MBRB2060CTG [THINKISEMI]
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers;
| 型号： | MBRB2060CTG |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers 局域网 PC 二极管 |
| 文件： | 总2页 (文件大小：1052K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRB2045CTG thru MBRB20200CTG
MBRB2045CTG thru MBRB20200CTG
Pb Free Plating Product
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers
Unit : inch (mm)
D2PAK/TO-263AB
ThinkiSemi Planar Schottky Technology
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Good Soft Recovery Characteristics
Ideally Suited for Automatic Assembly
Low Forward Voltage
Features
High Surge Current Capability
Low Leakage Current
Freewheeling, Snubber, Clamp
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Inversion Welder
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PFC
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Applications
Plating Power Supply
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Ultrasonic Cleaner and Welder
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Case
Case
Case
Case
Converter & Chopper
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Doubler
Tandem Polarity Tandem Polarity
Suffix "CTD" Suffix "CTS"
Series
Negative
Common Cathode Common Anode
Suffix "CTG" Suffix "CTA"
Positive
UPS/LED SMPS/HID
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
MBRB
2045
CTG
MBRB
2060
CTG
MBRB
20100
CTG
MBRB
20150
CTG
MBRB
20200
CTG
PARAMETER
SYMBOL
Unit
MBRB
MBRB
MBRB
MBRB
MBRB
Marking code
2045CTG 2060CTG 20100CTG 20150CTG 20200CTG
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
45
31
45
60
42
60
100
70
150
105
150
200
140
200
V
V
V
A
Maximum DC blocking voltage
100
20
Maximum average forward rectified current
IF(AV)
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
20
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
IRRM
VF
150
A
A
Peak repetitive reverse surge current (Note 1)
0.5
1
Maximum instantaneous forward voltage (Note 2)
IF=10A, TJ=25°C
IF=10A, TJ=125°C
0.99
0.87
V
0.70
0.60
0.80
0.70
0.85
0.75
0.1
Maximum reverse current @ rated VR TJ=25°C
TJ=125°C
IR
mA
5
2
15
10
Voltage rate of change (Rated VR)
Typical thermal resistance
10000
dV/dt
RθJC
TJ
V/μs
°C/W
°C
1.5
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Page 1/2
http://www.thinkisemi.com.tw/
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
MBRB2045CTG thru MBRB20200CTG
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
45V=MBRB2045CTG
60V=MBRB2060CTG
100V=MBRB20100CTG
150V=MBRB20150CTG
200V=MBRB20200CTG
FIG.1 FORWARD CURRENT DERATING CURVE
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
25
20
15
10
5
150
125
100
75
8.3ms Single Half Sine Wave
50
RESISTIVE OR
INDUCTIVELOAD
25
0
0
50
60
70
80
90 100 110 120 130 140 150
1
10
100
CASE TEMPERATURE (oC)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
10
100
Pulse Width=300μs
1% Duty Cycle
45V
60V-200V
10
1
TJ=125°C
TJ=125°C
TJ=75°C
TJ=25°C
1
0.1
0.1
0.01
45V
60V
100V-200V
0.01
0.001
TJ=25°C
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2
0
20
40
60
80
100
120
140
FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5 TYPICAL JUNCTION CAPACITANCE PER
LEG
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
10000
1000
100
100
10
1
f=1.0MHz
Vsig=50mVp-p
45V
60V - 200V
0.1
0.01
0.1
1
10
100
0.1
1
10
100
T-PULSE DURATION(s)
REVERSE VOLTAGE (V)
Page 2/2
http://www.thinkisemi.com.tw/
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
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