MM60F020PC [THINKISEMI]
60.0 Ampere,200 Volt Common Cathode Fast Recovery Epitaxial Diode;型号: | MM60F020PC |
厂家: | Thinki Semiconductor Co., Ltd. |
描述: | 60.0 Ampere,200 Volt Common Cathode Fast Recovery Epitaxial Diode |
文件: | 总3页 (文件大小:1126K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MM60F020PC
MM60F020PC
Pb Free Plating Product
60.0 Ampere,200 Volt Common Cathode Fast Recovery Epitaxial Diode
TO-3PB/TO-3PN
APPLICATION
Cathode(Bottom Side Metal Heatsink)
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
Anode
PRODUCT FEATURE
Cathode
· Ultrafast Recovery Time
Internal Configuration
Anode
· Soft Recovery Characteristics
· Low Recovery Loss
Base Backside
· Low Forward Voltage
—
· High Surge Current Capability
· Low Leakage Current
GENERAL DESCRIPTION
MM60F020PC using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
200
200
30
Unit
V
VR
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
VRRM
V
TC=100°C, Per Diode
A
IF(AV)
Average Forward Current
TC=100°C, Per Package
60
A
IF(RMS)
IFSM
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
TC=100°C, Per Diode
53
A
A
300
TJ=45°C, t=10ms, 50Hz, Sine
PD
156
-40 to +150
-40 to +150
1.1
W
°C
TJ
Junction Temperature
Storage Temperature Range
Module-to-Sink
TSTG
Torque
RθJC
Weight
°C
Recommended(M3)
N·m
°C /W
g
Thermal Resistance
Junction-to-Case
0.8
6.0
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
VR=200V
Min. Typ. Max.
Unit
25
µA
--
--
--
--
--
--
--
--
--
--
--
IRM
Reverse Leakage Current
250
µA
VR=200V, TJ=125°C
IF=30A
0.86
--
1.1
0.95
--
V
V
VF
Forward Voltage
IF=30A, TJ=125°C
trr
Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs
VR=100V, IF=30A
22
26
2.3
40
4.1
ns
ns
A
trr
Reverse Recovery Time
--
diF/dt=-200A/μs, TJ=25°C
IRRM
trr
Max. Reverse Recovery Current
Reverse Recovery Time
--
VR=100V, IF=30A
--
ns
A
diF/dt=-200A/μs, TJ=125°C
IRRM
Max. Reverse Recovery Current
--
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/
MM60F020PC
60
100
80
60
40
20
0
VR=100V
TJ =125°C
50
40
30
20
10
0
IF=60A
TJ =125°C
TJ =25°C
IF=30A
IF=15A
0
0.4
0.6
0.8
1.2
0
200
400
600
800
1000
1.0
0.2
VF(V)
diF/dt(A/μs)
Fig1. Forward Voltage Drop vs Forward Current
Fig2. Reverse Recovery Time vs diF/dt
25
250
200
150
VR=100V
TJ =125°C
VR=100V
TJ =125°C
20
15
IF=60A
IF=30A
IF=15A
IF=60A
10
100
50
IF=30A
IF=15A
5
0
0
0
400
600
1000
0
200
400
600
800
1000
800
200
diF/dt(A/μs)
diF/dt(A/μs)
Fig3. Reverse Recovery Current vs diF/dt
Fig4. Reverse Recovery Charge vs diF/dt
1.2
1
10
1
0.8
0.6
0.4
0.2
Duty
0.5
0.2
0.1
0.05
Single Pulse
trr
10-1
10-2
10-3
IRRM
Qrr
0
0
25
50
100
150
10-4
10-3
10-2
10-1
1
125
75
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/3
http://www.thinkisemi.com/
MM60F020PC
IF
trr
0.25 IRRM
Qrr
IRRM
0.9 IRRM
dIF/dt
Fig7. Diode Reverse Recovery Test Circuit and Waveform
Dimensions in Millimeters
Fig8. Package Outline
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 3/3
http://www.thinkisemi.com/
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