MUR1260CTR [THINKISEMI]
12.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifiers;
| 型号： | MUR1260CTR |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 12.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifiers |
| 文件： | 总2页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR1220CTR thru MUR1260CTR
MUR1220CTR/MUR1240CTR/MUR1260CTR
Pb Free Plating Product
12.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifiers
TO-220AB(TO-220-3L)
Unit:inch(mm)
Features
※ Fast switching for high efficiency
※ Low forward voltage drop
※ High current capability
※ Low reverse leakage current
※ High surge current capability
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Application
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
.038(0.96)
.025(0.65)MAX
.019(0.50)
Mechanical Data
※ Case: Heatsink TO-220AB
.1(2.54)
.1(2.54)
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
Case
Case
Case
Case
※ Weight: 2.0 gram approximately
Doubler
Series
Negative
Positive
Tandem Polarity
Suffix "CTD"
Tandem Polarity
Suffix "CTS"
Common Cathode
Suffix "CT"
Common Anode
Suffix "CTR"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
MUR1220CT
MUR1220CTR
MUR1220CTD
MUR1220CTS
MUR1240CT
MUR1260CT
MUR1240CTR
MUR1240CTD
MUR1240CTS
MUR1260CTR
MUR1260CTD
MUR1260CTS
PARAMETER
SYMBOL
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current Tc=100°C
12.0
100
1.3
IF(AV)
IFSM
VF
A
A
V
(Total Device 2x6.0A=12.0A)
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)
Maximum Instantaneous Forward Voltage
@5.0A
0.98
1.7
(Per Diode/Per Leg)
Maximum DC Reverse Current @TJ=25°C
At Rated DC Blocking Voltage @TJ=125°C
5.0
100
μA
μA
IR
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
35
65
Trr
CJ
nS
pF
1.5
RθJC
°C/W
Operating Junction and Storage
Temperature Range
-55 to +150
TJ,TSTG
°C
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
MUR1220CTR thru MUR1260CTR
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
12
100
80
60
40
20
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
60 Hz Resistive or
Inductive load
0
50
100
150
1
10
100
CASE TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
50
MUR1220CTR
TJ=125oC
100
MUR1240CTR
MUR1260CTR
5
10
TJ=25oC
1
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
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