTR-MBR3045PTR
MBR3050PTR-MBR30200PTR
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2
0
20
40
60
80
100
120
140
FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
10000
1000
100
100
10
1
f=1.0MHz
Vsig=50mVp-p
MBR3035PTR-MBR3045PTR
MBR3050PTR-MBR3060PTR
MBR3090PTR-MBR30200PTR
0.1
0.01
0.1
1
10
100
0.1
1
10
100
T-PULSE DURATION(s)
REVERSE VOLTAGE (V)
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/
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